90 research outputs found
Ductility in Crystalline Boron Subphosphide (B<sub>12</sub>P<sub>2</sub>) for Large Strain Indentation
Our
studies of brittle fracture in B<sub>4</sub>C showed that shear-induced
cracking of the (B<sub>11</sub>C) icosahedra leading to amorphous
B<sub>4</sub>C regions induced cavitation and failure. This suggested
that to obtain hard boron-rich phases that are ductile, we need to
replace the CBC chains of B<sub>4</sub>C with two-atom chains that
can migrate between icosahedra during shear without cracking the icosahedra.
We report here a quantum mechanism (QM) simulation showing that under
indentation stress conditions, superhard boron subphosphide (B<sub>12</sub>P<sub>2</sub>) displays such a unique deformation mechanism.
Thus, stress accumulated as shear increases is released by slip of
the icosahedra planes through breaking and then reforming the P–P
chain bonds without fracturing the (B<sub>12</sub>) icosahedra. This
icosahedral slip may facilitate formation of mobile dislocation and
deformation twinning in B<sub>12</sub>P<sub>2</sub> under high-stress
conditions, leading to high ductility. However, the presence of twin
boundaries (TBs) in B<sub>12</sub>P<sub>2</sub> will weaken the icosahedra
along TBs, leading to the fracture of (B<sub>12</sub>) icosahedra
under indentation stress conditions. These results suggest that crystalline
B<sub>12</sub>P<sub>2</sub> is an ideal superhard material to achieve
high ductility
Boron Suboxide and Boron Subphosphide Crystals: Hard Ceramics That Shear without Brittle Failure
Boron
suboxide (B<sub>6</sub>O), boron carbide (B<sub>4</sub>C),
and related materials are superhard. However, they exhibit low fracture
toughness, which limits their engineering applications. Here we show
the shear deformation mechanism of B<sub>6</sub>O using density functional
theory along the most plausible slip system (01Ì…11)/<101Ì…1>.
We discovered an unusual phenomenon in which the highly sheared system
recovers its original crystal structure, which indicates the possibility
of being sheared to a large strain without failure. We also found
a similar structural recovery in boron subphosphide (B<sub>12</sub>P<sub>2</sub>) for shearing along the same slip system. In contrast,
for components of B<sub>4</sub>C, we found brittle failure. These
novel deformation mechanisms under high shear deformation conditions
suggest that a key element to designing ductile hard materials is
to couple the icosahedra via one- or two-atom chains that allow the
system to shear by walking the intericosahedral bonds and chain bonds
alternately to accommodate large shear without fracturing the icosahedra
Structure and Properties of Boron-Very-Rich Boron Carbides: B<sub>12</sub> Icosahedra Linked through Bent CBB Chains
The
atomic structures of boron carbide in the regime below ∼13.3
at. % C (known as boron-very-rich boron carbide, BvrBC) have not previously
been reported due to the complexity of the structure and bonding.
We report here the atomistic crystal structures for stoichiometry
B<sub>14</sub>C, with only 6.7 at. % C, predicted using quantum mechanics
(QM) at the PBE level. We find that B<sub>14</sub>C consists of one
B<sub>12</sub> icosahedral cluster and one C–B–B chain
per unit cell. The C–B–B chain can be linear or bent,
leading to two different space groups for (B<sub>12</sub>)ÂCBB. Our
bonding analyses show that both structures satisfy the electron counting
rule (Wade’s rule). However, the bent CBB chain which has lower
crystal symmetry, leading to an energy substantially more stable (0.315
eV per molecular unit) than that of the linear CBB chain structure,
which has high crystal symmetry. This is because the bent CBB chain
structure requires only one three-center–two-electron (3c-2e)
bond, while the linear CBB chain structure requires three 3c-2e bonds.
We predicted the mechanical properties of both structures from QM
simulations. We found that shearing the linear CBB chain structure
transforms first to the bent CBB chain structure under both pure and
biaxial shear deformations as the shear proceeds the icosahedra deconstruction
due to the interaction of the CBB chains with the icosahedra. This
suggests that the bent CBB structure is responsible for the failure
processes of B<sub>14</sub>C
Structure and Properties of Boron-Very-Rich Boron Carbides: B<sub>12</sub> Icosahedra Linked through Bent CBB Chains
The
atomic structures of boron carbide in the regime below ∼13.3
at. % C (known as boron-very-rich boron carbide, BvrBC) have not previously
been reported due to the complexity of the structure and bonding.
We report here the atomistic crystal structures for stoichiometry
B<sub>14</sub>C, with only 6.7 at. % C, predicted using quantum mechanics
(QM) at the PBE level. We find that B<sub>14</sub>C consists of one
B<sub>12</sub> icosahedral cluster and one C–B–B chain
per unit cell. The C–B–B chain can be linear or bent,
leading to two different space groups for (B<sub>12</sub>)ÂCBB. Our
bonding analyses show that both structures satisfy the electron counting
rule (Wade’s rule). However, the bent CBB chain which has lower
crystal symmetry, leading to an energy substantially more stable (0.315
eV per molecular unit) than that of the linear CBB chain structure,
which has high crystal symmetry. This is because the bent CBB chain
structure requires only one three-center–two-electron (3c-2e)
bond, while the linear CBB chain structure requires three 3c-2e bonds.
We predicted the mechanical properties of both structures from QM
simulations. We found that shearing the linear CBB chain structure
transforms first to the bent CBB chain structure under both pure and
biaxial shear deformations as the shear proceeds the icosahedra deconstruction
due to the interaction of the CBB chains with the icosahedra. This
suggests that the bent CBB structure is responsible for the failure
processes of B<sub>14</sub>C
Experiment Methodology.
<p>Panel A shows the physical set-up of the experiment. Participants interacted with the virtual environment by placing their right index finger into a custom splint attached to the PHANTOM. Participants sat in front of the projection system and their hand was free to move about the 3D workspace. The PHANTOM was located inside a projection system, consisting of a frame above the PHANTOM, supporting an inverted video monitor. Panel B shows the force-displacement curves for the stiffnesses of box 1 and box 2. Panel C shows a schematic of the visual feedback supplied to the participant during a single successful trial. Participants attempted to move a box from the left of the screen to a target position by pushing down on the box and sliding it to the right. Finger position was indicated by a small sphere and was occluded during penetration of the box. Deformations of the box were not shown.</p
Effects of box, cognitive task, and session on box displacement and velocity.
<p>Participants were asked to move one of two possible boxes (box 1 or box 2) from the left of the screen to a target position by pushing down on the box and sliding it to the right. Half of trials were performed while participants were completing a simultaneous cognitive task (Cog ON) and during the rest participants completed the motor task alone (Cog OFF).Box displacement was defined as the total distance toward the target that the participant was able to translate the box during the trial and average box velocity was defined as the box displacement normalized by trial duration. Markers indicate data means and error bars mark 95% confidence bands of the mean. During sessions 1–7 participants were provided with vibrotactile feedback proportional to the normal force they were applying to the box as well as visual feedback. During session 8 they completed the task using visual feedback alone (NF = no feedback). The shaded area corresponds to data from a previous study <a href="http://www.plosone.org/article/info:doi/10.1371/journal.pone.0032743#pone.0032743-Stepp1" target="_blank">[22]</a> in which participants trained using visual feedback alone in a single session.</p
Significant (<i>p</i><0.05) Pairwise Effect Sizes in Box Velocity between Sessions.
†<p><i>p<sub>adj</sub></i><0.001.</p
Hierarchical Composite Structures Prepared by Electrophoretic Deposition of Carbon Nanotubes onto Glass Fibers
Carbon
nanotube/glass fiber hierarchical composite structures have been produced
using an electrophoretic deposition (EPD) approach for integrating
the carbon nanotubes (CNTs) into unidirectional E-glass fabric, followed
by infusion of an epoxy polymer matrix. The resulting composites show
a hierarchical structure, where the structural glass fibers, which
have diameters in micrometer range, are coated with CNTs having diameters
around 10–20 nm. The stable aqueous dispersions of CNTs were
produced using a novel ozonolysis and ultrasonication technique that
results in dispersion and functionalization in a single step. Ozone-oxidized
CNTs were then chemically reacted with a polyethyleneimine (PEI) dendrimer
to enable cathodic EPD and promote adhesion between the CNTs and the
glass-fiber substrate. Deposition onto the fabric was accomplished
by placing the fabric in front of the cathode and applying a direct
current (DC) field. Microscopic characterization shows the integration
of CNTs throughout the thickness of the glass fabric, where individual
fibers are coated with CNTs and a thin film of CNTs also forms on
the fabric surfaces. Within the composite, networks of CNTs span between
adjacent fibers, and the resulting composites exhibit good electrical
conductivity and considerable increases in the interlaminar shear
strength, relative to fiber composites without integrated CNTs. Mechanical,
chemical and morphological characterization of the coated fiber surfaces
reveal interface/interphase modification resulting from the coating
is responsible for the improved mechanical and electrical properties.
The CNT-coated glass-fiber laminates also exhibited clear changes
in electrical resistance as a function of applied shear strain and
enables self-sensing of the transition between elastic and plastic
load regions
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