Describing Excited State Relaxation and Localization in TiO₂ Nanoparticles Using TD-DFT

We have investigated the description of excited state relaxation in naked and hydrated TiO₂ nanoparticles using Time-Dependent Density Functional Theory (TD-DFT) with three common hybrid exchange-correlation (XC) potentials: B3LYP, CAM-B3LYP and BHLYP. Use of TD-CAM-B3LYP and TD-BHLYP yields qualitatively similar results for all structures, which are also consistent with predictions of coupled-cluster theory for small particles. TD-B3LYP, in contrast, is found to make rather different predictions; including apparent conical intersections for certain particles that are not observed with TD-CAM-B3LYP nor with TD-BHLYP. In line with our previous observations for vertical excitations, the issue with TD-B3LYP appears to be the inherent tendency of TD-B3LYP, and other XC potentials with no or a low percentage of Hartree–Fock like exchange, to spuriously stabilize the energy of charge-transfer (CT) states. Even in the case of hydrated particles, for which vertical excitations are generally well described with all XC potentials, the use of TD-B3LYP appears to result in CT problems during excited state relaxation for certain particles. We hypothesize that the spurious stabilization of CT states by TD-B3LYP even may drive the excited state optimizations to different excited state geometries from those obtained using TD-CAM-B3LYP or TD-BHLYP. Finally, focusing on the TD-CAM-B3LYP and TD-BHLYP results, excited state relaxation in small naked and hydrated TiO₂ nanoparticles is predicted to be associated with a large Stokes’ shift

Limits to doping of wide band gap semiconductors

The role of defects in materials is one of the long-standing issues in solid-state chemistry and physics. On one hand, intrinsic ionic disorder involving stoichiometric amounts of lattice vacancies and interstitials is known to form in highly ionic crystals. There is a substantial literature on defect formation and the phenomenological limits of doping in this class of materials; in particular, involving the application of predictive quantum mechanical electronic structure computations. Most wide band gap materials conduct only electrons and few conduct holes, but rarely are both modes of conduction accessible in a single chemical system. The energies of electrons and holes are taken from the vertical ionization potentials and electron affinities; polaronic trapping of carriers is excluded. While the focus here is defect energetics, the atomic and electronic structures have been carefully examined in all cases to ensure physical results were obtained.</p

Limits to doping of wide band gap semiconductors

The role of defects in materials is one of the long-standing issues in solid-state chemistry and physics. On one hand, intrinsic ionic disorder involving stoichiometric amounts of lattice vacancies and interstitials is known to form in highly ionic crystals. There is a substantial literature on defect formation and the phenomenological limits of doping in this class of materials; in particular, involving the application of predictive quantum mechanical electronic structure computations. Most wide band gap materials conduct only electrons and few conduct holes, but rarely are both modes of conduction accessible in a single chemical system. The energies of electrons and holes are taken from the vertical ionization potentials and electron affinities; polaronic trapping of carriers is excluded. While the focus here is defect energetics, the atomic and electronic structures have been carefully examined in all cases to ensure physical results were obtained.</p

Limits to Doping of Wide Band Gap Semiconductors

Limits to Doping of Wide Band Gap Semiconductor