Analysis of Time-Varying, Stochastic Gas Transport through Graphene Membranes

Molecular transport measurements through isolated nanopores can greatly inform our understanding of how such systems can select for molecular size and shape. In this work, we present a detailed analysis of experimental gas permeation data through single layer graphene membranes under batch depletion conditions parametric in starting pressure for He, H₂, Ne, and CO₂ between 100 and 670 kPa. We show mathematically that the observed intersections of the membrane deflection curves parametric in starting pressure are indicative of a time dependent membrane permeance (pressure normalized molecular flow). Analyzing these time dependent permeance data for He, Ne, H₂, and CO₂ shows remarkably that the latter three gases exhibit discretized permeance values that are temporally repeated. Such quantized fluctuations (called “gating” for liquid phase nanopore and ion channel systems) are a hallmark of isolated nanopores, since small, but rapid changes in the transport pathway necessarily influence a single detectable flux. We analyze the fluctuations using a Hidden Markov model to fit to discrete states and estimate the activation barrier for switching at 1.0 eV. This barrier is and the relative fluxes are consistent with a chemical bond rearrangement of an 8–10 atom vacancy pore. Furthermore, we use the relations between the states given by the Markov network for few pores to determine that three pores, each exhibiting two state switching, are responsible for the observed fluctuations; and we compare simulated control data sets with and without the Markov network for comparison and to establish confidence in our evaluation of the limited experimental data set

Ultrathin Oxide Films by Atomic Layer Deposition on Graphene

In this paper, a method is presented to create and characterize mechanically robust, free-standing, ultrathin, oxide films with controlled, nanometer-scale thickness using atomic layer deposition (ALD) on graphene. Aluminum oxide films were deposited onto suspended graphene membranes using ALD. Subsequent etching of the graphene left pure aluminum oxide films only a few atoms in thickness. A pressurized blister test was used to determine that these ultrathin films have a Young’s modulus of 154 ± 13 GPa. This Young’s modulus is comparable to much thicker alumina ALD films. This behavior indicates that these ultrathin two-dimensional films have excellent mechanical integrity. The films are also impermeable to standard gases suggesting they are pinhole-free. These continuous ultrathin films are expected to enable new applications in fields such as thin film coatings, membranes, and flexible electronics

Nanometer Thick Elastic Graphene Engine

Significant progress has been made in the construction and theoretical understanding of molecular motors because of their potential use. Here, we have demonstrated fabrication of a simple but powerful 1 nm thick graphene engine. The engine comprises a high elastic membrane-piston made of graphene and weakly chemisorbed ClF₃ molecules as the high power volume changeable actuator, while a 532 nm LASER acts as the ignition plug. Rapid volume expansion of the ClF₃ molecules leads to graphene blisters. The size of the blister is controllable by changing the ignition parameters. The estimated internal pressure per expansion cycle of the engine is about ∼10⁶ Pa. The graphene engine presented here shows exceptional reliability, showing no degradation after 10 000 cycles

Electron Doping of Ultrathin Black Phosphorus with Cu Adatoms

Few-layer black phosphorus is a monatomic two-dimensional crystal with a direct band gap that has high carrier mobility for both holes and electrons. Similarly to other layered atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is sensitive to surface impurities, adsorbates, and adatoms. Here we study the effect of Cu adatoms onto few-layer black phosphorus by characterizing few-layer black phosphorus field effect devices and by performing first-principles calculations. We find that the addition of Cu adatoms can be used to controllably n-dope few layer black phosphorus, thereby lowering the threshold voltage for n-type conduction without degrading the transport properties. We demonstrate a scalable 2D material-based complementary inverter which utilizes a boron nitride gate dielectric, a graphite gate, and a single bP crystal for both the p- and n-channels. The inverter operates at matched input and output voltages, exhibits a gain of 46, and does not require different contact metals or local electrostatic gating

Colossal Ultraviolet Photoresponsivity of Few-Layer Black Phosphorus

Black phosphorus has an orthorhombic layered structure with a layer-dependent direct band gap from monolayer to bulk, making this material an emerging material for photodetection. Inspired by this and the recent excitement over this material, we studied the optoelectronics characteristics of high-quality, few-layer black phosphorus-based photodetectors over a wide spectrum ranging from near-ultraviolet (UV) to near-infrared (NIR). It is demonstrated for the first time that black phosphorus can be configured as an excellent UV photodetector with a specific detectivity ∼3 × 10¹³ Jones. More critically, we found that the UV photoresponsivity can be significantly enhanced to ∼9 × 10⁴ A W^–1 by applying a source-drain bias (<i>V</i>_SD) of 3 V, which is the highest ever measured in any 2D material and 10⁷ times higher than the previously reported value for black phosphorus. We attribute such a colossal UV photoresponsivity to the resonant-interband transition between two specially nested valence and conduction bands. These nested bands provide an unusually high density of states for highly efficient UV absorption due to the singularity of their nature