7,364 research outputs found

    Forward and diffractive physics at CMS

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    A rich program of forward physics, including very low-x QCD dynamics, diffraction in the presence of a hard scale and photon-mediated processes, is being studied by the CMS Collaboration, taking advantage of the forward detector instrumentation around the CMS interaction point. We describe here the analyses planned for the first LHC data-taking period, when the istantaneous luminosity will be low (1029–1032 cm−2 s−1) and the pile-up negligible. A centre-of-mass energy of 14TeV is assumed

    E835 at FNAL: Charmonium Spectroscopy in pˉp\bar p p Annihilations

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    I present preliminary results on the search for hch_c in its ηcÎł\eta_c\gamma and J/ψπ0J/\psi\pi^0 decay modes. We observe an excess of \eta_c\gammaeventsnear3526MeVthathasaprobability events near 3526 MeV that has a probability {\cal P} \sim 0.001toarisefrombackgroundfluctations.Theresonanceparametersare to arise from background fluctations. The resonance parameters are M=3525.8 \pm 0.2 \pm 0.2 MeV,MeV, \Gamma\leq1MeV,and 1 MeV, and 10.6\pm 3.7\pm3.4(br) < \Gamma_{\bar{p}p}B_{\eta_c\gamma} < 12.8\pm 4.8\pm4.5(br) eV.WefindnoeventexcesswithinthesearchregionintheeV. We find no event excess within the search region in the J/\psi\pi^0$ mode.Comment: Presented at the 6th International Conference on Hyperons, Charm and Beauty Hadrons (BEACH 2004), Chicago(Il), June 27-July 3,200

    Interference Study of the chi_c0 (1^3P_0) in the Reaction Proton-Antiproton -> pi^0 pi^0

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    Fermilab experiment E835 has observed proton-antiproton annihilation production of the charmonium state chi_c0 and its subsequent decay into pi^0 pi^0. Although the resonant amplitude is an order of magnitude smaller than that of the non-resonant continuum production of pi^0 pi^0, an enhanced interference signal is evident. A partial wave expansion is used to extract physics parameters. The amplitudes J=0 and 2, of comparable strength, dominate the expansion. Both are accessed by L=1 in the entrance proton-antiproton channel. The product of the input and output branching fractions is determined to be B(pbar p -> chi_c0) x B(chi_c0 -> pi^0 pi^0)= (5.09 +- 0.81 +- 0.25) x 10^-7.Comment: 4 pages, 4 figures, Accepted by PRL (July 2003

    Precision measurements of the total and partial widths of the psi(2S) charmonium meson with a new complementary-scan technique in antiproton-proton annihilations

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    We present new precision measurements of the psi(2S) total and partial widths from excitation curves obtained in antiproton-proton annihilations by Fermilab experiment E835 at the Antiproton Accumulator in the year 2000. A new technique of complementary scans was developed to study narrow resonances with stochastically cooled antiproton beams. The technique relies on precise revolution-frequency and orbit-length measurements, while making the analysis of the excitation curve almost independent of machine lattice parameters. We study the psi(2S) meson through the processes pbar p -> e+ e- and pbar p -> J/psi + X -> e+ e- + X. We measure the width to be Gamma = 290 +- 25(sta) +- 4(sys) keV and the combination of partial widths Gamma_e+e- * Gamma_pbarp / Gamma = 579 +- 38(sta) +- 36(sys) meV, which represent the most precise measurements to date.Comment: 17 pages, 3 figures, 3 tables. Final manuscript accepted for publication in Phys. Lett. B. Parts of the text slightly expanded or rearranged; results are unchange

    Test of Ultra Fast Silicon Detectors for the TOTEM upgrade project

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    This paper describes the performance of a prototype timing detector, based on 50 mu m thick Ultra Fast Silicon Detector, as measured in a beam test using a 180 GeV/c momentum pion beam. The dependence of the time precision on the pixel capacitance and bias voltage is investigated in this paper. A timing precision from 30 ps to 100 ps (RMS), depending on the pixel capacitance, has been measured at a bias voltage of 180 V.Peer reviewe

    Characterisation of 3D trench silicon pixel sensors irradiated at 1⋅1017 1 MeV neqcm-2

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    The 3D trench silicon pixel sensors developed by the TimeSPOT collaboration have demonstrated exceptional performance, even after exposure to extreme radiation fluences up to (Formula presented.). This study assesses the radiation tolerance of these sensors using minimum ionizing particles during a beam test campaign. The results indicate that while radiation damage reduces charge collection efficiency and overall detection efficiency, these losses can be mitigated to levels comparable to non-irradiated sensors by increasing the reverse bias voltage. Charge multiplication was observed and characterised for the first time in 3D trench sensors, revealing a distinct operating regime post-irradiation achievable at bias voltages close to 300 V. Additionally, the timing performance of irradiated sensors remains comparable to their non-irradiated counterparts, underscoring their resilience to radiation damage. Currently, 3D trench silicon detectors are among the fastest and most radiation-hard pixel sensors available for vertex detectors in high-energy physics colliders. These findings highlight the potential of these sensors for new 4D tracking systems of future experiments at the Future Circular Hadron Collider (FCC-hh), advancing the capabilities of radiation-hard sensor technology

    Calibration and performance tests of the Very-Front-End electronics for the CMS electromagnetic calorimeter

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    The Very-Front-End electronics processing signals from photodetectors of the CMS electromagnetic calorimeter have been put through an extensive test programme to guarantee functionality and reliability. The final characteristics of the VFE boards designed for the calorimeter barrel and endcaps are presented. The results, which have been also verified during test beam at CERN, confirm the high quality of the boards production and show that the CMS detector specifications are reached

    10 ps timing with highly irradiated 3D trench silicon pixel sensors

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    In this paper the results of a beam test characterization campaign of 3D trench silicon pixel sensors are presented. A time resolution in the order of 10 ps was measured both for non-irradiated and irradiated sensors up to a fluence of 2.5⋅1016 1 MeV neq cm−22.5 \cdot 10^{16}\,1\,MeV\, n_{eq}\,cm^{-2}. This feature and a detection efficiency close to 99%99\% make this sensors one of the best candidates for 4D tracking detectors in High-Energy-Physics experiments.Comment: Prepared for submission to JINST, IWORID 202
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