Phase switching in a voltage-biased Aharonov-Bohm interferometer

Recent experiment [Sigrist et al., Phys. Rev. Lett. {\bf 98}, 036805 (2007)] reported switches between 0 and $\pi$ in the phase of Aharonov-Bohm oscillations of the two-terminal differential conductance through a two-dot ring with increasing voltage bias. Using a simple model, where one of the dots contains multiple interacting levels, these findings are explained as a result of transport through the interferometer being dominated at different biases by quantum dot levels of different "parity" (i.e. the sign of the overlap integral between the dot state and the states in the leads). The redistribution of electron population between different levels with bias leads to the fact that the number of switching events is not necessarily equal to the number of dot levels, in agreement with experiment. For the same reason switching does not always imply that the parity of levels is strictly alternating. Lastly, it is demonstrated that the correlation between the first switching of the phase and the onset of the inelastic cotunneling, as well as the sharp (rather than gradual) change of phase when switching occurs, give reason to think that the present interpretation of the experiment is preferable to the one based on electrostatic AB effect.Comment: 12 pages, 9 figure

Electron Spin Dynamics in Semiconductors without Inversion Symmetry

We present a microscopic analysis of electron spin dynamics in the presence of an external magnetic field for non-centrosymmetric semiconductors in which the D'yakonov-Perel' spin-orbit interaction is the dominant spin relaxation mechanism. We implement a fully microscopic two-step calculation, in which the relaxation of orbital motion due to electron-bath coupling is the first step and spin relaxation due to spin-orbit coupling is the second step. On this basis, we derive a set of Bloch equations for spin with the relaxation times T_1 and T_2 obtained microscopically. We show that in bulk semiconductors without magnetic field, T_1 = T_2, whereas for a quantum well with a magnetic field applied along the growth direction T_1 = T_2/2 for any magnetic field strength.Comment: to appear in Proceedings of Mesoscopic Superconductivity and Spintronics (MS+S2002

Electron Spin Relaxation in a Semiconductor Quantum Well

A fully microscopic theory of electron spin relaxation by the D'yakonov-Perel' type spin-orbit coupling is developed for a semiconductor quantum well with a magnetic field applied in the growth direction of the well. We derive the Bloch equations for an electron spin in the well and define microscopic expressions for the spin relaxation times. The dependencies of the electron spin relaxation rate on the lowest quantum well subband energy, magnetic field and temperature are analyzed.Comment: Revised version as will appear in Physical Review

Single Molecule Detection of Nanomechanical motion

We investigate theoretically how single molecule spectroscopy techniques can be used to perform fast and high resolution displacement detection and manipulation of nanomechanical oscillators, such as singly clamped carbon nanotubes. We analyze the possibility of real time displacement detection by the luminescence signal and of displacement fluctuations by the degree of second order coherence. Estimates of the electromechanical coupling constant indicate that intriguing regimes of strong backaction between the two-level system of a molecule and the oscillator can be realized