10 research outputs found
Frontier Molecular Orbital Engineering of Aromatic Donor Fusion: Modularly Constructing Highly Efficient Narrowband Yellow Electroluminescence
The development of high-performance
multiple resonance thermally
activated delayed fluorescence (MR-TADF) materials with narrowband
yellow emission is highly critical for various applications in industries,
such as the automotive, aerospace, and microelectronic industries.
However, the modular construction approaches to expeditiously access
narrowband yellow-emitting materials is relatively rare. Here, a unique
molecular design concept based on frontier molecular orbital engineering
(FMOE) of aromatic donor fusion is proposed to strategically address
this issue. Donor fusion is a modular approach with a āleveraging
effectā; through direct polycyclization of donor attached to
the MR parent core, it is facile to achieve red-shifted emission by
a large margin. As a result, two representative model molecules, namely
BN-Cz and BN-Cb, have been constructed successfully. The BN-Cz- and
BN-Cb-based sensitized organic light-emitting diodes (OLEDs) exhibit
bright yellow emission with peaks of 560 and 556 nm, full-width at
half-maxima (fwhmās) of 49 and 45 nm, Commission Internationale
de LāEclairage coordinates of (0.44, 0.55) and (0.43, 0.56),
and maximum external quantum efficiencies (EQEs) of 32.9% and 29.7%,
respectively. The excellent optoelectronic performances render BN-Cz
and BN-Cb one of the most outstanding yellow-emitting MR-TADF materials
Two-Dimensional Organic Single Crystals with Scale Regulated, Phase-Switchable, Polymorphism-Dependent, and Amplified Spontaneous Emission Properties
The successful preparation
of two-dimensional (2D) single crystals
can promote the development of organic optoelectronic devices with
excellent performance. A Schiff base compound salicylideneĀ(4-dimethylamino)Āaniline
with aggregation induced emission (AIE) property was employed as the
building block to fabricate 2D thin single crystal plates with scales
from around 50 Ī¼m to 1.5 cm. Yellow and red emissive polymorphs
were concomitantly obtained during crystallization. The single-crystal-to-single-crystal
(SC-to-SC) transformation from yellow polymorph to red one was demonstrated.
Furthermore, both polymorphs exhibited amplified spontaneous emission
(ASE) properties. Interestingly, the red polymorph displayed size-dependent
ASE characteristics. The larger red polymorph showed near-infrared
ASE with maximum at 706 nm, whereas the smaller one presented red
ASE with maximum at 610 nm. These results suggest that the different
scale single crystalline thin films with perfect optoelectronic properties
may be fabricated by using the organic molecules with 2D assembly
feature
High Performance Small-Molecule Cathode Interlayer Materials with DāAāD Conjugated Central Skeletons and Side Flexible Alcohol/Water-Soluble Groups for Polymer Solar Cells
A new
class of organic cathode interfacial layer (CIL) materials based on
isoindigo derivatives (IID) substituted with pyridinium or sulfonate
zwitterion groups were designed, synthesized, and applied in polymer
solar cells (PSCs) with PTB7:PC<sub>71</sub>BM (PTB7: polythienoĀ[3,4-<i>b</i>]-thiophene-<i>co</i>-benzodithiophene and PC<sub>71</sub>BM: [6,6]-phenyl C71-butyric acidmethyl ester) as an active
layer. Compared with the control device, PSCs with an IID-based CIL
show simultaneous enhancement of open-circuit voltage (<i>V</i><sub>oc</sub>), short-circuit current (<i>J</i><sub>sc</sub>), and fill factor (FF). Systematic optimizations of the central
conjugated core and side flexible alcohol-soluble groups demonstrated
that isoindigo-based CIL material with thiophene and sulfonate zwitterion
substituent groups can efficiently enhance the PSC performance. The
highest power conversion efficiency (PCE) of 9.12%, which is 1.75
times that of the control device without CIL, was achieved for the
PSC having an isoindigo-based CIL. For the PSCs with an isoindigo-based
CIL, the molecule-dependent performance property studies revealed
that the central conjugated core with D-A-D characteristics and the
side chains with sulfonate zwitterions groups represents an efficient
strategy for constructing high performance CILs. Our study results
may open a new avenue toward high performance PSCs
Large ĻāConjugated Quinacridone Derivatives: Syntheses, Characterizations, Emission, and Charge Transport Properties
Two 11-ring-fused quinacridone derivatives,
TTQA and DCNTTQA, have
been synthesized by ferric chloride mediated cyclization and Knoevenagel
reaction. Replacement of the carbonyl groups (in TTQA) with dicyanoethylene
groups (in DCNTTQA) not only red-shifted the emission to the near-infrared
region but also led to a nonplanar skeleton that significantly improved
the solubility of DCNTTQA. Moreover, dicyanoethylene groups rendered
DCNTTQA low-lying HOMO and LUMO levels. DCNTTQA-based solution-processed
field-effect transistors showed a hole mobility up to 0.217 cm<sup>2</sup> V<sup>ā1</sup> s<sup>ā1</sup>
Single-Molecule-based White-Light Emissive Organic Solids with Molecular-Packing-Dependent Thermally Activated Delayed Fluorescence
White-light-emitting
single molecules have attracted broad attention
because of their great potential for use in flat-panel displays and
future light sources. We report a unique molecule of 3-(diphenylamino)-9<i>H</i>-xanthen-9-one (3-DPH-XO), which was found to exhibit bright
white-light emission in the solid state caused by the spontaneous
formation of a mixture with different polymorphs. Single-crystal analyses
demonstrate that noncovalent interactions (such as ĻĀ·Ā·Ā·Ļ
stacking, hydrogen bonding, and CāHĀ·Ā·Ā·Ļ
interactions) induce different stacking arrangements (polymorphs <b>A</b>, <b>B</b>, and <b>C</b>) with different photophysical
properties in a molecular solid. In addition, crystals <b>B</b> and <b>C</b> with the acceptorĀ·Ā·Ā·acceptor stacking
feature show the thermally activated delayed fluorescence (TADF) characteristics,
indicating that appropriate noncovalent interactions could enhance
the reverse intersystem crossing process and consequently lead to
delayed fluorescence. This discovery provides an effective strategy
for the design of new white-light-emitting single molecules as well
as TADF materials
Highly Efficient Long-Wavelength Thermally Activated Delayed Fluorescence OLEDs Based on Dicyanopyrazino Phenanthrene Derivatives
Highly
efficient long-wavelength thermally activated delayed fluorescence
(TADF) materials are developed using 2,3-dicyanopyrazino phenanthrene
(DCPP) as the electron acceptor (A), and carbazole (Cz), diphenylamine
(DPA), or 9,9-dimethyl-9,10-dihydroacridine (DMAC) as the electron
donor (D). Because of the large, rigid Ļ-conjugated structure
and strong electron-withdrawing capability of DCPP, TADF molecules
with emitting colors ranging from yellow to deep-red are realized
with different electron-donating groups and Ļ-conjugation length.
The connecting modes between donor and acceptor, that is, with or
without the phenyl ring as Ļ-bridge, are also investigated to
study the Ļ-bridge effect on the thermal, photophysical, electrochemical,
and electroluminescent properties. Yellow, orange, red, and deep-red
organic light-emitting diodes (OLEDs) based on DCPP derivatives exhibit
high efficiencies of 47.6 cd A<sup>ā1</sup> (14.8%), 34.5 cd
A<sup>ā1</sup> (16.9%), 12.8 cd A<sup>ā1</sup> (10.1%),
and 13.2 cd A<sup>ā1</sup> (15.1%), with Commission Internationale
de LāEclairage (CIE) coordinates of (0.44, 0.54), (0.53, 0.46),
(0.60, 0.40), and (0.64, 0.36), respectively, which are among the
best values for long-wavelength TADF OLEDs
Multiheterojunction Phototransistors Based on GrapheneāPbSe Quantum Dot Hybrids
Graphene-semiconductor
quantum dot (QD) hybrid field effect phototransistors (FEpTs) have
attracted much interest due to their ultrahigh gain and responsivity
in photo detection. However, most reported results are based on single-layer
heterojunction, and the multiheterojunction FEpTs are often ignored.
Here, we design two typical multiheterojunction FEpTs based on grapheneāPbSe
quantum dot (QD) hybrids, including QD at the bottom layer (QD-bottom)
and graphene at the bottom layer (G-bottom) FEpTs. Through a comparative
study, G-bottom FEpTs showed a multisaturation behavior due to the
multigraphene layer effect, which was absent in the QD-bottom FEpTs.
The mobilities for electrons and holes were Ī¼<sub>E</sub> =
147 cm<sup>2</sup> V<sup>ā1</sup> s<sup>ā1</sup> and
Ī¼<sub>E</sub> = 137 cm<sup>2</sup> V<sup>ā1</sup> s<sup>ā1</sup> in the G-bottom FEpTs and Ī¼<sub>E</sub> = 14
cm<sup>2</sup> V<sup>ā1</sup> s<sup>ā1</sup> and Ī¼<sub>E</sub> = 59 cm<sup>2</sup> V<sup>ā1</sup> s<sup>ā1</sup> in the QD-bottom FEpTs. Higher responsivity (ā¼10<sup>6</sup> A W<sup>ā1</sup>) and faster response rate were both achieved
by the G-bottom FEpTs. All of the advantages in G-bottom FEpTs were
attributed to the back-gate effect. Therefore, high performance is
expected in those FEpTs whose heterojunctions are designed to be close
to the back-gate
Ambipolar Quantum-Dot-Based Low-Voltage Nonvolatile Memory with Double Floating Gates
Considerable research efforts have
been devoted to promoting memory performance, especially the memory
window and retention time. In this work, we develop an innovative
field-effect-transistor memory with graphene oxide (GO)/gold nanoparticles
(Au NPs) as double floating gates (DFG) and PbS quantum dots (QDs)
as the semiconductor layer. QDs can provide both electrons and holes
in the channel, which offers a chance for the floating gates to trap
both of them to achieve bidirectional threshold voltage shifts after
programming and erasing operations. Due to the DFG structure covering
the GO sheets on the Au NP monolayer, the enhanced memory window (ā¼2.72
V at a programming/erasing voltage of Ā±10 V) can be attributed
to more charge carriers being trapped in the floating gates. More
importantly, because of the different energy levels between GO and
Au NPs, the DFG construction brings about an energy barrier that prevents
the trapped charges from leaking back to the channel, so that the
retention capability is significantly improved. The outstanding memory
performance will give the QD-based DFG memory great potential to have
its own place in the flash memory market
PbS-Decorated WS<sub>2</sub> Phototransistors with Fast Response
Tungsten disulfide (WS<sub>2</sub>), as a typical metal dichalcogenides
(TMDs), has aroused keen research interests in photodetection. Here,
field effect phototransistors (FE<sub>p</sub>Ts) based on heterojunction
between monolayer WS<sub>2</sub> and PbS colloidal quantum dots are
demonstrated to show high photoresponsivity (up to ā¼14 A/W),
wide electric bandwidth (ā¼396 Hz), and excellent stability.
Meanwhile, the devices exhibit fast photoresponse times of ā¼153
Ī¼s (rise time) and ā¼226 Ī¼s (fall time) due to the
assistance of heterojunction on the transfer of photoexcitons. Therefore,
excellent device performances strongly underscore monolayer WS<sub>2</sub>āPbS quantum dot as a promising material for future
photoelectronic applications
Broadband Phototransistor Based on CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> Perovskite and PbSe Quantum Dot Heterojunction
Organic lead halide
perovskites have received a huge amount of
interest since emergence, because of tremendous potential applications
in optoelectronic devices. Here field effect phototransistors (FE<sub>p</sub>Ts) based on CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> perovskite/PbSe
colloidal quantum dot heterostructure are demonstrated. The high light
absorption and optoelectric conversion efficiency, due to the combination
of perovskite and quantum dots, maintain the responsivities in a high
level, especially at 460 nm up to 1.2 A/W. The phototransistor exhibits
bipolar behaviors, and the carrier mobilities are determined to be
0.147 cm<sup>2</sup>V<sup>ā1</sup>s<sup>ā1</sup> for
holes and 0.16 cm<sup>2</sup>V<sup>ā1</sup>s<sup>ā1</sup> for electrons. The device has a wide spectral response spectrum
ranging from 300 to 1500 nm. A short photoresponse time is less than
3 ms due to the assistance of heterojunction on the transfer of photoexcitons.
The excellent performances presented in the device especially emphasize
the CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> perovskiteāPbSe
quantum dot as a promising material for future photoelectronic applications