2 research outputs found
Flexible NiO–Graphene–Carbon Fiber Mats Containing Multifunctional Graphene for High Stability and High Specific Capacity Lithium-Ion Storage
An
electrode’s conductivity, ion diffusion rate, and flexibility
are critical factors in determining its performance in a lithium-ion
battery. In this study, NiO–carbon fibers were modified with
multifunctional graphene sheets, resulting in flexible mats. These
mats displayed high conductivities, and the transformation of active
NiO to inert Ni<sup>0</sup> was effectively prevented at relatively
low annealing temperatures in the presence of graphene. The mats were
also highly flexible and contained large gaps for the rapid diffusion
of ions, because of the addition of graphene sheets. The flexible
NiO–graphene–carbon fiber mats achieved a reversible
capacity of 750 mA h/g after 350 cycles at a current density of 500
mA/g as the binder-free anodes of lithium-ion batteries. The mats’
rate capacities were also higher than those of either the NiO–carbon
fibers or the graphene–carbon fibers. This work should provide
a new route toward improving the mechanical properties, conductivities,
and stabilities of mats using multifunctional graphene
Enhancing Optical Confinement of InGaN Thin-Film Microdisk Lasers with Hybrid Omnidirectional Reflectors
The conventional GaN microdisk laser adopts an undercut
structure
for the optical confinement, which provides poor overlap between the
whispering gallery modes and the multiquantum well gain region. The
thin-film microdisk structure was proposed to overcome this shortcoming,
but the absorptive nature of the metallic bonding layer with mirror
compromises optical confinement. In this work, an SiO2/TiO2 distributed Bragg reflector is integrated with the metallic
mirror to form an omnidirectional reflector that provides high optical
reflectance across a wide range of incidence angles to promote optical
confinement in the microdisk. Optical-pumped lasing with an average
lasing threshold power density of 46.5 W/cm2 and Q factors
of 18200 (near threshold) is achieved. The narrowest lasing line width
of ∼0.02 nm is obtained at the average excitation power density
of 48.02 W/cm2, representing a major advancement in the
GaN microdisk laser technology