5 research outputs found
Highly Controllable and Efficient Synthesis of Mixed-Halide CsPbX<sub>3</sub> (X = Cl, Br, I) Perovskite QDs toward the Tunability of Entire Visible Light
CsPbX<sub>3</sub> (X = Cl, Br, I) perovskite quantum dots (PQDs) have been intensively
investigated on photoelectric devices due to their superior optical
properties. To date, the stability of CsPbX<sub>3</sub> PQDs is still
an open challenge. The previous mixed-halide CsPbX<sub>3</sub> PQDs
were generally obtained via the anion-exchange method at 40 °C.
Here, the single- and mixed-halide CsPbX<sub>3</sub> PQDs are synthesized
at high temperature via the hot injection technique. The surface ligands
could thus be strongly coordinated onto the surface of the PQDs, which
dramatically improve the optical properties of the PQDs. The resulting
CsPbX<sub>3</sub> PQDs have high quantum yield (QY, 40–95%),
narrow full width at half-maximum (FWHM) (the narrowest FWHM <10
nm), tunable band gap (408–694 nm), and highly strong photostability.
The variation of their emission peaks upon anion atoms is well-supported
by the theoretical band gaps calculated by the density functional
theory calculations with the alloy formula correction. Hence, these
PQDs show great potential as good candidates for photoelectric devices
Electronic Level Alignment at an Indium Tin Oxide/PbI<sub>2</sub> Interface and Its Applications for Organic Electronic Devices
The
electronic level alignment at the indium tin oxide (ITO)/PbI<sub>2</sub> interface is investigated by an ultraviolet photoelectron spectroscopy.
An n-type conductivity property is found for PbI<sub>2</sub> as well
as a downward shift energy level at the ITO/PbI<sub>2</sub> interface.
These indicate that PbI<sub>2</sub> can be used as an anode buffer
layer for organic electronic devices. The power conversion efficiency
of the organic solar cell based on tetraphenyldibenzoperiflanthene/C<sub>70</sub> planar heterojunction is dramatically increased from 1.05
to 3.82%. Meanwhile, the thermally activated delayed fluorescence
organic light-emitting diode based on 4,4′,4″-triÂ(<i>N</i>-carbazolyl)Âtriphenylamine–((1,3,5-triazine-2,4,6-triyl)ÂtrisÂ(benzene-3,1-diyl))ÂtrisÂ(diphenylphosphine
oxide) shows a significantly reduced turn-on voltage and enhanced
power efficiency from 6.26 to 18.60 lm/W. The improved performance
is attributed to the high hole injection/extraction efficiency at
the ITO/PbI<sub>2</sub> interface. Besides, the near-infrared (NIR)
absorption of lead phthalocyanine (PbPc)-based NIR organic photodetector
(NIR-OPD) is dramatically increased, indicating that the PbI<sub>2</sub> layer can also be used as a template layer for the growth of the
triclinic phase of PbPc. As a result, the optimized device shows an
external quantum efficiency of 26.7% and a detectivity of 9.96 Ă—
10<sup>11</sup> jones at 900 nm, which are among the highest ones
reported for organic NIR-OPDs
Surface Plasmon Enhanced Organic Solar Cells with a MoO<sub>3</sub> Buffer Layer
High-efficiency surface plasmon enhanced
1,1-bis-(4-bisÂ(4-methyl-phenyl)-amino-phenyl)-cyclohexane:C70
small molecular bulk heterojunction organic solar cells with a MoO<sub>3</sub> anode buffer layer have been demonstrated. The optimized
device based on thermal evaporated Ag nanoparticles (NPs) shows a
power conversion efficiency of 5.42%, which is 17% higher than the
reference device. The improvement is attributed to both the enhanced
conductivity and increased absorption due to the near-field enhancement
of the localized surface plasmon resonance of Ag NPs
High-Performance Organic Small-Molecule Panchromatic Photodetectors
High-performance
panchromatic organic photodetectors (OPDs) containing
small molecules lead phthalocyanine (PbPc) and C<sub>70</sub> fullerene
as donor and acceptor, respectively, were demonstrated. The OPDs had
either a PbPc/C<sub>70</sub> planar heterojunction (PHJ) or a PbPc/PbPc:C<sub>70</sub>/C<sub>70</sub> hybrid planar-mixed molecular heterojunction
(PM-HJ) structure. Both the PHJ and the PM-HJ devices showed a broad-band
response that covered wavelengths from 300 to 1100 nm. An external
quantum efficiency (EQE) higher than 10% and detectivity on the order
of 10<sup>12</sup> Jones were obtained in the wavelength region from
400 to 900 nm for the PHJ device. The EQE in the near-infrared region
was enhanced by using the PM-HJ device structure, and a maximum EQE
of 30.2% at 890 nm was observed for the optimized device with a 5%
PbPc-doped C<sub>70</sub> layer. Such an EQE is the highest at this
wavelength of reported OPDs. The detectivity of the PM-HJ devices
was also higher than that of the PHJ one, which is attributed to the
increased efficiency of exciton dissociation in bulk heterojunction
structure, increased absorption efficiency caused by formation of
triclinic PbPc in the PbPc:C<sub>70</sub> mixed film when it was deposited
on a pristine PbPc layer, and high hole mobility of the PbPc-doped
C<sub>70</sub> layer
Efficient Triplet Application in Exciplex Delayed-Fluorescence OLEDs Using a Reverse Intersystem Crossing Mechanism Based on a Δ<i>E</i><sub>S–T</sub> of around Zero
We demonstrate highly efficient exciplex
delayed-fluorescence organic light-emitting diodes (OLEDs) in which
4,4′,4″-trisÂ[3-methylphenylÂ(phenyl)Âaminotriphenylamine
(m-MTDATA) and 4,7-diphenyl-1,10-phenanthroline (Bphen) were selected
as donor and acceptor components, respectively. Our m-MTDATA:Bphen
exciplex electroluminescence (EL) mechanism is based on reverse intersystem
crossing (RISC) from the triplet to singlet excited states. As a result,
an external quantum efficiency (EQE) of 7.79% at 10 mA/cm<sup>2</sup> was observed, which increases by 3.2 and 1.5 times over that reported
in <i>Nat. Photonics</i> <b>2012</b>, <i>6</i>, 253 and <i>Appl. Phys. Lett.</i> <b>2012</b>, <i>101</i>, 023306, respectively. The high EQE would be attributed
to a very easy RISC process because the energy difference between
the singlet and triplet excited states is almost around zero. The
verdict was proven by photoluminescence (PL) rate analysis at different
temperatures and time-resolved spectral analysis. Besides, the study
of the transient PL process indicates that the presence of an unbalanced
charge in exciplex EL devices is responsible for the low EQE and high-efficiency
roll-off. When the exciplex devices were placed in a 100 mT magnetic
field, the permanently positive magnetoelectroluminescence and magnetoconductivity
were observed. The magnetic properties confirm that the efficient
exciplex EL only originates from delayed fluorescence via RISC processes
but is not related to the triplet–triplet annihilation process