Spin-Dependent Destructive and Constructive Quantum Interference Associated with Chirality-Induced Spin Selectivity in Single Circular Helix Molecules

Chirality-induced spin selectivity (CISS) effect in straight helical molecules has received intense studies in past decade; however, the CISS effect in circular helical molecules (CHMs) has still rarely been explored. Here, we have constructed single CHMs having chirality-induced spin–orbit coupling (SOC) and connected by two nonmagnetic leads and successfully gained the required conditions for CISS effect occurring in CHMs for the first time. Our results uncover that only when the CHMs form a closed loop and when the lattice positions are coupled asymmetrically with both leads does the CISS effect occur. More importantly, the CISS-associated spin-dependent destructive and constructive quantum interference (QI) together with their phase transition appears in CHMs. The combination of CISS effect and spin-dependent QI phenomena opens up a new door to understand the underlying physics of the CISS effect in helical molecules

Expression of GFP gene in transgenic <i>Drosophila</i> by RT-PCR.

<p>Three independent lines for each promoter were assayed. The constitutive ribosomal protein 49 gene (<i>rp49</i>) in <i>D. melanogaster</i> was examined as an endogenous control. N  =  negative control.</p

Variation in reporter gene (GFP) expression among transgenic <i>Drosophila melanogaster</i> lines.

<p>Relative expression levels of GFP were normalized to the expression of ribosomal protein 49 (<b><i>rp49</i></b>). Expression folds are calculated by comparison to line Vg1aL3, which had the lowest detectable GFP expression. Error bars represent standard errors. Letters represent statistical differences.</p

Schematic illustration of putative of regulatory elements in the promoter regions of the four <i>Culex tarsalis</i> vitellogenin genes.

<p>Schematic illustration of putative of regulatory elements in the promoter regions of the four <i>Culex tarsalis</i> vitellogenin genes.</p

PCR primers list.

<p>PCR primers list.</p

Electrode Doping and Dielectric Effect in Hole Injection into Organic Semiconductors through High Work-Function Oxides

High work-function metal oxides are common for enhancing hole injection into organic semiconductors. However, the current understanding of the electrostatic mechanism needs to be more consistent with materials’ electronic properties. Here, we study the electrostatic profile of high work-function oxides by considering their dielectricity and energetic disorder. Using MoO3 as an example, we first show that the significant vacuum-level change at the electrode–oxide interface originates from electrode doping rather than the conventionally assumed interface dipole. Moreover, electrode doping is enough to explain the Fermi-level shift, so MoO3’s characteristic n-type property is not necessarily due to intrinsic donors. This conclusion also applies to the n-type oxides with reduced work functions, like WO3, V2O5, and p-type NiO. Finally, the dielectricity of the oxide, either n-type or p-type, reduces the surface p-doping of the further deposited organic layer. Increasing the oxide’s metallicity and energetic disorder facilitates the hole injection

Correction to “Electrode Doping and Dielectric Effect in Hole Injection into Organic Semiconductors through High Work-Function Oxides”

Correction to “Electrode Doping and Dielectric Effect in Hole Injection into Organic Semiconductors through High Work-Function Oxides

Image_1_Prenatal ultrasound diagnosis and prognosis of fetus with isolated filar cyst: a retrospective analysis.JPEG

ObjectiveThis study aimed to investigate the prenatal ultrasonographic diagnosis and prognosis of fetuses with isolated filar cysts (FCs).MethodsThe ultrasonographic features, reasons for missed diagnosis, and prognosis of eight isolated FCs diagnosed using ultrasound were analyzed retrospectively through follow-up.ResultsEight isolated FCs showed round or fusiform cystic anechoic areas at the end of the conus medullaris. Among them, six cases were prenatally diagnosed and the other two cases were diagnosed after birth. Of the six cases diagnosed prenatally, four (66.7%) disappeared during pregnancy, and the shortest time to disappearance was 1 month after the first diagnosis. All patients were followed up without any clinical symptoms or functional abnormalities.ConclusionIsolated FCs may exhibit physiological variations that disappear spontaneously during pregnancy and usually have no clinical symptoms. They are usually benign and have a good prognosis. Ultrasonography is helpful for the diagnosis and follow-up of FCs.</p

Electrode Doping and Dielectric Effect in Hole Injection into Organic Semiconductors through High Work-Function Oxides

High work-function metal oxides are common for enhancing hole injection into organic semiconductors. However, the current understanding of the electrostatic mechanism needs to be more consistent with materials’ electronic properties. Here, we study the electrostatic profile of high work-function oxides by considering their dielectricity and energetic disorder. Using MoO3 as an example, we first show that the significant vacuum-level change at the electrode–oxide interface originates from electrode doping rather than the conventionally assumed interface dipole. Moreover, electrode doping is enough to explain the Fermi-level shift, so MoO3’s characteristic n-type property is not necessarily due to intrinsic donors. This conclusion also applies to the n-type oxides with reduced work functions, like WO3, V2O5, and p-type NiO. Finally, the dielectricity of the oxide, either n-type or p-type, reduces the surface p-doping of the further deposited organic layer. Increasing the oxide’s metallicity and energetic disorder facilitates the hole injection