Intrinsic electron spin relaxation due to the D'yakonov-Perel' mechanism in monolayer MoS2_2

Intrinsic electron spin relaxation due to the D'yakonov-Perel' mechanism is studied in monolayer Molybdenum Disulphide. An intervalley in-plane spin relaxation channel is revealed due to the opposite effective magnetic fields perpendicular to the monolayer Molybdenum Disulphide plane in the two valleys together with the intervalley electron-phonon scattering. The intervalley electron-phonon scattering is always in the weak scattering limit, which leads to a rapid decrease of the in-plane spin relaxation time with increasing temperature. A decrease of the in-plane spin relaxation time with the increase of the electron density is also shown.Comment: 6 pages, 1 figur

Electron spin relaxation in bilayer graphene

Electron spin relaxation due to the D'yakonov-Perel' mechanism is investigated in bilayer graphene with only the lowest conduction band being relevant. The spin-orbit coupling is constructed from the symmetry group analysis with the parameters obtained by fitting to the numerical calculation according to the latest report by Konschuh {\it et al.} [Phys. Rev. B {\bf 85}, 115423 (2012)] from first principles. In contrast to single-layer graphene, the leading term of the out-of-plane component of the spin-orbit coupling in bilayer graphene shows a Zeeman-like term with opposite effective magnetic fields in the two valleys. This Zeeman-like term opens a spin relaxation channel in the presence of intervalley scattering. It is shown that the intervalley electron-phonon scattering, which has not been reported in the previous literature, strongly suppresses the in-plane spin relaxation time at high temperature whereas the intervalley short-range scattering plays an important role in the in-plane spin relaxation especially at low temperature. A marked nonmonotonic dependence of the in-plane spin relaxation time on temperature with a minimum of several hundred picoseconds is predicted in the absence of the short-range scatterers. This minimum is comparable to the experimental data. Moreover, a peak in the electron density dependence of the in-plane spin relaxation time at low temperature, which is very different from the one in semiconductors, is predicted. We also find a rapid decrease in the in-plane spin relaxation time with increasing initial spin polarization at low temperature, which is opposite to the situation in both semiconductors and single-layer graphene. ......(The remaining is cut due to the limit of space)Comment: 15 pages, 9 figures, PRB in pres

Singlet-triplet relaxation in SiGe/Si/SiGe double quantum dots

We study the singlet-triplet relaxation due to the spin-orbit coupling assisted by the electron-phonon scattering in two-electron SiGe/Si/SiGe double quantum dots in the presence of an external magnetic field in either Faraday or Voigt configuration. By explicitly including the electron-electron Coulomb interaction and the valley splitting induced by the interface scattering, we employ the exact-diagonalization method to obtain the energy spectra and the eigenstates. Then we calculate the relaxation rates with the Fermi golden rule. We find that the transition rates can be effectively tuned by varying the external magnetic field and the interdot distance. Especially in the vicinity of the anticrossing point, the transition rates show intriguing features. We also investigate the electric-field dependence of the transition rates, and find that the transition rates are almost independent of the electric field. This is of great importance in the spin manipulation since the lifetime remains almost the same during the change of the qubit configuration from $(1,1)$ to $(2,0)$ by the electric field.Comment: 9 pages, 8 figure

Electron spin diffusion in monolayer MoS2_2

Electron spin diffusion is investigated in monolayer MoS$_2$ in the absence of external electric and magnetic fields. The electron-impurity scattering, which is shown to play a negligible role in spin relaxation in time domain in this material, has a marked effect on the in-plane spin diffusion due to the anisotropic spin precession frequency in the spatial domain. With the electron-impurity and inter-valley electron-phonon scatterings separately included in the scattering term, we study the intra- and inter-valley diffusion processes of the in-plane spins by analytically solving the kinetic spin Bloch equations. The intra-valley process is found to be dominant in the in-plane spin diffusion, in contrast to the case of spin relaxation in time domain, where the inter-valley process can be comparable to or even more important than the intra-valley one. For the intra-valley process, we find that the in-plane spin diffusion is suppressed with the increase of impurity density but effectively enhanced by increasing electron density in both the degenerate and nondegenerate limits. We also take into account the electron-electron Coulomb scattering in the intra-valley process. Interestingly, we find that in the nondegenerate limit, the intra-valley spin diffusion length presents an opposite trend in the electron density dependence compared to the one with only electron-impurity scattering.Comment: 6 pages, 1 figur

Topological superconductor with a large Chern number and a large bulk excitation gap in single layer graphene

We show that a two-dimensional topological superconductor (TSC) can be realized in a hybrid system with a conventional $s$-wave superconductor proximity-coupled to a quantum anomalous Hall (QAH) state from the Rashba and exchange effects in single layer graphene. With very low or even zero doping near the Dirac points, i.e., two inequivalent valleys, this TSC has a Chern number as large as four, which supports four Majorana edge modes. More importantly, we show that this TSC has a robust topologically nontrivial bulk excitation gap, which can be larger or even one order of magnitude larger than the proximity-induced superconducting gap. This unique property paves a way for the application of QAH insulators as seed materials to realize robust TSCs and Majorana modes.Comment: 10 pages, 5 figures, PRB in pres

Comment on "Quantum Confinement and Optical Gaps in Si Nanocrystals"

We show that the method used by Ogut, Chelikowsky and Louie (Phys. Rev. Lett. 79, 1770 (1997)) to calculate the optical gap of Si nanocrystals omits an electron-hole polarization energy. When this contribution is taken into account, the corrected optical gap is in excellent agreement with semi-empirical pseudopotential calculations.Comment: 3 pages, 1 figur