Nanoscale mapping for near-field heating under 1210 nm particles.

<p>(a) Raman intensity <i>I</i> variation for silicon along the mapping direction under particles of 1210 nm diameter with laser irradiation. (b) The <i>x</i> direction variation of Raman intensity <i>I</i>, Raman wavenumber <i>ω</i>, and linewidth <i>Γ</i> for silicon with laser irradiation of 3.1×10⁹ W/m² (79%). (c) The distance between laser beam axis and Raman signal collecting axis of Raman spectrometer. (d) The position of a silica particle relative to the laser beam axis and Raman signal collecting axis to explain the observed Raman variation in space.</p

Temperature rise and thermal stress inside silicon under particle-focused laser irradiation.

<p>(a) How Raman intensity of silicon under 1210 nm silica particles () and that of pure silicon () vary with energy percentage (<i>E/E</i>_full). (b) Normalized Raman intensity ratio () and (c) temperature rise (<i>ΔT</i>) versus energy percentage. The inset in figure (b) shows the linear relation between normalized Raman intensity of silicon (<i>I</i>/<i>I</i>₀) and temperature with a slope of −0.00249 K⁻¹. <i>I</i>₀ is the intensity of silicon at 292.0 K. (d) Raman linewidth and (e) Raman wavenumber of silicon under particles and their differences with those of pure silicon. (f) Raman wavenumber and linewidth changes due to temperature rise. (g) Raman wavenumber and linewidth changes due to out-of-focus effect. (h) Thermal stress (<i>σ</i>) and Raman wavenumber change induced by stress under different laser energies.</p

Schematic of experimental setup for far-field nanoscale imaging (not to scale).

<p>(a) A sample is located under an objective-focused laser beam from a Raman spectrometer. The movement of sample in the <i>x</i> direction is controlled by a piezo-actuated nano-stage. The focal level of the laser on the sample in the <i>z</i> direction is controlled by a motorized micro-stage. (b) The sample consists of a silicon substrate and a monolayer of silica particles. The spot size of the incident laser is about 0.5 μm in the <i>x</i>-<i>y</i> plane on a silicon substrate. (c) The Raman spectrum shifts to left due to the near-field laser heating, stress, and the out-of-focus effect. (d) The silicon substrate is heated in a sub-wavelength region (<i>r</i> ∼200 nm) right beneath the particles. (e) During the experiment, the position of the laser beam is fixed, and the sample moves along the <i>x</i> direction controlled by the nano-stage electrically without any touch of the sample and other equipment. The step of movement is 27 nm in a range of about 4 μm.</p

Nanoscale mapping for different sizes of particles.

<p>The Raman intensity <i>I</i>, Raman wavenumber <i>ω</i>, and linewidth <i>Γ</i> for silicon under particles of (a) 800 nm and (b) 400 nm diameters with laser irradiation. (c) SEM images of 200 nm particles on a substrate. The average diameter of the particles is about 160 nm. (d) The Raman intensity of silicon under particles of 200 nm diameter along the <i>x</i> direction. (e) The variation of maximum intensity ratio in silicon with particle size under four laser energy fluxes.</p

Modeling results and difference illustration.

<p>(a) HFSS modeling of a plane wave passing through a 1.21 μm silica sphere (<i>ε</i> = 2.13+ 0<i>i</i>) in air above a silicon substrate (<i>ε</i> = 17.22+0.428<i>i</i>). The amplitude of electric field is equal to the enhancement factor. In the left figure, the particle center is under the laser spot center. In the right figure, the particle center is at the fringe of the laser spot area. (b) Temperature profile inside a silicon substrate beneath a 1210-nm silica particle under laser irradiation. The inset shows the temperature distribution on the top of the substrate. (c) How the collected Raman signal varies with distance between the center of objective lens and laser focusing point in silicon. Position 1 represents the coincidence of the focusing point and the lens center, and position 2 shows a distance between them. (d) The variation of silicon Raman intensity with the laser focal level in the vertical direction.</p

SEM images of 2-D monolayer array of silica particles assembled on a silicon wafer.

<p>The average diameter of the particles is about 1120 nm.</p

Affinity of VH variants at 35°C.

<p>Affinity of VH variants at 35°C.</p

Temperature dependence of cell-scale lignocellulose's thermal conductivity.

<p>The inset shows the x-Ray Diffraction results of cell-scale lignocellulose.</p

Cross section of cell-scale lignocellulose and the thickness measurement: (a) cross section of sample.

<p>(b–d) magnified figure to show the thickness in different sections.</p

The framework amino acid sequences of the leads selected from the ccFv humanization library for the anti-VEGF antibody.

<p>All three leads, X72, X76, and X78, differed from WT at the E6Q and L11V mutations in the V_H framework 1. The Kabat numbering scheme was used for residue numbering.</p