1,773 research outputs found

    Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

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    We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm^2/V/s at room temperature to 49 000 cm^2/V/s at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices.Comment: 5 pages, 3 figure

    24 \textmu m length spin relaxation length in boron nitride encapsulated bilayer graphene

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    We have performed spin and charge transport measurements in dual gated high mobility bilayer graphene encapsulated in hexagonal boron nitride. Our results show spin relaxation lengths λs\lambda_s up to 13~\textmu m at room temperature with relaxation times τs\tau_s of 2.5~ns. At 4~K, the diffusion coefficient rises up to 0.52~m2^2/s, a value 5 times higher than the best achieved for graphene spin valves up to date. As a consequence, λs\lambda_s rises up to 24~\textmu m with τs\tau_s as high as 2.9~ns. We characterized 3 different samples and observed that the spin relaxation times increase with the device length. We explain our results using a model that accounts for the spin relaxation induced by the non-encapsulated outer regions.Comment: 5 pages and 4 figure

    Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field

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    We experimentally study the electronic spin transport in hBN encapsulated single layer graphene nonlocal spin valves. The use of top and bottom gates allows us to control the carrier density and the electric field independently. The spin relaxation times in our devices range up to 2 ns with spin relaxation lengths exceeding 12 ÎŒ\mum even at room temperature. We obtain that the ratio of the spin relaxation time for spins pointing out-of-plane to spins in-plane is τ⊄/Ï„âˆŁâˆŁâ‰ˆ\tau_{\bot} / \tau_{||} \approx 0.75 for zero applied perpendicular electric field. By tuning the electric field this anisotropy changes to ≈\approx0.65 at 0.7 V/nm, in agreement with an electric field tunable in-plane Rashba spin-orbit coupling

    Linear scaling between momentum and spin scattering in graphene

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    Spin transport in graphene carries the potential of a long spin diffusion length at room temperature. However, extrinsic relaxation processes limit the current experimental values to 1-2 um. We present Hanle spin precession measurements in gated lateral spin valve devices in the low to high (up to 10^13 cm^-2) carrier density range of graphene. A linear scaling between the spin diffusion length and the diffusion coefficient is observed. We measure nearly identical spin- and charge diffusion coefficients indicating that electron-electron interactions are relatively weak and transport is limited by impurity potential scattering. When extrapolated to the maximum carrier mobilities of 2x10^5 cm^2/Vs, our results predict that a considerable increase in the spin diffusion length should be possible

    Spin transport in graphene nanostructures

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    Graphene is an interesting material for spintronics, showing long spin relaxation lengths even at room temperature. For future spintronic devices it is important to understand the behavior of the spins and the limitations for spin transport in structures where the dimensions are smaller than the spin relaxation length. However, the study of spin injection and transport in graphene nanostructures is highly unexplored. Here we study the spin injection and relaxation in nanostructured graphene with dimensions smaller than the spin relaxation length. For graphene nanoislands, where the edge length to area ratio is much higher than for standard devices, we show that enhanced spin-flip processes at the edges do not seem to play a major role in the spin relaxation. On the other hand, contact induced spin relaxation has a much more dramatic effect for these low dimensional structures. By studying the nonlocal spin transport through a graphene quantum dot we observe that the obtained values for spin relaxation are dominated by the connecting graphene islands and not by the quantum dot itself. Using a simple model we argue that future nonlocal Hanle precession measurements can obtain a more significant value for the spin relaxation time for the quantum dot by using high spin polarization contacts in combination with low tunneling rates

    Large yield production of high mobility freely suspended graphene electronic devices on a PMGI based organic polymer

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    The recent observation of fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron-electron interaction dynamics. However, the technique used currently for the fabrication of such high mobility devices has several drawbacks. The most important is that the contact materials available for electronic devices are limited to only a few metals (Au, Pd, Pt, Cr and Nb) since only those are not attacked by the reactive acid (BHF) etching fabrication step. Here we show a new technique which leads to mechanically stable suspended high mobility graphene devices which is compatible with almost any type of contact material. The graphene devices prepared on a polydimethylglutarimide based organic resist show mobilities as high as 600.000 cm^2/Vs at an electron carrier density n = 5.0 10^9 cm^-2 at 77K. This technique paves the way towards complex suspended graphene based spintronic, superconducting and other types of devices.Comment: 14 pages, 4 figure

    Temperature dependent transport characteristics of graphene/n-Si diodes

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    Realizing an optimal Schottky interface of graphene on Si is challenging, as the electrical transport strongly depends on the graphene quality and the fabrication processes. Such interfaces are of increasing research interest for integration in diverse electronic devices as they are thermally and chemically stable in all environments, unlike standard metal/semiconductor interfaces. We fabricate such interfaces with n-type Si at ambient conditions and find their electrical characteristics to be highly rectifying, with minimal reverse leakage current (<<10−10^{-10} A) and rectification of more than 10610^6. We extract Schottky barrier height of 0.69 eV for the exfoliated graphene and 0.83 eV for the CVD graphene devices at room temperature. The temperature dependent electrical characteristics suggest the influence of inhomogeneities at the graphene/n-Si interface. A quantitative analysis of the inhomogeneity in Schottky barrier heights is presented using the potential fluctuation model proposed by Werner and G\"{u}ttler.Comment: 5 pages, 5 figure

    Spin transport in high quality suspended graphene devices

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    We measure spin transport in high mobility suspended graphene (\mu ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (\tau_s ~ 150 ps) and spin relaxation length (\lambda_s=4.7 \mu m) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.Comment: 22 pages, 6 figures; Nano Letters, Article ASAP (2012) (http://pubs.acs.org/doi/abs/10.1021/nl301050a

    ThomX Technical Design Report

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    Trees and water: smallholder agroforestry on irrigated lands in Northern India

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    Trees / Populus deltoids / Agroforestry / Afforestation / Reforestation / Models / Water use / Water balance / Evapotranspiration / Precipitation / Remote sensing / Irrigation requirements / India
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