Accumulation of Electron Spin Polarization at Semiconductor Interfaces

In this Brief Report we study theoretically the propagation of electron spin polarization through an interface separating two n-type semiconductor regions within the two-component drift-diffusion model in an applied electric field. It is assumed that inhomogeneous spin polarization is created locally by a continuous source of spin polarization and is driven through the boundary by the electric field. The spin polarization distribution is calculated analytically. We find that for specific values of parameters describing the system, the electron spin polarization is accumulated near the interface. A simple analytical expression for the amplitude of spin accumulation as a function of the system parameters is found. The obtained results will be useful in designing new spintronic devices

Long-Lived Spin Coherence States in Semiconductor Heterostructures

We study evolution of electron spin coherence having nonhomogeneous direction of spin polarization vector in semiconductor heterostructures. It is found that the electron spin relaxation time due to the D’yakonov- Perel’ relaxation mechanism essentially depends on the initial spin polarization distribution. This effect has its origin in the coherent spin precession of electrons diffusing in the same direction. We predict a long spin relaxation time of a novel structure: a spin coherence standing wave and discuss its experimental realization

Optically Induced Suppression of Spin Relaxation in Two-Dimensional Electron Systems with Rashba Interaction

A pulsed technique for electrons in two-dimensional systems, in some ways analogous to spin echo in nuclear magnetic resonance, is discussed. We show that a sequence of optical below-band-gap pulses can be used to suppress the electron spin relaxation due to the D’yakonov-Perel’ spin relaxation mechanism. The spin relaxation time is calculated for several pulse sequences within a Monte Carlo simulation scheme. The maximum of the spin relaxation time as a function of magnitude or width of the pulses corresponds to a π pulse. It is important that even relatively distant pulses efficiently suppress spin relaxation

Electronic Structure of Nuclear-Spin-Polarization-Induced Quantum Dots

We study a system in which electrons in a two-dimensional electron gas are confined by a nonhomogeneous nuclear-spin polarization. The system consists of a heterostructure that has nonzero nuclei spins. We show that in this system electrons can be confined into a dot region through a local nuclear-spin polarization. The nuclear-spin-polarization-induced quantum dot has interesting properties indicating that electron energy levels are time dependent because of the nuclear-spin relaxation and diffusion processes. Electron confining potential is a solution of diffusion equation with relaxation. Experimental investigations of the time dependence of electron energy levels will result in more information about nuclear-spin interactions in solids

Photovoltaic Effect in Bent Quantum Wires in the Ballistic Transport Regime

A scheme for the generation of a photocurrent in bent quantum wires is proposed. We calculate the current using a generalized Landauer-Büttiker approach that takes into account the electromagnetic radiation. For circularly polarized light, it is demonstrated that the curvature in the bent wire induces an asymmetry in the scattering coefficients for left and right moving electrons. This asymmetry results in a current at zero bias voltage. The effect is due to the geometry of the wire which transforms the photon angular momentum into translational motion for the electrons. Possible experimental realizations of this scheme are discussed

Focusing of Spin Polarization in Semiconductors by Inhomogeneous Doping

We study the evolution and distribution of nonequilibrium electron spin polarization in n-type semiconductors within the two-component drift-diffusion model in an applied electric field. Propagation of spin-polarized electrons through a boundary between two semiconductor regions with different doping levels is considered.We assume that inhomogeneous spin polarization is created locally and driven through the boundary by the electric field.We show that an initially created narrow region of spin polarization can be further compressed and amplified near the boundary. Since the boundary involves variation of doping but no real interface between two semiconductor materials, no significant spin polarization loss is expected. The proposed mechanism will be therefore useful in designing new spintronic devices

Slow Spin Relaxation in Two-Dimensional Electron Systems with Antidots

We report a Monte Carlo investigation of the effect of a lattice of antidots on spin relaxation in twodimensional electron systems. The spin relaxation time is calculated as a function of geometrical parameters describing the antidot lattice, namely the antidot radius and the distance between their centers. It is shown that spin polarization relaxation can be efficiently suppressed by the chaotic spatial motion due to the antidot lattice. This phenomenon offers a new approach to spin coherence manipulation in spintronics devices

Frequency Doubling and Memory Effects in the Spin Hall Effect

We predict that when an alternating voltage is applied to a semiconducting system with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect results in a transverse voltage containing a double-frequency component. We also demonstrate that there is a phase shift between applied and transverse-voltage oscillations, related to the general memristive behavior of semiconductor spintronic systems. A different method to achieve frequency doubling based on the inverse spin Hall effect is also discussed

Current-Voltage Characteristics of Semiconductor/Ferromagnet Junctions in the Spin-Blockade Regime

It was recently predicted [Phys. Rev. B, 193301 (2007)] that spin blockade may develop at nonmagnetic semiconductor/perfect ferromagnet junctions when the electron flow is directed from the semiconductor into the ferromagnet. Here we consider current-voltage characteristics of such junctions. By taking into account the contact resistance, we demonstrate a current stabilization effect: by increasing the applied voltage, the current density through the junction saturates at a specific value. The transient behavior of the current density is also investigated. We show that an abrupt change in the applied voltage is accompanied by a spike in the current density. It is anticipated that this is a common dynamical behavior of the current density in structures with conductivity depending on the level of spin polarization

Spin-Photovoltaic Effect in Quantum Wires Due to Intersubband Transitions

We consider the current induced in a quantum wire by external electromagnetic radiation. The photocurrent is caused by the interplay of spin-orbit interaction (Rashba and Dresselhaus terms) and an external in-plane magnetic field. We calculate this current using a Wigner functions approach, taking into account radiation-induced transitions between transverse subbands. The magnitude and the direction of the current depends on the Dresselhaus and Rashba constants, strength of magnetic field, radiation frequency, and intensity. The current can be controlled by changing some of these parameters