InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting

While photoelectrochemical (PEC) water splitting is a very promising route toward zero-carbon energy, conversion efficiency remains limited. Semiconductors with narrower band gaps can absorb a much greater portion of the solar spectrum, thereby increasing efficiency. However, narrow band gap (∼1 eV) III–V semiconductor photoelectrodes have not yet been thoroughly investigated. In this study, the narrow band gap quaternary III–V alloy InGaAsP is demonstrated for the first time to have great potential for PEC water splitting, with the long-term goal of developing high-efficiency tandem PEC devices. TiO2-coated InGaAsP photocathodes generate a photocurrent density of over 30 mA/cm2 with an onset potential of 0.45 V versus reversible hydrogen electrode, yielding an applied bias efficiency of over 7%. This is an excellent performance, given that nearly all power losses can be attributed to reflection losses. X-ray photoelectron spectroscopy and photoluminescence spectroscopy show that InGaAsP and TiO2 form a type-II band alignment, greatly enhancing carrier separation and reducing recombination losses. Beyond water splitting, the tunable band gap of InGaAsP could be of further interest in other areas of photocatalysis, including CO2 reduction

Infrared up-conversion imaging in nonlinear metasurfaces

Infrared imaging is a crucial technique in a multitude of applications, including night vision, autonomous vehicles navigation, optical tomography, and food quality control. Conventional infrared imaging technologies, however, require the use of materials like narrow-band gap semiconductors which are sensitive to thermal noise and often require cryogenic cooling. Here, we demonstrate a compact all-optical alternative to perform infrared imaging in a metasurface composed of GaAs semiconductor nanoantennas, using a nonlinear wave-mixing process. We experimentally show the up-conversion of short-wave infrared wavelengths via the coherent parametric process of sum-frequency generation. In this process, an infrared image of a target is mixed inside the metasurface with a strong pump beam, translating the image from infrared to the visible in a nanoscale ultra-thin imaging device. Our results open up new opportunities for the development of compact infrared imaging devices with applications in infrared vision and life sciences

Forward and Backward Switching of Nonlinear Unidirectional Emission from GaAs Nanoantennas

High-index III–V semiconductor nanoantennas have gained great attention for enhanced nonlinear light–matter interactions, in the past few years. However, the complexity of nonlinear emission profiles imposes severe constraints on practical applications, such as in optical communications and integrated optoelectronic devices. These complexities include the lack of unidirectional nonlinear emission and the severe challenges in switching between forward and backward emissions, due to the structure of the susceptibility tensor of the III–V nanoantennas. Here, we propose a solution to both issues via engineering the nonlinear tensor of the nanoantennas. The special nonlinear tensorial properties of zinc-blende material can be used to engineer the nonlinear characteristics via growing the nanoantennas along different crystalline orientations. Based on the nonlinear multipolar effect, we have designed and fabricated (110)-grown GaAs nanoantennas, with engineered tensorial properties, embedded in a transparent low-index material. Our technique provides an approach not only for unidirectional second-harmonic generation (SHG) forward or backward emission but also for switching from one to another. Importantly, switching the SHG emission directionality is obtained only by rotating the polarization of the incident light, without the need for physical variation of the antennas or the environment. This characteristic is an advantage, as compared to other nonlinear nanoantennas, including (100)- and (111)-grown III–V counterparts or silicon and germanium nanoantennas. Indeed, (110)-GaAs nanoantennas allow for engineering the nonlinear nanophotonic systems including nonlinear “Huygens metasurfaces” and offer exciting opportunities for various nonlinear nanophotonics technologies, such as nanoscale light routing and light sources, as well as multifunctional flat optical elements