Non-Gaussian statistics, maxwellian derivation and stellar polytropes

In this letter we discuss the Non-gaussian statistics considering two aspects. In the first, we show that the Maxwell's first derivation of the stationary distribution function for a dilute gas can be extended in the context of Kaniadakis statistics. The second one, by investigating the stellar system, we study the Kaniadakis analytical relation between the entropic parameter $\kappa$ and stellar polytrope index $n$. We compare also the Kaniadakis relation $n=n(\kappa)$ with $n=n(q)$ proposed in the Tsallis framework.Comment: 10 pages, 1 figur

On the rotation of ONC stars in the Tsallis formalism context

The theoretical distribution function of the projected rotational velocity is derived in the context of the Tsallis formalism. The distribution is used to estimate the average for a stellar sample from the Orion Nebula Cloud (ONC), producing an excellent result when compared with observational data. In addition, the value of the parameter q obtained from the distribution of observed rotations reinforces the idea that there is a relation between this parameter and the age of the cluster.Comment: 6 pages, 2 figure

Adatoms in graphene as a source of current polarization: Role of the local magnetic moment

We theoretically investigate spin-resolved currents flowing in large-area graphene, with and without defects, doped with single atoms of noble metals (Cu, Ag and Au) and 3d-transition metals (Mn,Fe,Co and Ni). We show that the presence of a local magnetic moment is a necessary but not sufficient condition to have a non zero current polarization. An essential requirement is the presence of spin-split localized levels near the Fermi energy that strongly hybridize with the graphene pi-bands. We also show that a gate potential can be used to tune the energy of these localized levels, leading to an external way to control the degree of spin-polarized current without the application of a magnetic field.Comment: 7 pages, 6 figure

Mimicking Nanoribbon Behavior Using a Graphene Layer on SiC

We propose a natural way to create quantum-confined regions in graphene in a system that allows large-scale device integration. We show, using first-principles calculations, that a single graphene layer on a trenched region of $[000\bar{1}]$ $SiC$ mimics i)the energy bands around the Fermi level and ii) the magnetic properties of free-standing graphene nanoribbons. Depending on the trench direction, either zigzag or armchair nanoribbons are mimicked. This behavior occurs because a single graphene layer over a $SiC$ surface loses the graphene-like properties, which are restored solely over the trenches, providing in this way a confined strip region.Comment: 4 pages, 4 figure