2 research outputs found
Controllable Synthesis of Two-Dimensional Ruddlesden–Popper-Type Perovskite Heterostructures
Two-dimensional Ruddlesden–Popper
type perovskites (2D perovskites)
have recently attracted increasing attention. It is expected that
2D perovskite-based heterostructures can significantly improve the
efficiency of the optoelectronic devices and extend the material functionalities;
however, rational synthesis of such heterostructures has not been
realized to date. We report on a general low-temperature synthetic
strategy for the synthesis of 2D perovskite-based lateral and vertical
(<i>n</i>-CH<sub>3</sub>(CH<sub>2</sub>)<sub>3</sub>NH<sub>3</sub>)<sub>2</sub>PbI<sub>4</sub>/(<i>n</i>-CH<sub>3</sub>(CH<sub>2</sub>)<sub>3</sub>NH<sub>3</sub>)<sub>2</sub>(CH<sub>3</sub>NH<sub>3</sub>)ÂPb<sub>2</sub>I<sub>7</sub> heterostructures for the
first time. A combination of solution synthesis and gas–solid
phase intercalation approach allows us to efficiently synthesize both
lateral and vertical heterostructures with great flexibility. X-ray
diffraction, photoluminescence, and photoluminescence excitation mapping
and electrical transport measurement studies reveal the successful
synthesis of lateral and vertical heterostructures with precisely
spatial-modulation control and distinguishable interfaces. Our studies
not only provide an efficient synthetic strategy with great flexibility,
enabling us to create 2D perovskite-based heterostructures, but also
offer a platform to investigate the physical processes in those heterostructures
Anomalous Pressure Characteristics of Defects in Hexagonal Boron Nitride Flakes
Research
on hexagonal boron nitride (hBN) has been intensified
recently due to the application of hBN as a promising system of single-photon
emitters. To date, the single photon origin remains under debate even
though many experiments and theoretical calculations have been performed.
We have measured the pressure-dependent photoluminescence (PL) spectra
of hBN flakes at low temperatures by using a diamond anvil cell device.
The absolute values of the pressure coefficients of discrete PL emission
lines are all below 15 meV/GPa, which is much lower than the pressure-induced
36 meV/GPa redshift rate of the hBN bandgap. These PL emission lines
originate from atom-like localized defect levels confined within the
bandgap of the hBN flakes. Interestingly, the experimental results
of the pressure-dependent PL emission lines present three different
types of pressure responses corresponding to a redshift (negative
pressure coefficient), a blueshift (positive pressure coefficient),
or even a sign change from negative to positive. Density functional
theory calculations indicate the existence of competition between
the intralayer and interlayer interaction contributions, which leads
to the different pressure-dependent behaviors of the PL peak shift