4 research outputs found
Two-Dimensional Semiconducting Boron Monolayers
The two-dimensional boron monolayers were reported to be metallic both in
previous theoretical predictions and experimental observations, however, we
have firstly found a family of boron monolayers with the novel semiconducting
property as confirmed by the first-principles calculations with the
quasi-particle G0W0 approach. We demonstrate that the vanished metallicity
characterized by the pz-derived bands cross the Fermi level is attributed to
the motif of a triple-hexagonal-vacancy, with which various semiconducting
boron monolayers are designed to realize the band-gap engineering for the
potential applications in electronic devices. The semiconducting boron
monolayers in our predictions are expected to be synthesized on the proper
substrates, due to the similar stabilities to the ones observed experimentally.Comment: 12 pages, 4 figure
A Practical Criterion for Screening Stable Boron Nanostructures
Due
to the electron deficiency, boron clusters evolve strikingly
with the increasing size as confirmed by experimentalists and theorists.
However, it is still a challenge to propose a model potential to describe
the stabilities of boron. On the basis of the 2c-2e and 3c-2e bond
models, we have found the constraints for stable boron clusters, which
can be used for determining the vacancy concentration and screening
the candidates. Among numerous tubular structures and quasi-planar
structures, we have verified that the stable clusters with lower formation
energies bounded by the constraints, indicating the competition of
tubular and planar structures. Notably, we have found a tubular cluster
of B<sub>76</sub> which is more stable than the B<sub>80</sub> cage.
We show that the vacancies, as well as the edge, are necessary for
the 2c-2e bonds, which will stabilize the boron nanostructures. Therefore,
the quasi-planar and tubular boron nanostructures could be as stable
as the cages, which have no edge atoms. Our finding has shed light
on understanding the complicated electron distributions of boron clusters
and enhancing the efficiency of searching stable B nanostructures
Competition between Pauli Exclusion and H‑Bonding: H<sub>2</sub>O and NH<sub>3</sub> on Silicene
We demonstrate that the competition
between Pauli exclusion and
H-bonding dominates the adsorption of H<sub>2</sub>O on silicene through
first-principles calculations. It explains the bewildering problem
that isolated H<sub>2</sub>O is inert on silicene while isolated NH<sub>3</sub> tends to chemisorption. Moreover, Pauli exclusion can be
overcome by the synergetic effect of Si···O dative
bonding and intermolecular H-bonding. As a result, H<sub>2</sub>O
molecules are readily to chemisorb in clusters. It is expected that
the competition is in general polar molecule adsorption on silicene
and, thus, crucial for the adsorption mechanism
Highly Efficient and Stable Narrow-Band Red Phosphor Cs<sub>2</sub>SiF<sub>6</sub>:Mn<sup>4+</sup> for High-Power Warm White LED Applications
Due
to the unique narrow-band red emission and broadband blue light
excitation, as well as milder synthesis conditions, Mn<sup>4+</sup> ion activated fluoride red phosphors show great promise for white
light emitting diode (W-LED) applications. However, as the Mn<sup>4+</sup> emission belongs to a spin-forbidden transition (<sup>2</sup>E<sub>g</sub> → <sup>4</sup>A<sub>2</sub>), it is a fundamental
challenge to synthesize these phosphors with a high external quantum
efficiency (EQE) above 60%. Herein, a highly efficient and thermally
stable red fluoride phosphor, Cs<sub>2</sub>SiF<sub>6</sub>:Mn<sup>4+</sup>, with a high internal quantum efficiency (IQE) of 89% and
ultrahigh EQE of 71% is demonstrated. Furthermore, nearly 95% of the
room-temperature IQE and EQE are maintained at 150 °C. The static
and dynamic spectral measurements, as well as density functional theory
(DFT) calculations, show that the excellent performance of Cs<sub>2</sub>SiF<sub>6</sub>:Mn<sup>4+</sup> is due to the Mn<sup>4+</sup> ions being evenly distributed in the host lattice Cs<sub>2</sub>SiF<sub>6</sub>. By employing Cs<sub>2</sub>SiF<sub>6</sub>:Mn<sup>4+</sup> as a red light component, stable 10 W high-power warm W-LEDs
with a luminous efficiency of ∼110 lm/W could be obtained.
These findings indicate that red phosphor Cs<sub>2</sub>SiF<sub>6</sub>:Mn<sup>4+</sup> may be a highly suitable candidate for fabricating
high-performance high-power warm white LEDs