Proposed cavity Josephson plasmonics with complex-oxide heterostructures

We discuss how complex-oxide heterostructures that include high-Tc superconducting cuprates can be used to realize an array of sub-millimeter cavities that support Josephson plasmon polaritons. These cavities have several attractive features for new types of light matter interaction studies and we show that they promote "ultrastrong" coupling between THz frequency radiation and Josephson plasmons. Cavity electrodynamics of Josephson plasmons allows to manipulate the superconducting order-parameter phase coherence. As an example, we discuss how it could be used to cool superconducting phase fluctuations with light

Probing Quantum Confinement and Electronic Structure at Polar Oxide Interfaces

Polar discontinuities occurring at interfaces between two different materials constitute both a challenge and an opportunity in the study and application of a variety of devices. In order to cure the large electric field occurring in such structures, a reconfiguration of the charge landscape sets in at the interface via chemical modifications, adsorbates or charge transfer. In the latter case, one may expect a local electronic doping of one material: one sparkling example is the two-dimensional electron liquid (2DEL) appearing in SrTiO$_3$ once covered by a polar LaAlO$_3$ layer. Here we show that tuning the formal polarisation of a (La,Al)$_{1-x}$(Sr,Ti)$_x$O$_3$ (LASTO:$x$) overlayer through chemical composition modifies the quantum confinement of the 2DEL in SrTiO$_3$ and its electronic band structure. The analysis of the behaviour in magnetic field of superconducting field-effect devices reveals, in agreement with $ab\ initio$ calculations and self-consistent Poisson-Schr\"odinger modelling, that quantum confinement and energy splitting between electronic bands of different symmetries strongly depend on interface charge densities. These results not only strongly support the polar discontinuity mechanisms with a full charge transfer to explain the origin of the 2DEL at the celebrated LaAlO$_3$/SrTiO$_3$ interface, but also demonstrate an effective tool for tailoring the electronic structure at oxide interfaces.Comment: 18 pages, 4 figures, 1 ancillary file (Supporting Information

Epitaxial PZT films for MEMS printing applications

Films of piezoelectric and ferroelectric oxides have been widely investigated for various applications, including microelectromechanical systems (MEMS) for printing. Pb(Zr,Ti)O3 is of particular interest due to its excellent piezoelectric properties. Control of the density, crystalline orientation, and compositional uniformity is essential to obtain these properties. In this article, we review recent progress on the fabrication of epitaxial Pb(Zr,Ti)O3films, in which the aforementioned control can be achieved. We discuss the different approaches used for the deposition of the epitaxial piezoelectric layer as well as the achieved degrees of the epitaxy. Furthermore, the integration of these piezoelectric layers in MEMS and the corresponding performance are discusse

High sensitivity variable-temperature infrared nanoscopy of conducting oxide interfaces

Probing the local transport properties of two-dimensional electron systems (2DES) confined at buried interfaces requires a non-invasive technique with a high spatial resolution operating in a broad temperature range. In this paper, we investigate the scattering-type scanning near field optical microscopy as a tool for studying the conducting LaAlO3/SrTiO3 interface from room temperature down to 6 K. We show that the near-field optical signal, in particular its phase component, is highly sensitive to the transport properties of the electron system present at the interface. Our modelling reveals that such sensitivity originates from the interaction of the AFM tip with coupled plasmon-phonon modes with a small penetration depth. The model allows us to quantitatively correlate changes in the optical signal with the variation of the 2DES transport properties induced by cooling and by electrostatic gating. To probe the spatial resolution of the technique, we image conducting nano-channels written in insulating heterostructures with a voltage-biased tip of an atomic force microscope.Comment: 19 pages, 5 figure

Fabricating Superconducting Interfaces between Artificially-Grown LaAlO3_3 and SrTiO3_3 Thin Films

Realization of a fully metallic two-dimensional electron gas at the interface between artificially-grown LaAlO$_3$ and SrTiO$_3$ thin films has been an exciting challenge. Here we present for the first time the successful realization of a superconducting 2DEG at interfaces between artificially-grown LaAlO$_3$ and SrTiO$_3$ thin films. Our results highlight the importance of two factors-the growth temperature and the SrTiO$_3$ termination. We use local friction force microscopy and transport measurements to determine that in normal growth conditions the absence of a robust metallic state at low temperature in the artificially-grown LaAlO$_3$/SrTiO$_3$ interface is due to the nanoscale SrO segregation occurring on the SrTiO$_3$ film surface during the growth and the associated defects in the SrTiO$_3$ film. By adopting an extremely high SrTiO$_3$ growth temperature, we demonstrate a way to realize metallic, down to the lowest temperature, and superconducting 2DEG at interfaces between LaAlO$_3$ layers and artificially-grown SrTiO$_3$ thin films. This study paves the way to the realization of functional LaAlO$_3$/SrTiO$_3$ superlattices and/or artificial LaAlO$_3$/SrTiO$_3$ interfaces on other substrates

Artificial quantum confinement in LAO3/STO heterostructure

Heterostructures of transition metal oxides (TMO) perovskites represent an ideal platform to explore exotic phenomena involving the complex interplay between the spin, charge, orbital and lattice degrees of freedom available in these compounds. At the interface between such materials, this interplay can lead to phenomena that are present in none of the original constituents such as the formation of the interfacial 2D electron system (2DES) discovered at the LAO3/STO3 (LAO/STO) interface. In samples prepared by growing a LAO layer onto a STO substrate, the 2DES is confined in a band bending potential well, whose width is set by the interface charge density and the STO dielectric properties, and determines the electronic band structure. Growing LAO (2 nm) /STO (x nm)/LAO (2 nm) heterostructures on STO substrates allows us to control the extension of the confining potential of the top 2DES via the thickness of the STO layer. In such samples, we explore the dependence of the electronic structure on the width of the confining potential using soft X-ray ARPES combined with ab-initio calculations. The results indicate that varying the thickness of the STO film modifies the quantization of the 3d t2g bands and, interestingly, redistributes the charge between the dxy and dxz/dyz bands

Optically probing the detection mechanism in a molybdenum silicide superconducting nanowire single-photon detector

We experimentally investigate the detection mechanism in a meandered molybdenum silicide superconducting nanowire single-photon detector by characterising the detection probability as a function of bias current in the wavelength range of 750–2050 Onm. Contrary to some previous observations on niobium nitride or tungsten silicide detectors, we find that the energy-current relation is nonlinear in this range. Furthermore, thanks to the presence of a saturated detection efficiency over the whole range of wavelengths, we precisely quantify the shape of the curves. This allows a detailed study of their features, which are indicative of both Fano fluctuations and position-dependent effects

Anomalous T-dependence of phonon lifetimes in metallic VO2

We investigate phonon lifetimes in VO2 single crystals. We do so in the metallic state above the metal-insulator transition (MIT), where strong structural fluctuations are known to take place. By combining inelastic X-ray scattering and Raman spectroscopy, we track the temperature dependence of several acoustic and optical phonon modes up to 1000 K. Contrary to what is commonly observed, we find that phonon lifetimes decrease with decreasing temperature. Our results show that pre-transitional fluctuations in the metallic state give rise to strong electron-phonon scattering that onsets hundreds of degrees above the transition and increases as the MIT is approached. Notably, this effect is not limited to specific points of reciprocal space that could be associated with the structural transition