29 research outputs found
Reduction of Threading Dislocation Density in Sputtered Ge/Si(100) Epitaxial Films by Continuous-Wave Diode Laser-Induced Recrystallization
We have developed
a cost-effective, up-scalable, and high-throughput method combining
continuous-wave (CW) diode laser and magnetron sputtering for fabricating
low-defect single-crystalline Ge films for high-efficiency IIIâV
solar cell applications. CW diode laser-induced recrystallization
is demonstrated to dramatically reduce the threading dislocation density
(TDD) of sputter-deposited single-crystalline Ge/Si epitaxial films
by more than 3 orders of magnitude. This might be due to the change
of growth mechanism from initial Ge/Si heteroepitaxy in the sputtering
process to Ge/Ge homoepitaxy by the laser-induced lateral recrystallization
process, overcoming the typical issue of Ge/Si lattice mismatch to
achieve low TDD
Spatial Grain Growth and Composition Evolution during Sulfurizing Metastable Wurtzite Cu<sub>2</sub>ZnSnS<sub>4</sub> Nanocrystal-Based Coatings
A drawback
of nanocrystal-based processing, that leads to the notoriously poor
crystallinity of pure-sulfide Cu<sub>2</sub>ZnSnS<sub>4</sub> absorber,
was recently reported to be effectively overcome by the annealing
of thin films made from the ink of metastable wurtzite Cu<sub>2</sub>ZnSnS<sub>4</sub> nanocrystals in a combined S and SnS atmosphere.
However, the formation pathway from nanometer-sized crystals in the
wurtzite phase to micrometer-sized grains with the kesterite phase
during this process still lacks in-depth study. In this work, the
spatial grain growth and composition evolution during the sulfurization
of wurtzite nanocrystal coatings are systematically investigated by
classifying samples into temperature and time series. In the process
of heating up, the reversible migration of Cu and Zn species contributes
to a continuous growth of kesterite Cu<sub>2</sub>ZnSnS<sub>4</sub> grains on the surface. At higher temperature, a fast phase-transition
growth from wurtzite Cu<sub>2</sub>ZnSnS<sub>4</sub> nanoparticles
to kesterite grains is also directly observed in the region away from
the surface. After reaching 580 °C, the thin film experiences
impressive decomposition and reorganization changes as a function
of time, which cause the formation of an absorber with good crystallinity
and homogeneous compositional distribution. The solar cell device,
fabricated by employing this pure-sulfide Cu<sub>2</sub>ZnSnS<sub>4</sub> absorber from wurtzite nanocrystal-based coatings, demonstrated
an energy conversion efficiency of 6.0% in the absence of an antireflection
coating
Emerging chalcohalide materials for energy applications
Semiconductors with multiple anions currently provide a new materials platform from which improved functionality emerges, posing new challenges and opportunities in material science. This review has endeavored to emphasize the versatility of the emerging family of semiconductors consisting of mixed chalcogen and halogen anions, known as âchalcohalidesâ. As they are multifunctional, these materials are of general interest to the wider research community, ranging from theoretical/computational scientists to experimental materials scientists.This review provides a comprehensive overview of the development of emerging Bi- and Sb-based as well as a new Cu, Sn, Pb, Ag, and hybrid organicâinorganic perovskite-based chalcohalides. We first highlight the high-throughput computational techniques to design and develop these chalcohalide materials.We then proceed to discuss their optoelectronic properties,band structures, stability, and structural chemistry employing theoretical and experimental underpinning toward high-performance devices. Next, we present an overview of recent advancements in the synthesis and their wide range of applications in energy conversion and storage devices. Finally, we conclude the review by outlining the impediments and important aspects in this field as well as offering perspectives on future research directions to further promote the development of chalcohalide materials in practical applications in the future.</p
A Green Lead Recycling Strategy from Used Lead Acid Batteries for Efficient Inverted Perovskite Solar Cells
Lead
is widely used as a crucial elemental for lead acid batteries
(LABs) and emerging halide perovskite solar cells (PSCs). However,
the use of soluble lead will raise environmental concerns. For the
purpose of Pb recycling, herein, we report a reactant-recycling strategy
to extract Pb from used LABs and synthesize high-purity PbI2. The recycled PbI2 shows smaller grain size, higher crystallinity,
and higher thermal stability compared to the commercial sources. Perovskite
films deposited with the high-quality PbI2 show larger
grain size and fewer defects than the commercial ones. Consequently,
the synthesized PbI2 enables a power conversation efficiency
of 20.45% for the inverted MAPbI3 (MA= methylammonium)
PSCs with excellent air stability. This work offers a novel strategy
for lead recovery from LABs and a green path for the realization of
high-performance PSCs with high defect tolerance
Methylammonium Lead Bromide Perovskite-Based Solar Cells by Vapor-Assisted Deposition
The past two years have seen the
uniquely rapid emergence of a
new class of solar cell based on organicâinorganic halide perovskite.
Although less explored than its tri-iodide counterparts, CH<sub>3</sub>NH<sub>3</sub>PbBr<sub>3</sub> has a larger bandgap of 2.3 eV with
a higher voltage potential that is suitable for tandem solar cell
applications. In this paper, we report a vapor-assisted method for
depositing and fully crystallizing CH<sub>3</sub>NH<sub>3</sub>PbBr<sub>3</sub> film on mesoporous TiO<sub>2</sub> with good coverage. CH<sub>3</sub>NH<sub>3</sub>PbBr<sub>3</sub> fabricated using this method
has demonstrated long carrier diffusion length (>1 ÎŒm) as
estimated
by transient photoluminescence-quenching measurements. We demonstrate
solar cells fabricated using such films and spiro-OMeTAD as the hole
transport layer with an averaged (from forward and reverse scans)
conversion efficiency of 8.7%, <i>V</i><sub>oc</sub> of
1.45 V, <i>J</i><sub>sc</sub> of 9.75 mA/cm<sup>2</sup>,
and fill factor of 61.5%
Evidence of Low-Temperature Joints in Silver Nanowire Based Transparent Conducting Layers for Solar Cells
The
primary stage of joint formation of silver nanowires (AgNWs)
at 60 °C is investigated by using rotary scanning transmission
electron microscopy (STEM with tomographic reconstruction images)
and super-large-scale molecular dynamic (MD) simulation (2 Ă
106 atoms). This study proves to establish that silver
nanowires do not require the conventional high-temperature post-treatment
process at 200 °C to form fused contacts at the intersections.
In fact, a low-temperature annealing at 60 °C facilitates formation
of highly conductive networks. The connection between the nanowires
is made through a stage called thinning, shown in this report for
the first time, which occurs before broadening of the nanowires and
is caused due to simultaneous effects of loads from the top nanowires
and the heating, as confirmed by STEM and MD results. The outcomes
of our investigation significantly promote the application of AgNWs
as a transparent conductive layer for solar cells with requirement
of low-temperature processing such as kasterite, perovskite, and organic
solar cells
Additional file 1 of Long read sequencing revealed proventricular virome of broiler chicken with transmission viral proventriculitis
Additional file 1. Supplementary figure
Additional file 1 of Serological investigation of Gyrovirus homsa1 infections in chickens in China
Additional file 1
Understanding the Key Factors of Enhancing Phase and Compositional Controllability for 6% Efficient Pure-Sulfide Cu<sub>2</sub>ZnSnS<sub>4</sub> Solar Cells Prepared from Quaternary Wurtzite Nanocrystals
Pure-sulfide Cu<sub>2</sub>ZnSnS<sub>4</sub> thin film solar cells
were fabricated employing a facile and low-cost preparation procedure
by depositing wurtzite CZTS nanocrystals, followed by high temperature
sulfurization. The exploration of previously reported devices with
>4.8% efficiency has demonstrated the potential application of
wurtzite
nanocrystals in optoelectronic devices. Moreover, TEM-EDS characterization
revealed the presence of compositional fluctuations within the fine-grained
sublayer that may limit the performance of the final devices. To reduce
the fine-grained sublayer and further improve the crystalline quality
of the active large-grained layer of our solar cells, the Na doping
method and the sulfurization process were both systematically studied
in this work. The crystal phase, morphology, elemental composition,
and photovoltaic performance were characterized. These results indicate
that, for the wurtzite material system, (1) tuning the Na amount is
necessary, yet insufficient to ensure the good performance of solar
cells and (2) the introduction of SnS powder in the sulfurization
treatment provides leverage with which to improve the microstructure
and compositional distribution of the final absorber. By employing
this leverage to optimize our CZTS absorbers prepared from quaternary
wurtzite nanocrystals, the performances of solar cells has been increased
to 6.0% in the absence of an antireflection coating
Unraveling the Mechanism of Ion-Migration Suppression by Interstitial Doping for Operationally Stable CsPbI<sub>2</sub>Br Perovskite Solar Cells
Despite
the remarkable advances of inorganic perovskite solar cells
(PSCs) by extrinsic metal doping, the doping mechanism and physical
location of doping ions are still ambiguous. Herein, the ion-migration
behavior of inorganic PSCs is studied theoretically and experimentally
for Sm-doped CsPbI2Br perovskites. The structural characterizations
and density functional theory (DFT) calculation confirm the interstitial
occupancy of the dopant Sm in the CsPbI2Br perovskite lattice.
The ion-migration behavior was systematically unveiled by employing
multiple photoelectrochemical techniques. The results show that with
Sm interstitial doping in the CsPbI2Br perovskite, the
operational stability of PSCs is dramatically improved owing to effectively
suppressed ion migration, demonstrated by alleviated VOC change at different scan rates, weaker response to
electric poling, faster photocurrent response, higher activation energy
of mobile ions, and much more stable maximum power point (MPP) tracking
performance. With theoretical model-supported experimental investigation,
this research unravels the mechanism of ion-migration suppression
in CsPbI2Br PSCs by interstitial doping. This may pave
the way to achieve operational stability of PSCs through facile cost-effective
practice