Performance analysis of the IEEE 802.11e block ACK scheme in a noisy channel

A block ACK (BTA) scheme has been proposed in IEEE 802.11e to improve medium access control (MAC) layer performance. It is also a promising technique for next-generation high-speed wireless LANs (WLANs) such as IEEE 802.11n. We present a theoretical model to evaluate MAC saturation throughput of this scheme. This model takes into account the effects of both collisions and transmission errors in a noisy channel. The accuracy of this model is validated by NS-2 simulations

On the Head and the Tail of the Colored Jones Polynomial

The colored Jones polynomial is a series of one variable Laurent polynomials J(K,n) associated with a knot K in 3-space. We will show that for an alternating knot K the absolute values of the first and the last three leading coefficients of J(K,n) are independent of n when n is sufficiently large. Computation of sample knots indicates that this should be true for any fixed leading coefficient of the colored Jones polynomial for alternating knots. As a corollary we get a Volume-ish Theorem for the colored Jones Polynomial.Comment: 14 pages, 6 figure

B\"{a}cklund transformations for the constrained dispersionless hierarchies and dispersionless hierarchies with self-consistent sources

The B\"{a}cklund transformations between the constrained dispersionless KP hierarchy (cdKPH) and the constrained dispersionless mKP hieararchy (cdmKPH) and between the dispersionless KP hieararchy with self-consistent sources (dKPHSCS) and the dispersionless mKP hieararchy with self-consistent sources (dmKPHSCS) are constructed. The auto-B\"{a}cklund transformations for the cdmKPH and for the dmKPHSCS are also formulated.Comment: 11 page

Identification of the major cause of endemically poor mobilities in SiC/SiO2 structures

Materials with good carrier mobilities are desired for device applications, but in real devices the mobilities are usually limited by the presence of interfaces and contacts. Mobility degradation at semiconductor-dielectric interfaces is generally attributed to defects at the interface or inside the dielectric, as is the case in Si/SiO2 structures, where processing does not introduce detrimental defects in the semiconductor. In the case of SiC/SiO2 structures, a decade of research focused on reducing or passivating interface and oxide defects, but the low mobilities have persisted. By invoking theoretical results and available experimental evidence, we show that thermal oxidation generates carbon di-interstitial defects inside the semiconductor substrate and that they are a major cause of the poor mobility in SiC/SiO2 structures

Kramers Weyl Semimetals as Quantum Solenoids and Their Applications in Spin-Orbit Torque Devices

Kramers Weyl semimetals are Weyl semimetals that have Weyl points pinned at the time reversal invariant momenta. Recently it has been discovered that all chiral crystals host Weyl points at time reversal invariant momenta, so metals with chiral lattice symmetry all belong to the category of Kramers Weyl semimetals. In this work, we show that due to the chiral lattice symmetry, Kramers Weyl semimetals have the unique longitudinal magnetoelectric effect in which the charge current induced spin and orbital magnetization is parallel to the direction of the current. This feature allows Kramers Weyl semimetals to act as nanoscale quantum solenoids with both orbital and spin magnetization. As the moving electrons of Kramers Weyl semimetal can generate longitudinal magnetization, Kramers Weyl semimetals can be used for new designs of spin-orbit torque devices with all electric control of magnetization switching for magnets with perpendicular magnetic anisotropy.Comment: 8 pages, 5 figures, supplementary materials included. Comments are welcom

Coexistence of Localized and Extended States in Disordered Systems

It is commonly believed that Anderson localized states and extended states do not coexist at the same energy. Here we propose a simple mechanism to achieve the coexistence of localized and extended states in a band in a class of disordered quasi-1D and quasi-2D systems. The systems are partially disordered in a way that a band of extended states always exists, not affected by the randomness, whereas the states in all other bands become localized. The extended states can overlap with the localized states both in energy and in space, achieving the aforementioned coexistence. We demonstrate such coexistence in disordered multi-chain and multi-layer systems.Comment: 5 pages, 3 figure