44 research outputs found
Transistor Switches using Active Piezoelectric Gate Barriers
This work explores the consequences of introducing a piezoelectric gate
barrier in a normal field-effect transistor. Because of the positive feedback
of strain and piezoelectric charge, internal charge amplification occurs in
such an electromechanical capacitor resulting in a negative capacitance. The
first consequence of this amplification is a boost in the on-current of the
transistor. As a second consequence, employing the Lagrangian method, we find
that by using the negative capacitance of a highly compliant piezoelectric
barrier, one can potentially reduce the subthreshold slope of a transistor
below the room temperature Boltzmann limit of 60 mV/decade. However, this may
come at the cost of hysteretic behavior in the transfer characteristics.Comment: 12 pages, 11 figures, 1 tabl
A Two-year Outcome of Various Techniques of Discectomy On Complications: A Multicentric Retrospective Study
Objective Various techniques of performing lumbar discectomy are prevalent, each having its rationale and claimed benefits. The authors ventured to assess the total complication rate of lumbar discectomy as well as the complication rates of individual complications, namely CSF leaks, superficial wound infections, deep wound infections, recurrence rates, re-operation rates, and wrong level surgery. Methods This was a retrospective study of patients operated using open discectomy (OD), microdiscectomy (MD), microendoscopic discectomy (MED), interlaminar endoscopic lumbar discectomy (IELD), transforaminal endoscopic lumbar discectomy (TELD), and Destandau techniques (DT) with a minimum follow-up of 2 years. The inclusion criteria were age>15 years, failed conservative treatment for 4-6 weeks, and the involvement of a single lumbar level. Results There is no statistically significant association between surgical technique and complications. The total complication rate was 12.89% in 946 operated cases. The most common complication was recurrence (5.81%), followed by re-operation (3.69%), CSF leak (1.90%), wrong level surgery (0.63%), superficial infection (0.52%) and deep infection (0.31%). There were minor differences in the incidence of complications between techniques. Conclusion This is the first study to compare the complication rates of all the prevalent discectomy techniques across the globe in 946 patients. Although there were minor differences in incidences of complications between individual techniques, there was no statistical significance. The various rates of individual complications provide a reference value for future studies related to complications following discectomy
On a simple scheme for computing the electronic energy levels of a finite system from those of the corresponding infinite system
Airy function based model for 2-DEG charge and surface potential in N-polar Gallium Nitride heterostructures
<div>A systematic, analytical method to obtain the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. This method also provides the wave functions, sub-band energies, and band diagram. The model accounts for the greater leakage of the wave functions into the spacer and barrier layers in the N-polar structure as compared to the Ga-polar structure. The framework is based on the solution of Schrodinger-Poisson equations for an approximately triangular well potential with finite confinement, achieved using first-order perturbation theory. No fitting parameters are used. Results obtained using our model are in good agreement with numerical results (obtained using the finite difference method) for a wide range of bias conditions.</div></jats:p
