Strategies for ultrahigh outputs generation in triboelectric energy harvesting technologies: from fundamentals to devices

Since 2012, a triboelectric nanogenerator (TENG) has provided new possibilities to convert tiny and effective mechanical energies into electrical energies by the physical contact of two objects. Over the past few years, with the advancement of materials' synthesis and device technologies, the TENGs generated a high instantaneous output power of several mW/cm(2), required to drive various self-powered systems. However, TENGs may suffer from intrinsic and practical limitations such as air breakdown that affect the further increase of the outputs. This article provides a comprehensive review of high-output TENGs from fundamental issues through materials to devices. Finally, we show some strategies for fabricating high-output TENGs

Effect of microstructural evolution on magnetic property of Mn-implanted p-type GaN

The effect of microstructural evolution on magnetic property of Mn-implanted p-type GaN was discussed. The effect was studied using cross-sectional transmission electron microscopy (TEM). It was shown that the higher-temperature annealing reduced the ferromagnetic signal and produced antiferromagnetic Mn-nitride nanoclusters.open161

Research Update: Recent progress in the development of effective dielectrics for high-output triboelectric nanogenerator

A new energy generating device, triboelectric nanogenerator (TENG), was discovered in 2012 and thereafter, many applications such as portable power sources and self-powered, appropriate for portable electronic devices. So far, rapid development of device fabrication technologies and mechanical system designs significantly increased the instantaneous output power up to several tens of mW/cm2. This article provides a comprehensive review of effective dielectrics used so far in TENGs for further enhancement in output power, as well as the fundamental issues regarding the materials. Finally, we show some strategies for obtaining the properties that the materials should have as effective dielectrics.ope

Effect of microstructural change on magnetic property of Mn-implanted p-type GaN

The Mn ions were implanted into p-type GaN and annealed to achieve a dilute magnetic semiconductor. The ferromagnetic property was obtained and attributed to the formation of Ga-Mn magnetic phases. The ferromagnetic signal was reduced and antiferromagnetic Mn-N compounds were produced at higher temperature annealing at 900 ??C. Results showed that N vacancies play a crucial role in weakening the ferromagnetic property in the Mn-implanted GaN.open586

Fabrication of (Ga,Mn)N nanowires with room temperature ferromagnetism using nitrogen plasma

Ferromagnetic properties of (Ga,Mn)N nanowires were examined by treating with nitrogen plasma at 200 ??C. Nanowires grown by chemical vapor deposition were n-type and no secondary phases were found. The magnetic moment increased and was maintained at room temperature by this treatment. Synchrotron radiation photoemission spectroscopy revealed that Ga vacancies significantly increased, but N vacancies decreased by plasma treatment, leading to a decrease of MnGa-VN complex and the enhancement of Mn activation.open111

Enhancement of magnetic properties by nitrogen implantation to Mn-implanted p-type GaN

N and Mn ions were co-implanted into p-type GaN and subsequently annealed at 700-900degreesC. Compared with Mn-implanted sample, the (Mn+N)-implanted sample revealed a larger ferromagnetic signal. This was attributed to the increase of Ga-Mn magnetic phases. Mn-N compounds, such as Mn6N2.58 and Mn3N2, decreased and the resistivity significantly increased, meaning a reduction of N vacancies. It is suggested that enhancement in ferromagnetic properties in the (Mn+N)-implanted GaN originated from the reduction of N vacancies and the increase of Ga-Mn magnetic phases.open293

The Progress of PVDF as a Functional Material for Triboelectric Nanogenerators and Self-Powered Sensors

Ever since a new energy harvesting technology, known as a triboelectric nanogenerator (TENG), was reported in 2012, the rapid development of device fabrication techniques and mechanical system designs have considerably made the instantaneous output power increase up to several tens of mW/cm(2). With this innovative technology, a lot of researchers experimentally demonstrated that various portable/wearable devices could be operated without any external power. This article provides a comprehensive review of polyvinylidene fluoride (PVDF)-based polymers as effective dielectrics in TENGs for further increase of the output power to speed up commercialization of the TENGs, as well as the fundamental issues regarding the materials. In the end, we will also review PVDF-based sensors based on the triboelectric and piezoelectric effects of the PVDF polymers

Ferromagnetic properties of (Ga,Mn)N nanowires grown by a chemical vapor deposition method

Ferromagnetic (Ga,Mn)N nanowires were grown on sapphire substrates at 900 degrees C by a chemical vapor deposition. Synchrotron radiation photoemission spectroscopy revealed that no secondary phases were found in the grown nanowire, meaning the dissolution of Mn atoms to form a solid solution in GaN nanowire. Fermi level was apart by 3.0,eV in the GaN nanowire (n-type), and it shifted toward the valance band maximum with ammonia flow rate. The Ga-to-N ratio decreased with the increase of ammonia flow rate, leading to the increase of Ga vacancies. From this, it is suggested that both increases in magnetic moment and Curie temperature with ammonia flow rate originated from the solid solution of Mn and Ga vacancies.open4

Microstructural, optical, and magnetic properties of Mn-implanted p-type GaN

The microstructural, optical and magnetic properties of Mn-implanted p-type GaN were investigated. Dilute magnetic semiconductor was achieved by implanting Mn ions into p-type GaN and subsequently annealing. The Ga-Mn magnetic phases contributing to the ferromagnetic property were produced after annealing Mn-implanted p-type GaN below 800??C.open151

Correlation between thermal annealing temperature and Joule-heating based insulator-metal transition in VO2 nanobeams

Rapid thermal annealing of VO2 nanobeams in an ambient argon environment has been carried out at various temperatures after device fabrication. Our analysis revealed that increasing the annealing temperature from 200??C to 400??C results in the reduction of both ohmic and nanobeam resistances with an appreciable decrease in joule-heating based transition voltage and transition temperature, while samples annealed at 500??C exhibited a conducting rutile-phase like characteristics at room temperature. In addition, these variation trends were explored using a physical model and the results were found to be in agreement with the observed results, thus verifying the model.open2