4 research outputs found

    A theoretical study on the relationship between pressure rise and the Damköhler number of end-gas auto-ignition in spark-ignited engines

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    The pressure rise caused by end-gas auto-ignition in spark-ignited engines is discussed using numerical simulation and theoretical approaches. The main objective of this study is to explain the mechanism by which the end-gas expansion during auto-ignition suppresses the pressure rise in spark-ignited engines, and theoretically to demonstrate using asymptotic analysis that the pressure rise depends on the Damköhler number. A one-dimensional direct numerical simulation (DNS) of end-gas auto-ignition is performed, and the modelling assumptions for it are discussed based on the DNS results. The Damköhler number, defined as the acoustic time scale and the characteristic time scale of the chemical reaction, is introduced in the modelling. The end-gas auto-ignition model is solved numerically, and it is shown that the pressure rise increases with the Damköhler number. Additionally, it is shown that the tendency of the pressure rise is due to the balance between the propagation rate of the expansion wave generated in the end gas and the reaction rate at auto-ignition, which varies with the Damköhler number. To derive the analytical solution of the relationship between the pressure rise and Damköhler number, the end-gas auto-ignition model is simplified based on the numerical results. The simplified model for end-gas auto-ignition is then solved using Newton’s method, and the analytical solution of the pressure rise is derived.</p

    Upconversion Luminescence of Er and Yb Codoped NaYF<sub>4</sub> Nanoparticles with Metal Shells

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    Upconversion photoluminescence (PL) of a composite nanoparticle consisting of an Er and Yb codoped NaYF<sub>4</sub> core and a Au shell is studied theoretically and experimentally. We first investigate the effects of a Au shell on the radiative and nonradiative emission rates of a dipole placed in a core, the absorption and scattering cross sections of a composite nanoparticle, and the electric field within a core at the excitation wavelength. We then synthesize the composite nanoparticle and study the PL properties. From the analyses of the PL data in combination with the data obtained by theoretical calculations, the mechanism of the enhancement and quenching of upconversion PL by the formation of a Au shell is studied

    Codoping n- and p‑Type Impurities in Colloidal Silicon Nanocrystals: Controlling Luminescence Energy from below Bulk Band Gap to Visible Range

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    We present a novel synthesis of ligand-free colloidal silicon nanocrystals (Si-NCs) that exhibits efficient photoluminescence (PL) in a wide energy range (0.85–1.8 eV) overcoming the bulk Si band gap limitation (1.12 eV). The key technology to achieve the wide-range controllable PL is the formation of donor and acceptor states in the band gap of Si-NCs by simultaneous doping of n- and p-type impurities. The colloidal Si-NCs are very stable in an ordinary laboratory atmosphere for more than a year. Furthermore, the PL spectra are very stable and are not at all affected even when the colloids are drop-cast on a substrate and dried in air. The engineering of the all-inorganic colloidal Si-NC and its optical data reported here are important steps for Si-based optoelectronic and biological applications

    Phosphorus and Boron Codoped Colloidal Silicon Nanocrystals with Inorganic Atomic Ligands

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    The surface structure of P and B codoped colloidal Si-NCs are studied by photoluminescence (PL) in hydrofluoric acid (HF) solution and X-ray photoelectron spectroscopy (XPS). We find that codoped Si-NCs are much more stable in HF solution than undoped, P-doped, and B-doped Si-NCs. The PL study combined with XPS results reveal that a high B concentration layer is formed on the surface of codoped Si-NCs and the layer acts as a kind of inorganic atomic ligands for Si-NCs. The high B concentration layer makes Si-NCs hydrophilic and dispersible in polar liquids. Furthermore, the layer effectively protects Si-NCs from oxidation in solution and in air
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