Impact of urbanization on agricultural ecological efficiency: evidence from China

ABSTRACT: Agricultural ecological efficiency is of great value to the government’s agricultural policy formulation. Research on the factors affecting agricultural ecological efficiency can provide support for the formation of countermeasures to improve agricultural ecological efficiency. Existing research has not conducted an in-depth analysis of the impact of urbanization on agricultural ecological efficiency, and there is a lack of relevant research on the impact of urbanization on agricultural ecological efficiency. This article is based on the data of 30 provinces and cities in China from 2009 to 2018, using the SBM model that considers undesired output, entropy method, Tobit model and other models and methods to measure agricultural ecological efficiency and urbanization comprehensive index, and analyze the impact of urbanization comprehensive index and urbanization indicators on agricultural ecological efficiency. The research results are as follows: 1) The overall agricultural ecological efficiency in China’s 30 provinces and cities has been increasing from 2009 to 2018. The eastern region has the highest agricultural ecological efficiency, followed by the western region, and the central and northeastern regions have relatively low values; 2) The comprehensive urbanization index of China’s 30 provinces and cities continued to grow from 2009 to 2018.The level of urbanization in the eastern region is the highest, in the central region has increased rapidly from 2009 to 2018, and in the western and northeastern regions is relatively low; 3) The overall increase in urbanization can promote the improvement of agricultural ecological efficiency. The impact of specific urbanization indicators on agricultural ecological efficiency is complex. Therefore, discussing the impact of urbanization on agricultural ecological efficiency cannot be considered from a single aspect, but should be analyzed from multiple perspectives.</div

Additional file 2 of Downregulation of ADAM17 in pediatric immune thrombocytopenia impairs proplatelet formation

Additional file 2: Supplementary Figure S2. Results of the full-length gels and blots of western blots referring to murine ADAM17 Zn△/ Zn△megakaryocytes. (A) The full-length gels and blots of p-MLC. (B) The full-length gels and blots of β-actin

Additional file 1 of Downregulation of ADAM17 in pediatric immune thrombocytopenia impairs proplatelet formation

Additional file 1: Supplementary Figure S1. Flow cytometry analysis of expression levels of ADAM17 and GP Ib α. (A) Results of flow cytometry analysis in healthy controls (n=8) and children with ITP(n=6). (B) Quantification of ADAM17 and GP Ib α by MFI

A Spiro-MeOTAD/Ga₂O₃/Si p‑i‑n Junction Featuring Enhanced Self-Powered Solar-Blind Sensing via Balancing Absorption of Photons and Separation of Photogenerated Carriers

Solar blind ultraviolet (SBUV) self-powered photodetectors (PDs) have a great number of applications in civil and military exploration. Ga2O3 is a prospective candidate for SBUV detection owing to its reasonable bandgap corresponding to the SBUV waveband. Nevertheless, the previously reported Ga2O3 photovoltaic devices had low photoresponse performance and were still far from the demands of practical application. Herein, we propose an idea of using spiro-MeOTAD (spiro) as the SBUV transparent conductive layer to construct p-i-n PDs (p-spiro/Ga2O3/n-Si). With the aid of double built-in electric fields, the designed p-i-n PDs could operate without any external power source. Furtherly, the influence of spiro thickness on improving the photoelectric performance of devices is investigated in detail and the optimum device is achieved, translating to a peak responsivity of 192 mA/W upon a weak 254 nm light illumination of 2 μW/cm2 at zero bias. In addition, the I–t curve of our PD shows binary response characteristics and a four-stage current response behavior under a small forward bias, and also, its underlying working mechanism is analyzed. In sum, this newly developed device presents great potential for booming the high energy-efficient optoelectronic devices in the short run