123 research outputs found

    Predictors of probiotic supplement usage between 7 and 18 months.

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    †<p>Reference group.</p>*<p><i>P</i><0.05.</p>**<p><i>P</i><0.01.</p>***<p><i>P</i><0.001.</p

    Adjusted odds ratios and confidence intervals of probiotic supplement use.

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    †<p>Reference group.</p>*<p><i>P</i><0.05.</p>**<p><i>P</i><0.01.</p>***<p><i>P</i><0.001.</p

    Mean durations of floods in Taiwan estimated by month and frequency during 1998–2008.

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    <p>Mean durations of floods in Taiwan estimated by month and frequency during 1998–2008.</p

    Monthly average incidence rates of eye, skin and GI diseases associated with monthly weather status from 1998 to 2008 in Taiwan.

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    <p>Monthly average incidence rates of eye, skin and GI diseases associated with monthly weather status from 1998 to 2008 in Taiwan.</p

    Summarized RT-PCR validation results of the 17 genes in human leukocytes.

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    *<p>Comparison of the gene expression levels of HD patients (n = 16) with controls (n = 20).</p

    Clinical characteristics and gene expression levels of the symptomatic HD patients, PreHD carriers and the controls.

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    <p>HD: Huntington's Disease. SSRI: selective serotonin uptake inhibitor. UHDRS: The Unified Huntington's Disease Rating Scale. Scale ranges (normal to most severe) include motor score (0 to 124), independence score (100 to 10), and functional capacity (13 to 0).</p>‡<p>: <i>P</i> value of ANCOVA with adjustment of age and gender.</p>*<p>: Statistically significant in comparison with controls, <i>P</i><0.05, ANCOVA with <i>post-hoc</i> Bonferroni test;</p>**<p>: Statistically significant in comparison with PreHD and controls respectively, <i>P</i><0.05, ANCOVA with <i>post-hoc</i> Bonferroni test;</p>#<p>: Statistically significant in comparison with HD patients and controls respectively, <i>P</i><0.05, ANOVA.</p

    Thickness-Dependent Ferroelectricity in Freestanding Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Membranes

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    In the recent years, ferroelectricity in Hf0.5Zr0.5O2 (HZO) has been intensively studied due to its compatibility with silicon-based ferroelectric applications, high dielectric constant, and maintenance of robust ferroelectricity even at ultrathin thickness (<10 nm). This makes it a potential alternative material in ferroelectric field-effect transistors, complementary metal-oxide-semiconductor (CMOS) gate layers, and other applications. Previous studies have explained that ferroelectricity is attributed to the transformation from a tetragonal (t-phase) to orthorhombic (o-phase) structure during cooling. Conventional HZO thin films that are directly grown on silicon are polycrystalline, which reduces the polarization efficiency in CMOS devices. To address this problem, there is a demand for epitaxial freestanding HZO (FS-HZO) thin films that can be transferred without substrate constraints. In this study, we conducted comprehensive analysis of FS-HZO membranes with varying thicknesses to investigate the relationship between ferroelectric properties and thin film thickness. With monoclinic phase (m-phase) substitution, we notice a reduced o-phase fraction and gradual suppression of ferroelectricity when the thickness is over 20 nm. Owing to the large structure anisotropy, we further observed an increase in X-ray linear dichroism with increasing thickness. In addition, the dielectric constant of FS-HZO decreases by half compared to as-grown HZO due to increased leakage current from the cracks led by the freestanding process. This study presents an important method to combine oxides with silicon-based semiconductors and detailed information on various thicknesses of FS-HZO in aspects of structure and ferroelectricity, providing a potential solution to compatibility concerns in the context of next-generation nanoelectronics
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