Design and Synthesis of Palladium/Black Phosphorus–Graphene Hybrids as High-Performance Catalysts for Ethanol Electrooxidation in Alkaline Media

In this study, a series of Pd-supported black phosphorus–graphene (Pd/BP-G) catalysts are prepared to explore their electrocatalytic performances in the electrooxidation of ethanol in alkaline media. The characterization results show that BP is combined with activated graphene to form a P–C bond and a P–O–C bond heterojunction. Pd nanoparticles equally anchor on the BP-G hybrid, and Pd/BP-G exhibited enhanced electrocatalytic activity for the ethanol oxidation reaction in alkaline media. The electrochemically active surface area and mass activity for the Pd/BP-G catalyst reached 210.4 m2·gPd–1 and 3960.0 mA·mgPd–1, which are 9.54 and 5.86 times higher than those of commercial Pd/C, respectively. Further studies show that Pd/BP-G catalysts have reliable stabilities and faster reaction kinetics. These results indicate that the prepared Pd/BP-G catalysts have great application potentials in direct ethanol fuel cells

Controllable Synthesis of Transferable Ultrathin Bi₂Ge(Si)O₅ Dielectric Alloys with Composition-Tunable High‑κ Properties

Two-dimensional (2D) alloys hold great promise to serve as important components of 2D transistors, since their properties allow continuous regulation by varying their compositions. However, previous studies are mainly limited to the metallic/semiconducting ones as contact/channel materials, but very few are related to the insulating dielectrics. Here, we use a facile one-step chemical vapor deposition (CVD) method to synthesize ultrathin Bi2SixGe1–xO5 dielectric alloys, whose composition is tunable over the full range of x just by changing the relative ratios of the GeO2/SiO2 precursors. Moreover, their dielectric properties are highly composition-tunable, showing a record-high dielectric constant of >40 among CVD-grown 2D insulators. The vertically grown nature of Bi2GeO5 and Bi2SixGe1–xO5 enables polymer-free transfer and subsequent clean van der Waals integration as the high-κ encapsulation layer to enhance the mobility of 2D semiconductors. Besides, the MoS2 transistors using Bi2SixGe1–xO5 alloy as gate dielectrics exhibit a large Ion/Ioff (>108), ideal subthreshold swing of ∼61 mV/decade, and a small gate hysteresis (∼5 mV). Our work not only gives very few examples on controlled CVD growth of insulating dielectric alloys but also expands the family of 2D single-crystalline high-κ dielectrics