97 research outputs found
Synthesis, Crystal Structure, and Luminescence Properties of a Novel Green-Yellow Emitting Phosphor LiZn<sub>1−<i>x</i></sub>PO<sub>4</sub>:Mn<sub><i>x</i></sub> for Light Emitting Diodes
Synthesis, Crystal Structure, and Luminescence Properties of a Novel Green-Yellow Emitting Phosphor LiZn1−xPO4:Mnx for Light Emitting Diode
A Versatile Route to the Controlled Synthesis of Gold Nanostructures
This investigation demonstrates a versatile route for the synthesis of multishaped gold nanoparticles (such as spherical nanoparticles, bipyramids, nanorods, nanowires, T- and star-shaped nanoparticles, and triangular nanoplates) that can be controlled by varying the conditions. Morphological, structural, and spectral changes that are associated with the seed-mediated growth of the nanoparticles in the presence of cetyltrimethylammonium bromide (CTAB) were systematically examined. A mechanism of the fabrication of these multishaped gold nanostructures is also proposed. This approach for generating variously shaped gold nanostructures may be useful in the design of novel materials with improved optical and structural properties
Influence of Chemical and Mechanical Pressure on the Luminescence Properties of Near-Infrared Phosphors
In this study, we
aim to compare the changes in the luminescence
properties of Ga2O3:Cr3+ modified
by Al or Sc ion substitution (chemical pressure) and hydrostatic pressure.
We find the same behavior for Ga2–xAlxO3:Cr3+ and
different behavior for Ga2–xScxO3:Cr3+ in terms of
the optical properties under chemical and mechanical pressure. We
consider Al substitution, which does not affect the chemical bond
angles in the Cr3+ local environment and changes the crystal
volume, like mechanical pressure does. As confirmed by Raman spectroscopy,
the Sc ions cause lattice distortion and influence the chemical bond
lengths and angles in the Cr3+ local environment. The energy
structure diagrams of all levels of the d3 configuration
of the Cr3+ ion as a function of pressure are calculated
by considering the pressure dependence of the Racah parameters. The
energy structure diagrams presented in the paper show a decrease in
the energy of the 2E, 2T1, and 2T2 excited levels with an increase in Dq. This
does not align with the behavior predicted for these excited levels
by the standard Tanabe–Sugano diagram. It seems correct that
a high-pressure experiment involving Cr3+ and other transition
metals should be interpreted using the method and diagrams presented
herein
Synergistic Effect of the Anode Interface of Garnet-Type All-Solid-State Batteries
Next-generation
lithium-ion batteries must have high energy density
and safety, making the development of all-solid-state batteries imperative.
One of the biggest advantages of an all-solid-state lithium-ion battery
(ASSLIB) is that its alloy uses lithium metal as an anode while ignoring
its flammability and other dangers. Herein, high-conductivity garnet-type
Li6.75La3Zr1.75Ta0.25O12 (LLZTO) was chosen as the solid electrolyte part of an all-solid-state
battery. A composite anode was formed by melting Li and MXene-MAX
together, reducing the interface impedance from 566 to 55 Ω
cm2. The Li-MXene|LLZTO|LFP full battery displayed a high
initial discharge capacity of 163.0 mAh g–1 and
a Coulombic efficiency of 97.0% and maintained 90.2% of its discharge
capacity over 100 cycles, but it did not maintain a good overpotential.
Therefore, the synergistic effect of Li-MXene-Pt will highly improve
the performance of the full battery because of its high initial discharge
capacity of 150.0 mAh g–1 and Coulombic efficiency
of 95.5%, discharge capacity maintained at 93.3% over 100 cycles,
and low overpotential of 0.04 V
Highly Stable Red Oxynitride β-SiAlON:Pr<sup>3+</sup> Phosphor for Light-Emitting Diodes
Trivalent Pr3+-doped oxynitirde red phosphors β-SiAlON
with composition Si6–zAlzOzN8–z:Prx (z = 0–2.0, x = 0.016) were synthesized by
gas pressure sintering (GPS) at 1950 °C for 2 h. Red luminescence
in the range 600–650 nm was detected upon excitation with 460
nm blue light, indicating that the phosphor can be excited by blue
InGaN light-emitting diodes (LED). The crystallization and cell parameters
of samples were investigated by powder X-ray diffraction (XRD), Rietveld
refinement, and high-resolution transmission electron microscopy (HRTEM).
Energy-dispersive X-ray spectroscopy (EDX) and scanning electron microscopy
(SEM) were further adopted to examine the effect of Al substitution
on the microstructure. 27Al and 29Si solid-state
nuclear magnetic resonance (NMR) data are consistent with SiN4–xOx and
partially substituted AlN4–xOx tetrahedra. The temperature-dependent luminescence
from the 1D2 and 3P0 states
of Pr3+ were studied (10–573 K), and the integrated
red emission from 600 to 650 nm increased with temperature (298–473
K). This unexpected phenomenon is proposed to be the result of two
crossed excitation states in the configurational coordination diagram.
This investigation reveals the superior characteristics of nitride
compounds and the feasibility of doping Pr3+ into phosphor
Nanostructure Control of GaN by Electrochemical Etching for Enhanced Perovskite Quantum Dot LED Backlighting
Upgraded technology has realized miniaturization and
promoted transformation
in each field. Miniaturized light-emitting diode (LED) chips enable
higher resolution and create a full sense of immersion in displays.
Porous GaN is a structure that can reduce excitation light leakage
and enhance the light conversion efficiency. Perovskite quantum dots
with the highest optical density as candidate materials for loading
in pores can significantly decrease the aggregation phenomenon and
increase the path of light absorption. Here, the porous tunability
is explored by electrochemical etching under a range of voltages,
concentrations, and etching times with acid and base electrolytes,
such as oxalic acid and potassium hydroxide. Based on scanning electron
microscopy images, the distribution of the pores and the morphology
of pore channels can be distinguished under acid and base etching.
Larger pore sizes and distorted channels (∼680 nm) are presented
on the oxalic acid-etched GaN chip. In contrast, smaller pore sizes
and straight-deeper channels (∼5650 nm) are demonstrated on
the GaN by potassium hydroxide etching. Therefore, the hybrid nanostructure
is etched by oxalic acid and potassium hydroxide, separately. The
green and red light conversion efficiencies of perovskite quantum
dots pumped by a blue LED can be improved by 3 and 10 times, respectively,
resulting in a color gamut of approximately 124%
Ultrafast Self-Crystallization of High-External-Quantum-Efficient Fluoride Phosphors for Warm White Light-Emitting Diodes
In
this study, we used HF (as good solvent) to dissolve K<sub>2</sub>GeF<sub>6</sub> and K<sub>2</sub>MnF<sub>6</sub> and added ethanol
(as poor solvent) to cause ultrafast self-crystallization of K<sub>2</sub>GeF<sub>6</sub>:Mn<sup>4+</sup> crystals, which had an unprecedentedly
high external quantum efficiency that reached 73%. By using the red
phosphor, we achieved a high-quality warm white light-emitting diode
with color-rendering index of <i>R</i><sub>a</sub> = 94, <i>R</i>9 = 95, luminous efficacy of 150 lm W<sup>–1</sup>, and correlated color temperature at 3652 K. Furthermore, the good–poor
solvent strategy can be used to fast synthesize other fluorides
Highly Efficient Photoelectrochemical Hydrogen Generation Reaction Using Tungsten Phosphosulfide Nanosheets
The initiation of
hydrogen energy production from sunlight through photoelectrochemical
(PEC) system is an important strategy for resolving contemporary issues
in energy requirement. Although precious Pt and other noble metals
offer a desirable catalytic activity for this method, earth-abundant
nonprecious metal catalysts must be developed for wide-scale application.
In this regard, P-type silicon (P-Si) micropyramids (Si MPs) are a
favorable photocathode because of their effective light-conversion
properties and appropriate band gap position. In this study, we developed
amorphous tungsten phosphosulfide nanosheets (WS2–xPx NSs) on Si MPs through
a simple thermal annealing process for solar-driven hydrogen evolution
reaction. The P substitution in the nanostructure effectively produced
many defective sites at the edges. The product exhibited an efficient
photocurrent density of 19.11 mA cm–2 at 0 V and
a low onset potential of 0.21 VRHE compared with tungsten
disulfide (WS2; 13.43 mA cm–2). The fabricated
catalyst also showed desirable stability for up to 8 h for the WS0.60P1.40@Si MPs photocathode. The extraordinary
activity could be due to numerous active sites provided by heteroatoms
(sulfur and phosphorus) in the edges, resulting in dwindling reaction
kinetics barrier and enhanced PEC activity
Ultrafast Self-Crystallization of High-External-Quantum-Efficient Fluoride Phosphors for Warm White Light-Emitting Diodes
In
this study, we used HF (as good solvent) to dissolve K<sub>2</sub>GeF<sub>6</sub> and K<sub>2</sub>MnF<sub>6</sub> and added ethanol
(as poor solvent) to cause ultrafast self-crystallization of K<sub>2</sub>GeF<sub>6</sub>:Mn<sup>4+</sup> crystals, which had an unprecedentedly
high external quantum efficiency that reached 73%. By using the red
phosphor, we achieved a high-quality warm white light-emitting diode
with color-rendering index of <i>R</i><sub>a</sub> = 94, <i>R</i>9 = 95, luminous efficacy of 150 lm W<sup>–1</sup>, and correlated color temperature at 3652 K. Furthermore, the good–poor
solvent strategy can be used to fast synthesize other fluorides
Cation-Size-Mismatch Tuning of Photoluminescence in Oxynitride Phosphors
Red or yellow phosphors excited by a blue light-emitting
diode
are an efficient source of white light for everyday applications.
Many solid oxides and nitrides, particularly silicon nitride-based
materials such as M<sub>2</sub>Si<sub>5</sub>N<sub>8</sub> and MSi<sub>2</sub>O<sub>2</sub>N<sub>2</sub> (M = Ca, Sr, Ba), CaAlSiN<sub>3</sub>, and SiAlON, are useful phosphor hosts with good thermal stabilities.
Both oxide/nitride and various cation substitutions are commonly used
to shift the emission spectrum and optimize luminescent properties,
but the underlying mechanisms are not always clear. Here we show that
size-mismatch between host and dopant cations tunes photoluminescence
shifts systematically in M<sub>1.95</sub>Eu<sub>0.05</sub>Si<sub>5–<i>x</i></sub>Al<sub><i>x</i></sub>N<sub>8–<i>x</i></sub>O<sub><i>x</i></sub> lattices, leading
to a red shift when the M = Ba and Sr host cations are larger than
the Eu<sup>2+</sup> dopant, but a blue shift when the M = Ca host
is smaller. Size-mismatch tuning of thermal quenching is also observed.
A local anion clustering mechanism in which Eu<sup>2+</sup> gains
excess nitride coordination in the M = Ba and Sr structures, but excess
oxide in the Ca analogues, is proposed for these mismatch effects.
This mechanism is predicted to be general to oxynitride materials
and will be useful in tuning optical and other properties that are
sensitive to local coordination environments
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