Fabrication of mirror templates in silica with micron-sized radii of curvature

We present the fabrication of exceptionally small-radius concave microoptics on fused silica substrates using CO2 laser ablation and subsequent reactive ion etching. The protocol yields on-axis near-Gaussian depressions with radius of curvature $\lesssim5$ microns at shallow depth and low surface roughness of 2 angstroms. This geometry is appealing for cavity quantum electrodynamics where small mode volumes and low scattering losses are desired. We study the optical performance of the structure within a tunable Fabry-Perot type microcavity, demonstrate near-coating-limited loss rates (F = 25,000) and small focal lengths consistent with their geometrical dimensions.Comment: 5 pages, 4 figure

Spin-Polarized Electrons in Monolayer MoS2_2

The optical susceptibility is a local, minimally-invasive and spin-selective probe of the ground state of a two-dimensional electron gas. We apply this probe to a gated monolayer of MoS$_2$. We demonstrate that the electrons are spin polarized. Of the four available bands, only two are occupied. These two bands have the same spin but different valley quantum numbers. We argue that strong Coulomb interactions are a key aspect of this spontaneous symmetry breaking. The Bohr radius is so small that even electrons located far apart in phase space interact, facilitating exchange couplings to align the spins

Deterministic enhancement of coherent photon generation from a nitrogen-vacancy center in ultrapure diamond

The nitrogen-vacancy (NV) center in diamond has an optically addressable, highly coherent spin. However, an NV center even in high quality single-crystalline material is a very poor source of single photons: extraction out of the high-index diamond is inefficient, the emission of coherent photons represents just a few per cent of the total emission, and the decay time is large. In principle, all three problems can be addressed with a resonant microcavity. In practice, it has proved difficult to implement this concept: photonic engineering hinges on nano-fabrication yet it is notoriously difficult to process diamond without degrading the NV centers. We present here a microcavity scheme which uses minimally processed diamond, thereby preserving the high quality of the starting material, and a tunable microcavity platform. We demonstrate a clear change in the lifetime for multiple individual NV centers on tuning both the cavity frequency and anti-node position, a Purcell effect. The overall Purcell factor $F_{\rm P}=2.0$ translates to a Purcell factor for the zero phonon line (ZPL) of $F_{\rm P}^{\rm ZPL}\sim30$ and an increase in the ZPL emission probability from $\sim 3 \%$ to $\sim 46 \%$. By making a step-change in the NV's optical properties in a deterministic way, these results pave the way for much enhanced spin-photon and spin-spin entanglement rates.Comment: 6 pages, 4 figure

Voltage-Controlled Optics of a Quantum Dot

We show how the optical properties of a single semiconductor quantum dot can be controlled with a small dc voltage applied to a gate electrode. We find that the transmission spectrum of the neutral exciton exhibits two narrow lines with $\sim 2$ $\mu$eV linewidth. The splitting into two linearly polarized components arises through an exchange interaction within the exciton. The exchange interaction can be turned off by choosing a gate voltage where the dot is occupied with an additional electron. Saturation spectroscopy demonstrates that the neutral exciton behaves as a two-level system. Our experiments show that the remaining problem for manipulating excitonic quantum states in this system is spectral fluctuation on a $\mu$eV energy scale.Comment: 4 pages, 4 figures; content as publishe

Transform-limited single photons from a single quantum dot

A semiconductor quantum dot mimics a two-level atom. Performance as a single photon source is limited by decoherence and dephasing of the optical transition. Even with high quality material at low temperature, the optical linewidths are a factor of two larger than the transform-limit. A major contributor to the inhomogeneous linewdith is the nuclear spin noise. We show here that the nuclear spin noise depends on optical excitation, increasing (decreasing) with increasing resonant laser power for the neutral (charged) exciton. Based on this observation, we discover regimes where we demonstrate transform-limited linewidths on both neutral and charged excitons even when the measurement is performed very slowly

Quantum confined Stark effect in a MoS2_2 monolayer van der Waals heterostructure

The optics of dangling-bond-free van der Waals heterostructures containing transition metal dichalcogenides are dominated by excitons. A crucial property of a confined exciton is the quantum confined Stark effect (QCSE). Here, such a heterostructure is used to probe the QCSE by applying a uniform vertical electric field across a molybdenum disulfide (MoS$_2$) monolayer. The photoluminescence emission energies of the neutral and charged excitons shift quadratically with the applied electric field provided the electron density remains constant, demonstrating that the exciton can be polarized. Stark shifts corresponding to about half the homogeneous linewidth were achieved. Neutral and charged exciton polarizabilities of (7.8~\pm~1.0)\times 10^{-10}~\tr{D~m~V}^{-1} and (6.4~\pm~0.9)\times 10^{-10}~\tr{D~m~V}^{-1} at relatively low electron density (8 \times 10^{11}~\tr{cm}^{-2}) have been extracted, respectively. These values are one order of magnitude lower than the previously reported values, but in line with theoretical calculations. The methodology presented here is versatile and can be applied to other semiconducting layered materials as well

GHz bandwidth electro-optics of a single self-assembled quantum dot in a charge-tunable device

The response of a single InGaAs quantum dot, embedded in a miniaturized charge-tunable device, to an applied GHz bandwidth electrical pulse is investigated via its optical response. Quantum dot response times of 1.0 \pm 0.1 ns are characterized via several different measurement techniques, demonstrating GHz bandwidth electrical control. Furthermore a novel optical detection technique based on resonant electron-hole pair generation in the hybridization region is used to map fully the voltage pulse experienced by the quantum dot, showing in this case a simple exponential rise.Comment: 7 pages, 4 figure

Epitaxial lift-off for solid-state cavity quantum electrodynamics

We present a new approach to incorporate self-assembled quantum dots into a Fabry-P\'{e}rot-like microcavity. Thereby a 3$\lambda$/4 GaAs layer containing quantum dots is epitaxially removed and attached by van der Waals bonding to one of the microcavity mirrors. We reach a finesse as high as 4,100 with this configuration limited by the reflectivity of the dielectric mirrors and not by scattering at the semiconductor - mirror interface, demonstrating that the epitaxial lift-off procedure is a promising procedure for cavity quantum electrodynamics in the solid state. As a first step in this direction, we demonstrate a clear cavity-quantum dot interaction in the weak coupling regime with a Purcell factor in the order of 3. Estimations of the coupling strength via the Purcell factor suggests that we are close to the strong coupling regime.Comment: 6 pages, 4 figure

Simple atomic quantum memory suitable for semiconductor quantum dot single photons

Quantum memories matched to single photon sources will form an important cornerstone of future quantum network technology. We demonstrate such a memory in warm Rb vapor with on-demand storage and retrieval, based on electromagnetically induced transparency. With an acceptance bandwidth of $\delta f$ = 0.66~GHz the memory is suitable for single photons emitted by semiconductor quantum dots. In this regime, vapor cell memories offer an excellent compromise between storage efficiency, storage time, noise level, and experimental complexity, and atomic collisions have negligible influence on the optical coherences. Operation of the memory is demonstrated using attenuated laser pulses on the single photon level. For 50 ns storage time we measure $\eta_{\textrm{e2e}}^{\textrm{50ns}} = 3.4(3)\%$ \emph{end-to-end efficiency} of the fiber-coupled memory, with an \emph{total intrinsic efficiency} $\eta_{\textrm{int}} = 17(3)\%$. Straightforward technological improvements can boost the end-to-end-efficiency to $\eta_{\textrm{e2e}} \approx 35\%$; beyond that increasing the optical depth and exploiting the Zeeman substructure of the atoms will allow such a memory to approach near unity efficiency. In the present memory, the unconditional readout noise level of $9\cdot 10^{-3}$ photons is dominated by atomic fluorescence, and for input pulses containing on average $\mu_{1}=0.27(4)$ photons the signal to noise level would be unity

High-detection efficiency and low-timing jitter with amorphous superconducting nanowire single-photon detectors

Recent progress in the development of superconducting nanowire single-photon detectors (SNSPDs) made of amorphous material has delivered excellent performances, and has had a great impact on a range of research fields. Despite showing the highest system detection efficiency (SDE) ever reported with SNSPDs, amorphous materials typically lead to lower critical currents, which impacts on their jitter performance. Combining a very low jitter and a high SDE remains a challenge. Here, we report on highly efficient superconducting nanowire single-photon detectors based on amorphous MoSi, combining system jitters as low as 26 ps and a SDE of 80% at 1550 nm. We also report detailed observations on the jitter behaviour, which hints at intrinsic limitations and leads to practical implications for SNSPD performance