604 research outputs found
Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions
We report on systematic ab-initio investigations of Co and Cr interlayers
embedded in Fe(001)/MgO/Fe(001) magnetic tunnel junctions, focusing on the
changes of the electronic structure and the transport properties with
interlayer thickness. The results of spin-dependent ballistic transport
calculations reveal options to specifically manipulate the tunnel
magnetoresistance ratio. The resistance area products and the tunnel
magnetoresistance ratios show a monotonous trend with distinct oscillations as
a function of the Cr thickness. These modulations are directly addressed and
interpreted by means of magnetic structures in the Cr films and by complex band
structure effects. The characteristics for embedded Co interlayers are
considerably influenced by interface resonances which are analyzed by the local
electronic structure
Nonlinear electronic conductivity in lithium niobate domain walls
Applying ferroelectric materials for nanoelectronic circuits opens, next to exploiting completely new functionalities, the possibility of improving resource efficiency in electronic circuits. Due to its defined and easy-to-manipulate domain structure, lithium niobate (LiNbO3, LNO) is a promising candidate to realize such circuits. As a prerequisite, a detailed understanding of the underlying conduction mechanisms is required for a future large scale application.
The main field of attention of this thesis is the domain wall conductivity in lithium niobate, investigated with temperature-dependent dc conductivity measurements as well as higher-harmonic current analysis under alternating-voltage excitation. Thereby the parameters of the electric field are of special interest, comprising the static dc field and both the amplitude and the frequency of the ac excitation voltage. Prior to the analysis of the experimental results, the setups are characterized in depth and a theoretical framework to calculate higher-harmonic current contributions generated by non-ohmic conduction models is derived. In case of high static offset voltages, an ohmic-like conductance is observed, which is ascribed to the intrinsic conductivity of the domain wall. For lower static offset fields, a diode-like current-voltage characteristic is found, originating from the junction of the domain wall and the metallic contact electrode. The results are compared to measurements at an industrial Schottky diode taken under the same conditions. Based on the theory of metal-semiconductor junctions, the effective donor density within the conducting domain wall is estimated to be of the order of 1019/cm3, which agrees well with theoretical calculations in the literature.
An equivalent circuit based on two diodes and two resistors is proposed to model the observed nonohmic conductance. For all experimental techniques, a good agreement between this model and the experimental data is observed, proving especially the non-ohmic conductivity to be of Schottky-type
Annual Report 2021 - Institute of Ion Beam Physics and Materials Research
The year 2021 was still overshadowed by waves of the COVID-19 pandemic, although the arrival of efficient vaccinations together with the experience of the preceding year gave us a certain routine in handling the situation. By now the execution of meetings in an online mode using zoom and similar video conference systems has been recognized as actually being useful in certain situations, e.g. instead of flying across Europe to attend a three-hours meeting, but also to be able to attend seminars of distinguished scientists which otherwise would not be easily accessible.
The scientific productivity of the institute has remained on a very high level, counting 190 publications with an unprecedented average impact factor of 8.0. Six outstanding and representative publications are reprinted in this Annual Report. 16 new third-party projects were granted, among them 7 DFG projects, but very remarkably also an EU funded project on nonlinear magnons for reservoir computing with industrial participation of Infineon Technologies Dresden and GlobalFoundries Dresden coordinated by Kathrin Schultheiß of our Institute.
The scientific success was also reflected in two HZDR prizes awarded to the members of the Institute: Dr. Katrin Schultheiß received the HZDR Forschungspreis for her work on “Nonlinear magnonics as basis for a spin based neuromorphic computing architecture”, and Dr. Toni Hache was awarded the Doktorandenpreis for his thesis entitled “Frequency control of auto-oscillations of the magnetization in spin Hall nano-oscillators”. Our highly successful theoretician Dr. Arkady Krasheninnikov was quoted as Highly Cited Researcher 2021 by Clarivate.
The new 1-MV facility for accelerator mass spectrometry (AMS) has been ordered from NEC (National Electrostatics Corporation). Design of a dedicated building to house the accelerator, the SIMS and including additional chemistry laboratories for enhanced sample preparation capabilities has started and construction is planned to be finished by mid 2023, when the majority of the AMS components are scheduled for delivery.
In the course of developing a strategy for the HZDR - HZDR 2030+ Moving Research to the NEXT Level for the NEXT Gens - six research focus areas for our institute were identified.
Concerning personalia, it should be mentioned that the long-time head of the spectroscopy department PD Dr. Harald Schneider went into retirement. His successor is Dr. Stephan Winnerl, who has been a key scientist in this department already for two decades. In addition, PD Dr. Sebastian Fähler was hired in the magnetism department who transferred several third-party projects with the associated PhD students to the Institute and strengthens our ties to the High Magnetic Field Laboratory, but also to the Institute of Fluid Dynamics.
Finally, we would like to cordially thank all partners, friends, and organizations who supported our progress in 2021. First and foremost we thank the Executive Board of the Helmholtz-Zentrum Dresden-Rossendorf, the Minister of Science and Arts of the Free State of Saxony, and the Ministers of Education and Research, and of Economic Affairs and Climate Action of the Federal Government of Germany. Many partners from universities, industry and research institutes all around the world contributed essentially, and play a crucial role for the further development of the institute. Last but not least, the directors would like to thank all members of our institute for their efforts in these very special times and excellent contributions in 2021
Evaluation of conduction eigenchannels of an adatom probed by an STM tip
Ballistic conductance through a single atom adsorbed on a metallic surface
and probed by a scanning tunneling microscope (STM) tip can be decomposed into
eigenchannel contributions, which can be potentially obtained from shot noise
measurements. Our density functional theory calculations provide evidence that
transmission probabilities of these eigenchannels encode information on the
modifications of the adatom's local density of states caused by its interaction
with the STM tip. In the case of open shell atoms, this can be revealed in
nonmonotonic behavior of the eigenchannel's transmissions as a function of the
tip-adatom separation.Comment: 4.5 pages, 5 figures, REVTe
Screened Korringa-Kohn-Rostoker-Methode für Vielfachschichten
Im Rahmen der vorliegenden Arbeit wird eine Tight-Binding-Formulierung der Korringa-Kohn-Rostoker-Greenschen-Funktionsmethode vorgestellt. Dabei werden mittels eines geeignet gewählten Referenzsystems abgeschirmte Strukturkonstanten konstruiert. Es werden die Vorteile und Grenzen dieser Transformation des Formalismus diskutiert. Es wird gezeigt, daß der numerische Aufwand zur erechnung der Elektronenstruktur von Systemen mit langgestreckter Elementarzelle linear mit der Systemgröße wächst. Damit ist eine Behandlung von Systemen mit 500 und mehr Atomen pro Elementarzelle möglich. Anhand von umfangreichen Testrechnungen kann demonstriert werden, daß das neue Verfahren bezüglich seiner Genauigkeit mit dem traditionellen KKR-Verfahren vergleichbar ist. Es werden Anwendungen zur Berechnung der Elektronenstruktur sowie zur Zwischenlagenaustauschkopplung von Co/Cu(100)-Vielfachschichten vorgestellt.A newly developed ab initio tight-binding-formulation of the Korringa-Kohn-Rostoker-Green's function method for layered systems is presented. Screened structure constants are calculated by means of a repulsive reference system. Advantages and limits of this transformation of the formalism are discussed in detail. The numerical effort for self consistent electronic structure calculations of systems with a large prolonged supercell scales linearly with the system size. Systems with up to 500 atoms per unit cell can be treated easily. The accuracy of the new method is of the same order as the traditional KKR method. Applications to electronic structure calculations and magnetic interlayer exchange coupling in Co/Cu(100) multilayers are presented
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