1 research outputs found
Highly Sensitive Electromechanical Piezoresistive Pressure Sensors Based on Large-Area Layered PtSe<sub>2</sub> Films
Two-dimensional
(2D) layered materials are ideal for micro- and
nanoelectromechanical systems (MEMS/NEMS) due to their ultimate thinness.
Platinum diselenide (PtSe<sub>2</sub>), an exciting and unexplored
2D transition metal dichalcogenide material, is particularly interesting
because its low temperature growth process is scalable and compatible
with silicon technology. Here, we report the potential of thin PtSe<sub>2</sub> films as electromechanical piezoresistive sensors. All experiments
have been conducted with semimetallic PtSe<sub>2</sub> films grown
by thermally assisted conversion of platinum at a complementary metal–oxide–semiconductor
(CMOS)-compatible temperature of 400 °C. We report high negative
gauge factors of up to −85 obtained experimentally from PtSe<sub>2</sub> strain gauges in a bending cantilever beam setup. Integrated
NEMS piezoresistive pressure sensors with freestanding PMMA/PtSe<sub>2</sub> membranes confirm the negative gauge factor and exhibit very
high sensitivity, outperforming previously reported values by orders
of magnitude. We employ density functional theory calculations to
understand the origin of the measured negative gauge factor. Our results
suggest PtSe<sub>2</sub> as a very promising candidate for future
NEMS applications, including integration into CMOS production lines