29 research outputs found

    Hard Label Black Box Node Injection Attack on Graph Neural Networks

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    While graph neural networks have achieved state-of-the-art performances in many real-world tasks including graph classification and node classification, recent works have demonstrated they are also extremely vulnerable to adversarial attacks. Most previous works have focused on attacking node classification networks under impractical white-box scenarios. In this work, we will propose a non-targeted Hard Label Black Box Node Injection Attack on Graph Neural Networks, which to the best of our knowledge, is the first of its kind. Under this setting, more real world tasks can be studied because our attack assumes no prior knowledge about (1): the model architecture of the GNN we are attacking; (2): the model's gradients; (3): the output logits of the target GNN model. Our attack is based on an existing edge perturbation attack, from which we restrict the optimization process to formulate a node injection attack. In the work, we will evaluate the performance of the attack using three datasets, COIL-DEL, IMDB-BINARY, and NCI1

    ProcData: An R Package for Process Data Analysis

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    Process data refer to data recorded in the log files of computer-based items. These data, represented as timestamped action sequences, keep track of respondents' response processes of solving the items. Process data analysis aims at enhancing educational assessment accuracy and serving other assessment purposes by utilizing the rich information contained in response processes. The R package ProcData presented in this article is designed to provide tools for processing, describing, and analyzing process data. We define an S3 class "proc" for organizing process data and extend generic methods summary and print for class "proc". Two feature extraction methods for process data are implemented in the package for compressing information in the irregular response processes into regular numeric vectors. ProcData also provides functions for fitting and making predictions from a neural-network-based sequence model. These functions call relevant functions in package keras for constructing and training neural networks. In addition, several response process generators and a real dataset of response processes of the climate control item in the 2012 Programme for International Student Assessment are included in the package

    Contextualizing legal norms: a multi-dimensional view of the 2014 legal capital reform in China

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    This paper intends to shed light on the contentious theme of the reception of legal transplantation in the host environment, by examining the 2014 legislative reform of legal capital in China, which at least on paper imitates the enabling settings of US Revised Model Business Corporation Act (RMBCA). The paper looks at the interconnections between national-specific contextual elements, the resultant complexities, and the spillover effects of transplanted configurations in the unique Chinese socio-cultural setting, implicating the discrepancy between the ‘law in practice’ and the borrowed words ‘on the books’, and suggesting the importance of gaining a holistic understanding of ‘law’ involving the legal traditions in both the donor country and the recipient nation

    High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation

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    Abstract We report the amorphous Si passivation of Ge pMOSFETs fabricated on (001)-, (011)-, and (111)-orientated surfaces for advanced CMOS and thin film transistor applications. Amorphous Si passivation of Ge is carried out by magnetron sputtering at room temperature. With the fixed thickness of Si t Si, (001)-oriented Ge pMOSFETs achieve the higher on-state current I ON and effective hole mobility μ eff compared to the devices on other orientations. At an inversion charge density Q inv of 3.5 × 1012 cm−2, Ge(001) transistors with 0.9 nm t Si demonstrate a peak μ eff of 278 cm2/V × s, which is 2.97 times higher than the Si universal mobility. With the decreasing of t Si, I ON of Ge transistors increases due to the reduction of capacitive effective thickness, but subthreshold swing and leakage floor characteristics are degraded attributed to the increasing of midgap D it
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