Determination of Density of Trap States at Y\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e-Stabilized ZrO\u3csub\u3e2\u3c/sub\u3e/Si Interface of Yba\u3csub\u3e2\u3c/sub\u3eCu\u3csub\u3e3\u3c/sub\u3eO\u3csub\u3e7-δ\u3c/sub\u3e/Y\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e-Stabilized ZrO\u3csub\u3e2\u3c/sub\u3e/Si Capacitors

Yba2Cu3O7-δ/yttria‐stabilized zirconia (YSZ)/silicon superconductor‐insulator‐semiconductor capacitors are characterized with current‐voltage and capacitance‐voltage (C‐V) measurements at different temperatures between 223 and 80 K. As a result of ‘‘freezing’’ of mobile ions in YSZ, effects of trapped charge at the YSZ/Si interface dominate the device electrical properties at superconducting temperatures. Density of interface states and its temperature dependence are determined using a modified high frequency C‐V method, in which the temperature dependences of band gap, Fermi level, and active dopant and intrinsic carrier concentrations are considered. At superconducting temperatures, e.g., 80 K, the interface state density within the band gap is reduced to lower than 1×1011 cm−2 eV at midgap. The low interface state density at the YSZ/Si interface is important for acceptable performance and reliability devices made up of such capacitors

Optimization of carbon nanotube ultracapacitor for cell design

We report a methodology to optimize vertically grown carbon nanotube (CNT) ultracapacitor (CNU) geometrical features such as CNT length, electrode-to-electrode separation, and CNT packing density. The electric field and electrolyte ionic motion within the CNU are critical in determining the device performance. Using a particle-based model (PBM) based on the molecular dynamics techniques we developed and reported previously, we compute the electric field in the device, keep track of the electrolyte ionic motion in the device volume, and evaluate the CNU electrical performance as a function of the aforementioned geometrical features. We show that the PBM predicts an optimal CNT density. Electrolyte ionic trapping occurs in the high CNT density regime, which limits the electrolyte ions from forming a double layer capacitance. In this regime, the CNU capacitance does not increase with the CNT packing density as expected, but dramatically decreases. Our results compare well with existing experimental data and the PBM methodology can be applied to an ultracapacitor built from any metallic electrode materials, as well as the vertical CNTs studied here

Improved Crystalline Quality of Si\u3csub\u3e1-x\u3c/sub\u3eGe\u3csub\u3ex\u3c/sub\u3e Formed by Low-temperature Germanium Ion Implantation

Improvement of crystalline quality in Si1-xGex formed by germanium ion implantation has been found. End‐of‐range defects were drastically reduced in number by lowering the substrate temperature during implantation with doses on the order of 1016 cm−2. This improvement was confirmed by electrical characterization of p‐n junctions formed in the SiGe layer as well as by transmission electron microscopy

Donor complex formation due to a high-dose Ge implant into Si

To investigate boron deactivation and/or donor complex formation due to a high‐dose Ge and C implantation and the subsequent solid phase epitaxy, SiGe and SiGeC layers were fabricated and characterized. Cross‐sectional transmission electron microscopy indicated that the SiGe layer with a peak Ge concentration of 5 at. % was strained; whereas, for higher concentrations, stacking faults were observed from the surface to the projected range of the Ge as a result of strain relaxation. Photoluminescence (PL) results were found to be consistent with dopant deactivation due to Ge implantation and the subsequent solid phase epitaxial growth of the amorphous layer. Furthermore, for unstrained SiGe layers (Ge peak concentration ≥7 at. %), the PL results support our previously proposed donor complex formation. These findings were confirmed by spreading resistance profiling. A model for donor complex formation is proposed

Thermally Activated Reversible Threshold Shifts in Yba\u3csub\u3e2\u3c/sub\u3eCu\u3csub\u3e3\u3c/sub\u3eO\u3csub\u3e7-δ\u3c/sub\u3e/Yttria-Stabilized Zirconia/Si Capacitors

Yba2Cu3O7-δ/yttria‐stabilized zirconia (YSZ)/silicon superconductor–insulator–semiconductor capacitors are characterized with capacitance‐voltage (C‐V) measurements at different gate‐voltage sweep rates and under bias‐temperature cycling. It is shown that ionic conduction in YSZ causes both hysteresis and stretch‐out in room‐temperature C‐V curves. A thermally activated process with an activation energy of about 39 meV in YSZ and/or at YSZ/Si interface is attributed to trapping/detrapping mechanisms in the SiOx interfacial layer between YSZ and Si. The negative mobile ions in YSZ can be moved by an applied electric field at room temperature and then ‘‘frozen’’ with decreasing temperature, giving rise to adjustable threshold voltages at low temperatures

Characterization of SiGe/Si Heterostructures Formed by Ge+ and C+ Implantation

Formation of SiGe/Si heterostructures by germanium ion implantation was investigated. A germanium‐implanted layer was grown epitaxially in the solid phase by thermal annealing. Two kinds of crystalline defects were observed. One is a misfit dislocation, and the other is a residual dislocation caused by ion bombardment. The p‐n junction formed in the SiGe layer has a leakage current three orders of magnitude larger than that of a pure Si p‐n junction fabricated with an identical process except for the Ge+ implantation. Carbon doping in the SiGe layer improves its crystalline quality and the junction characteristics

Length dependence of current-induced breakdown in carbon nanofiber interconnects

Current-induced breakdown is investigated for carbon nanofibers (CNF) for potential interconnect applications. The measured maximum current density in the suspended CNF is inversely proportional to the nanofiber length and is independent of diameter. This relationship can be described with a heat transport model that takes into account Joule heating and heat diffusion along the CNF, assuming that breakdown occurs when and where the temperature reaches a threshold or critical value

Extraction of contact resistance in carbon nanofiber via interconnects with varying lengths

A method to extract the contact resistance and bulk resistivity of vertically grown carbon nanofibers (CNFs) or similar one-dimensional nanostructures is described. Using a silicon-compatible process to fabricate a terrace test structure needed for the CNF length variation, the contact resistance is extracted by measuring in situ the resistances of individual CNFs with different lengths and within a small range of diameters using a nanoprober inside a scanning electron microscope. Accurate determination of contact resistances for various combinations of catalysts and underlayer metals can lead to eventual optimization of materials’ growth and device fabrication processes for CNF via interconnects

Electrical and Structural Analysis of CNT-Metal Contacts in Via Interconnects

Vertically aligned carbon nanotubes grown by plasmaenhanced chemical vapor deposition offer a potentially suitable material for via interconnects in next-generation integrated circuits. Key performance-limiting factors include high contact resistance and low carbon nanotube packing density, which fall short of meeting the requirements delineated in the ITRS roadmap for interconnects. For individual carbon nanotube s, contact resistance is a major performance hurdle since it is the dominant component of carbon nanotube interconnect resistance, even in the case of vertically aligned carbon nanotube arrays. In this study, we correlate the carbon nanotube-metal interface nanostructure to their electrical properties in order to elucidate growth parameters that can lead to high density and low contact resistance and resistivity

Structural Characteristics of Carbon Nanofibers for On-chip Interconnect Applications

In this letter, we compare the structures of plasma-enhanced chemical vapor deposition of Ni-catalyzed and Pd-catalyzed carbon nanofibers (CNFs) synthesized for on-chip interconnect applications with scanning transmission electron microscopy (STEM). The Ni-catalyzed CNF has a conventional fiberlike structure and many graphitic layers that are almost parallel to the substrate at the CNF base. In contrast, the Pd-catalyzed CNF has a multiwall nanotubelike structure on the sidewall spanning the entire CNF. The microstructure observed in the Pd-catalyzed fibers at the CNF-metal interface has the potential to lower contact resistance significantly, as our electrical measurements using current-sensing atomic force microscopy indicate. A structural model is presented based on STEM image analysis