Supplement 1: Multifocal optical nanoscopy for big data recording at 30 TB capacity and gigabits/second data rate

Originally published in Optica on 20 June 2015 (optica-2-6-567

Supplementary document for Resonant nonlinear nanostructured grating in unstructured lithium niobate on insulator platform - 6583161.pdf

CONTEXT S1: Band structures and electric field distribution at kx=0 S2: The refractive index of SiO2 gratings S3: The fabrication processes of LNOI device S4: Measurement of Transmission Spectra S5: Nonlinear response of LNOI nanostructured device

Supplementary document for Resonant nonlinear nanostructured grating in unstructured lithium niobate on insulator platform - 6591233.pdf

S1: Band structures and electric field distribution at kx=0 S2: The refractive index of SiO2 gratings S3: The fabrication processes of LNOI device S4: Measurement of Transmission Spectra S5: Nonlinear response of LNOI nanostructured device S6: Comp

Supplementary document for Resonant nonlinear nanostructured grating in unstructured lithium niobate on insulator platform - 6513750.pdf

CONTEXT S1: Band structures and electric field distribution at kx=0 S2: The refractive index of SiO2 gratings S3: The fabrication processes of LNOI device S4: Measurement of Transmission Spectra S5: Nonlinear response of LNOI nanostructured device

Ultra-Broadband Directional Scattering by Colloidally Lithographed High-Index Mie Resonant Oligomers and Their Energy-Harvesting Applications

Emerging high-index all-dielectric nanostructures, capable of manipulating light on the subwavelength scale, empower designing and implementing novel antireflection and light-trapping layers in many photonic and optoelectronic devices. However, their performance and practicality are compromised by relatively narrow bandwidths and highly sophisticated fabrications. In this paper, we demonstrate an ultra-broadband (300–1200 nm) directional light scattering strategy using high-index surface silicon oligomer resonators fabricated by a facile, scalable, and low-cost colloidal lithography technique. The exceptional broadband forward scattering stems from a combined effect of strongly intercoupled Mie resonances within the oligomers composed of randomly positioned nanodisks in the visible region and a strong electric mode coupling between the oligomers and the high-index substrate in the red-to-near-infrared region. By implementing this efficient approach in silicon solar cells, the integrated optical reflection loss across the wavelength range 300–1200 nm can be as low as 7%. Consequently, the short-circuit current density determined from the external quantum efficiency of solar cells can be increased to 35.1 from 25.1 mA/cm², representing an enhancement of 40%, with a demonstrated energy conversion efficiency exceeding 15.0%. The insights in this paper hold great potentials for new classes of light management and steering photonic devices with drastically improved practicality

Nanophotonic inspection of deep-subwavelength integrated optoelectronic chips

Artificial nanostructures with ultrafine and deep-subwavelength feature sizes have emerged as a paradigm-shifting platform to advanced light field management, becoming a key building block for high-performance integrated optoelectronics and flat optics. However, direct optical inspection of such integrated chips with densely packed complex and small features remains a missing metrology gap that hinders quick feedback between design and fabrications. Here, we demonstrate that photothermal nonlinear scattering microscopy can be utilized for direct imaging and resolving of integrated optoelectronic chips beyond the diffraction limit. We reveal that the inherent coupling among deep-subwavelength nanostructures supporting leaky resonances allows for the pronounced heating effect to access reversible nonlinear modulations of the confocal reflection intensity, leading to optical resolving power down to 80 nm (~lambda/7). The versatility of this approach has been exemplified by direct imaging of silicon grating couplers and metalens with a minimum critical dimension of 100 nm, as well as central processing unit (CPU) chip with 45 nm technology, unfolding the long-sought possibility of in-situ, non-destructive, high-throughput optical inspection of integrated optoelectronic chips and nanophotonic chips

Diatomic Metasurface for Vectorial Holography

The emerging metasurfaces with the exceptional capability of manipulating an arbitrary wavefront have revived the holography with unprecedented prospects. However, most of the reported metaholograms suffer from limited polarization controls for a restrained bandwidth in addition to their complicated meta-atom designs with spatially variant dimensions. Here, we demonstrate a new concept of vectorial holography based on diatomic metasurfaces consisting of metamolecules formed by two orthogonal meta-atoms. On the basis of a simply linear relationship between phase and polarization modulations with displacements and orientations of identical meta-atoms, active diffraction of multiple polarization states and reconstruction of holographic images are simultaneously achieved, which is robust against both incident angles and wavelengths. Leveraging this appealing feature, broadband vectorial holographic images with spatially varying polarization states and dual-way polarization switching functionalities have been demonstrated, suggesting a new route to achromatic diffractive elements, polarization optics, and ultrasecure anticounterfeiting