Impact of Metal Salt Precursor on Low-Temperature Annealed Solution-Derived Ga-doped In₂O₃ Semiconductor for Thin-Film Transistors

Sol–gel-derived oxide semiconductors annealed at a low temperature have been of great interest recently in various thin-film transistor (TFT) applications. However, studies on the influence of metal salt precursor on sol–gel-derived oxide semiconductor annealed at a low temperature have not yet been reported. In this study, the impact of metal salt precursor on the chemical structure evolution of Ga-doped In2O3 (IGO) semiconductor and electrical performance of thin-film transistors with a corresponding oxide semiconductor is investigated. X-ray photoelectron spectroscopy (XPS)-based chemical structure analysis is carried out in conjunction with an understanding of the electrical performance of device. It is revealed that in addition to the thermally enhanced evolution of metal oxide chemical structure, the impurities due to the incomplete thermal decomposition of metal salt precursor do not only hinder the formation of metal oxide lattice, resulting in an electrically inactive oxide semiconductor, but also significantly deteriorate the electrical performance, such as field-effect mobility, subthreshold swing, and on/off current ratio, of thin-film transistor

Flashlight-Induced Strong Self-Adhesive Surface on a Nanowire-Impregnated Transparent Conductive Film

The flashlight annealing process has been widely used in the field of flexible and printed electronics because it can instantly induce chemical and structural modifications over a large area on an electronic functional layer in a subsecond time range. In this study, for the first time, we explored a straightforward method to develop strong self-adhesion on a metal nanowire-based flexible and transparent conductive film via flashlight irradiation. Nanowire interlocking, for strong mechanical bonding at the interface between the nanowires and polyamide film, was achieved by simple hot pressing. Then, by irradiating the nanowire-impregnated film with a flashlight, several events such as interdiffusion and melting of surface polymers could be induced along with morphological changes leading to an increase in the film surface area. As a result, the surface of the fabricated film exhibited strong interfacial interactions while forming intimate contact with the heterogeneous surfaces of other objects, thereby becoming strongly self-adhesive. This readily achievable, self-attachable, flexible, and transparent electrode allowed the self-interconnection of a light-emitting diode chip, and it was also compatible for various applications, such as defogging windows and transparent organic light-emitting diodes

Salami-like Electrospun Si Nanoparticle-ITO Composite Nanofibers with Internal Conductive Pathways for use as Anodes for Li-Ion Batteries

We report novel salami-like core–sheath composites consisting of Si nanoparticle assemblies coated with indium tin oxide (ITO) sheath layers that are synthesized via coelectrospinning. Core–sheath structured Si nanoparticles (NPs) in static ITO allow robust microstructures to accommodate for mechanical stress induced by the repeated cyclical volume changes of Si NPs. Conductive ITO sheaths can provide bulk conduction paths for electrons. Distinct Si NP-based core structures, in which the ITO phase coexists uniformly with electrochemically active Si NPs, are capable of facilitating rapid charge transfer as well. These engineered composites enabled the production of high-performance anodes with an excellent capacity retention of 95.5% (677 and 1523 mAh g^–1, which are based on the total weight of Si-ITO fibers and Si NPs only, respectively), and an outstanding rate capability with a retention of 75.3% from 1 to 12 C. The cycling performance and rate capability of core–sheath-structured Si NP-ITO are characterized in terms of charge-transfer kinetics

Bandgap-Graded Cu₂Zn(Sn_1–<i>x</i>Ge_<i>x</i>)S₄ Thin-Film Solar Cells Derived from Metal Chalcogenide Complex Ligand Capped Nanocrystals

We demonstrate organic residue free, bandgap-graded Cu₂Zn­(Sn_1–<i>x</i>Ge_<i>x</i>)­S₄ (CZTGeS) thin-film solar cells based on metal chalcogenide complex (MCC) ligand capped nanocrystals (NCs). The bandgap of the CZTGeS films is tuned by varying the amount of Sn₂S₆^4– MCC ligand absorbed on the surface of the Cu₂ZnGeS₄ (CZGeS) NCs, without an undesirable postselenization process. Using CZGeS NCs inks with three different Sn/(Ge+Sn) ratios, bandgap-graded CZTGeS thin films are obtained via multicoating and annealing procedures. Compositional and spectroscopic analyses along the film thickness confirm that the band-graded CZTGeS absorber layer, with a gradually increasing bandgap from the back contact to the <i>p</i>–<i>n</i> junction, is successfully accomplished. Compared with an ungraded band structured CZTGeS cell, this normal grading structure facilitates both higher short circuit current and open-circuit voltage, facilitating a power conversion efficiency of 6.3%

CuInSe₂ (CIS) Thin Film Solar Cells by Direct Coating and Selenization of Solution Precursors

CuInSe2 (CIS) absorber layer was formed by a direct nonvacuum coating and a subsequent selenization of precursor solutions of Cu(NO3)2 and InCl3 dissolved in methanol. The viscosity of precursor solutions was adjusted by adding ethyl-cellulose (EC) to be suitable for the doctor-blade coating. During the coating and drying process Cu2+ ions in the starting solution were reduced to Cu+, resulting in precursor films consisting of CuCl crystals and amorphous In compound embedded in EC matrix. Selenization of the precursor films with Se vapor at elevated temperature generated double-layered films with an upper layer of chalcopyrite CIS and a carbon residue bottom layer. Significant In loss was observed during the selenization, which was attributed to the evaporation of the In2Se binary phase, confirmed by investigating the change in the Cu/In ratio of the selenized film as a function of Se flux and substrate temperature. As a proof-of-concept, thin film solar cells were fabricated with the double-layered absorber film and the devices exhibited reproducible conversion efficiency as high as about 2%

Printable Thick Copper Conductors from Optically Modulated Multidimensional Particle Mixtures

Printing techniques that enable the formation of arbitrarily designed architectures have been implemented in various research fields owing to their characteristic advantages in processing over other techniques. In particular, low-cost, printable conductors are of paramount importance in the production of highly functioning printed electronics. Among various candidates, copper (Cu) particle-based printable fluid has been regarded as the most promising constituent material in conjunction with the use of the flash-light-sintering (FLS) process in air. In this study, we synthesized surface-oxidation-suppressed Cu nanoparticles, sub-micronparticles, and flakes to regulate the optical absorption characteristics in FLS-processed, Cu-based printed conductors. Our results revealed clearly that the critical issues in FLS-processed conductors, namely, undesirable crack formation and a limitation of thickness, are resolved by adjusting the optical behaviors of particulate layers by variation of the composition of multidimensional mixture particles. It is suggested that crack-free, 13.2 μm thick printed Cu conductors can be generated with a resistivity of 11.4 μΩ cm by printing and FLS processes in air. The proposed alternative approach is demonstrated with electrical circuits comprising electrodes and interconnections

Three-Dimensional Multistack-Printed, Self-Powered Flexible Pressure Sensor Arrays: Piezoelectric Composites with Chemically Anchored Heterogeneous Interfaces

Recently, the development of pressure sensor devices composed of mechanically flexible materials has gained a tremendous attention for emerging wearable electronics applications. Compared with various sensing materials, piezoelectric composite materials provide a characteristic advantage of enabling energy unit-free integration of sensor compartments. In this study, we develop a new chemical method of synthesizing highly functioning piezoelectric composite materials with electrostatically reinforced heterogeneous interfaces to improve the voltage output signal in all-printed sensor arrays. The surfaces of piezoelectric oxide nanoparticles are decorated subsequently with a cationic polyelectrolyte, polyethyleneimine, and a tri-block copolymer, styrene–ethylene/butylene–styrene grafted with maleic anhydride. To elucidate the factors determining the performance of pressure sensor devices, both the electrical properties and piezoelectric characteristics are investigated comprehensively for various compositional composite materials prepared from chemical and physical rubbers. The resulting device exhibits a sensitivity of 0.28 V·kPa–1 with a linear increment of output voltage in a pressure range up to 30 kPa. It is also demonstrated that the all-printed sensor array is fabricated successfully by a multistack-printing process of conductive, insulating, and piezoelectric composite materials in an additive manufacturing fashion

Flexible Low-Voltage Organic Thin-Film Transistors Enabled by Low-Temperature, Ambient Solution-Processable Inorganic/Organic Hybrid Gate Dielectrics

We report here on the design, synthesis, processing, and dielectric properties of novel cross-linked inorganic/organic hybrid blend (CHB) dielectric films which enable low-voltage organic thin-film transistor (OTFT) operation. CHB thin films (20−43 nm thick) are readily fabricated by spin-coating a zirconium chloride precursor plus an α,ω-disilylalkane cross-linker solution in ambient conditions, followed by curing at low temperatures (∼150 °C). The very smooth CHB dielectrics exhibit excellent insulating properties (leakage current densities ∼10−7 A/cm2), tunable capacitance (95−365 nF/cm2), and high dielectric constants (5.0−10.2). OTFTs fabricated with pentacene as the organic semiconductor function well at low voltages (<−4.0 V). The morphologies and microstructures of representative semiconductor films grown on CHB dielectrics prepared with incrementally varied compositions and processing conditions are investigated and shown to correlate closely with the OTFT response

Flashlight-Induced Strong Self-Adhesive Surface on a Nanowire-Impregnated Transparent Conductive Film

The flashlight annealing process has been widely used in the field of flexible and printed electronics because it can instantly induce chemical and structural modifications over a large area on an electronic functional layer in a subsecond time range. In this study, for the first time, we explored a straightforward method to develop strong self-adhesion on a metal nanowire-based flexible and transparent conductive film via flashlight irradiation. Nanowire interlocking, for strong mechanical bonding at the interface between the nanowires and polyamide film, was achieved by simple hot pressing. Then, by irradiating the nanowire-impregnated film with a flashlight, several events such as interdiffusion and melting of surface polymers could be induced along with morphological changes leading to an increase in the film surface area. As a result, the surface of the fabricated film exhibited strong interfacial interactions while forming intimate contact with the heterogeneous surfaces of other objects, thereby becoming strongly self-adhesive. This readily achievable, self-attachable, flexible, and transparent electrode allowed the self-interconnection of a light-emitting diode chip, and it was also compatible for various applications, such as defogging windows and transparent organic light-emitting diodes