3 research outputs found

    Investigation of the Effect of Process Parameters by Taguchi Method on Structural and Electrical Properties of RF Magnetron Sputtered SiO2 & pSi on Si Substrate

    Get PDF
    In this work, Taguchi Signal-to-noise (S/N) analysis was applied to investigate the effect of varying three process parameters, namely- sputtering power, working pressure and Ar gas flow rate on the surface, morphological and electrical properties of the RF sputtered SiO2 and Boron doped pSi over Si substrate. The contribution of a particular process parameter on these properties was also inspected by applying Analysis of Variance (ANOVA). SiO2 and pSi thin films were fabricated over Si substrate using RF magnetron sputtering system. Three sets of inputs for the three mentioned process parameters were chosen for sputtering SiO2 and pSi thin films. To deposit SiO2, 150W, 200W and 250W power levels were chosen, for pSi deposition- power levels were 100W, 150W and 200W; 5mTorr, 10mTorr and 15mTorr were chosen for pressure and three Ar gas flow rate levels at 5, 10 and 15 sccm were selected. By performing Taguchi L9 orthogonal array, nine combinations of sputtering parameters were prepared for depositing SiO2/Si and pSi/Si thin films. The surface morphological and electrical properties (resistivity per unit area and capacitance per unit area) of the sputtered samples were therefore inspected by analyzing the Taguchi design of experiment. Signal-to-noise (S/R) analysis presents how the properties were affected by the variation of each process parameter. ANOVA analysis showed that sputtering power and working pressure are the two dominant process parameters contributing more to surface morphological and electrical properties. A regression model for surface roughness of the SiO2/Si and pSi/Si thin film samples was also derived. The electrical properties of the SiO2/Si and pSi/Si thin films, however, didn’t show linearity and that is why it was not possible to derive a regression model for the electrical properties of SiO2/Si and pSi/Si sputtered thin films

    Investigation of the Effect and Contribution of Process Parameters By Taguchi and ANOVA Analysis on the Morphological and Electrical Properties of RF Magnetron Sputtered SiO2 Over Si Substrate

    Get PDF
    In this work, we applied Taguchi Signal-to-noise (S/N) analysis to investigate the effect of varying three process parameters, namely — sputtering power, working pressure and Ar gas flow rate on the surface, morphological and electrical properties of the RF sputtered SiO2 over Si substrate. We also inspected the contribution of a particular process parameter on these properties by applying Analysis of Variance (ANOVA). SiO2 thin films were fabricated over Si substrate using RF magnetron sputtering system. Three sets of inputs for the three mentioned process parameters were chosen; for power, we chose 100W, 150W and 200W; 5mTorr, 10mTorr and 15mTorr were chosen for pressure and three Ar gas flow rate levels at 5, 10 and 15 sccm were selected. By performing Taguchi L9 orthogonal array, nine combinations of sputtering parameters were prepared for depositing SiO2/Si Thin films. The surface morphological and electrical properties (resistivity per unit area and capacitance per unit area) of the sputtered samples were therefore inspected by analyzing the Taguchi design of experiment. Signal-to-noise (S/R) analysis presents how the properties were affected by the variation of each process parameter. ANOVA analysis showed that sputtering power and working pressure are the two dominant process parameters contributing more to surface morphological and electrical properties. A regression model for surface roughness of the SiO2/Si thin film samples was also derived. The electrical properties of the SiO2/Si thin films, however, didn’t show linear properties

    Investigating the Effect of Process Parameter on the Properties of Rf Sputtered pSi Thin Film by Taguchi and ANOVA Analysis

    No full text
    Boron doped pSi was deposited on Si substrate in the RF magnetron sputtering system by varying three process parameters, namely-sputtering power, working pressure, and Ar gas flow rate. Subsequently, the effect of these process parameter changes on the surface (roughness, morphology), structural (crystallography, grain size, micro-stress), and electrical (resistance and capacitance per unit area) properties were investigated using Taguchi Signal-to-noise (S/N) analysis and Analysis of Variance (ANOVA). Three sets of inputs for the three mentioned process parameters were chosen to sputter the thin films. The levels were: for power- 100, 150 & 200 Watts, for pressure- 10, 15 & 20 mTorr, and for Ar flow rate- 5, 10 & 15 sccm. By performing Taguchi L9 orthogonal array, nine samples of pSi thin films were fabricated. Signal to noise ratio (S/N) tells how a particular property is affected by the process parameters variation, while ANOVA statistical analysis determines the contributions of each process parameter on the change of that particular property. Our experimental result showed that sputtering power plays the most influential role in the properties of pSi thin films among the three chosen parameters. The impact of working pressure is also very significant. Ar gas flow rate, on the other hand, has minimal effect on the thin film properties
    corecore