19 research outputs found
Ultrafast Self-Crystallization of High-External-Quantum-Efficient Fluoride Phosphors for Warm White Light-Emitting Diodes
In
this study, we used HF (as good solvent) to dissolve K<sub>2</sub>GeF<sub>6</sub> and K<sub>2</sub>MnF<sub>6</sub> and added ethanol
(as poor solvent) to cause ultrafast self-crystallization of K<sub>2</sub>GeF<sub>6</sub>:Mn<sup>4+</sup> crystals, which had an unprecedentedly
high external quantum efficiency that reached 73%. By using the red
phosphor, we achieved a high-quality warm white light-emitting diode
with color-rendering index of <i>R</i><sub>a</sub> = 94, <i>R</i>9 = 95, luminous efficacy of 150 lm W<sup>–1</sup>, and correlated color temperature at 3652 K. Furthermore, the good–poor
solvent strategy can be used to fast synthesize other fluorides
Ultrafast Self-Crystallization of High-External-Quantum-Efficient Fluoride Phosphors for Warm White Light-Emitting Diodes
In
this study, we used HF (as good solvent) to dissolve K<sub>2</sub>GeF<sub>6</sub> and K<sub>2</sub>MnF<sub>6</sub> and added ethanol
(as poor solvent) to cause ultrafast self-crystallization of K<sub>2</sub>GeF<sub>6</sub>:Mn<sup>4+</sup> crystals, which had an unprecedentedly
high external quantum efficiency that reached 73%. By using the red
phosphor, we achieved a high-quality warm white light-emitting diode
with color-rendering index of <i>R</i><sub>a</sub> = 94, <i>R</i>9 = 95, luminous efficacy of 150 lm W<sup>–1</sup>, and correlated color temperature at 3652 K. Furthermore, the good–poor
solvent strategy can be used to fast synthesize other fluorides
Advancing Near-Infrared Light Sources: Enhancing Chromium Emission through Cation Substitution in Ultra-Broadband Near-Infrared Phosphors
The growing interest in the use of near-infrared (NIR)
radiation
for spectroscopy, optical communication, and medical applications
spanning both NIR-I (700–900 nm) and NIR-II (900–1700
nm) has driven the need for new NIR light sources. NIR phosphor-converted
light-emitting diodes (pc-LEDs) are expected to replace traditional
lamps mainly due to their high efficiency and compact design. Broadband
NIR phosphors activated by Cr3+ and Cr4+ have
attracted significant research interest, offering emission across
a wide range from 700 to 1700 nm. In this work, we synthesized a series
of Sc2(1–x)Ga2xO3:Cr3+/4+ materials (x = 0–0.2) with broadband NIR-I (Cr3+) and NIR-II
(Cr4+) emission. We observed a substantial increase in
the intensity of Cr3+ (approximately 77 times) by incorporating
Ga3+ ions. Additionally, our investigation revealed that
energy transfer occurred between Cr3+ and Cr4+ ions. Configuration diagrams are presented to elucidate the behavior
of Cr3+ and Cr4+ ions within the Sc2O3 matrix. We also observed a phase transition at a pressure
of 20.2 GPa, resulting in a new unknown phase where Cr3+ luminescence exhibited a high-symmetry environment. Notably, this
study presents the pressure-induced shift of NIR Cr4+ luminescence
in Sc2(1–x)Ga2xO3:Cr3+/4+. The linear shifts were estimated
at 83 ± 3 and 61 ± 6 cm–1/GPa before and
after the phase transition. Overall, our findings shed light on the
synthesis, luminescent properties, temperature, and high-pressure
behavior within the Sc2(1–x)Ga2xO3:Cr3+/4+ materials.
This research contributes to the understanding and potential applications
of these materials in the development of efficient NIR light sources
and other optical devices
Sharp-to-Broad Band Energy Transfer in Lithium Aluminate and Gallate Phosphors for SWIR LED
Short-wave infrared (SWIR) phosphor-converted light-emitting
diode
(LED) technology holds promise for advancing broadband light sources.
Despite the potential, limited research has delved into the energy
transfer mechanism from sharp-line to broadband emission in SWIR phosphors,
which remains underexplored. Herein, we demonstrate bright SWIR phosphors
achieved through Cr3+/Ni2+ energy transfer in
LiGa5(1–x)Al5xO8. High-resolution X-ray diffraction revealed the
typical solid solution and distortion occurring in Al3+ octahedral sites. In addition, the X-ray absorption spectrum illustrates
that Cr3+ and Ni2+ have different coordination
environments, showing the possibility that they occupy different positions
or that the coordinated environment of Ni2+ is distorted
due to charge imbalance. Temperature-dependent studies provide insights
into the energy transfer dynamics between Cr3+/Ni2+, from the 2E level of Cr3+ (sharp band) to
the 3T1 level of Ni2+ (broadband).
The increased emission intensity at lower temperatures in the x = 0.6 and x = 1.0 samples can be explained
by the positioning of the 3T1 level above the 2E level of Cr3+ ions. Finally, we established a
mechanism involving a sharp line to broadband energy transfer showcasing
a high-power SWIR LED with a radiant power of 21.45 mW
Hidden Hexavalent Chromium Ions with Subtle Structural Evolution in Near-Infrared Phosphors
Cr-doped
inorganic materials are pivotal in developing near-infrared
optical materials; however, multivalent Cr ions and their respective
distribution in the materials remain ambiguous. Herein, a series of
Li(Sc1–xInx)O2:Cr phosphors containing both Cr3+/Cr6+ ions are prepared. High-resolution synchrotron X-ray
diffraction (XRD) reveals two similar phases in Li(Sc1–xInx)O2. Raman spectra further confirm distinct scattering patterns for
the two end-member compositions, corroborating the findings from the
synchrotron XRD analysis. Cr K-edge X-ray absorption
near-edge structure and extended X-ray absorption fine structure demonstrate
that most Cr ions in the as-prepared samples are Cr6+,
while Cr3+ becomes dominant after washing with water. Moreover,
the source and distribution of Cr3+ and Cr6+ ions in the as-prepared and washed samples are revealed through
X-ray fluorescence and X-ray excited optical luminescence techniques,
which indicate that Cr6+ ions aggregate within the sample,
while Cr3+ ions are evenly distributed. Photoluminescence,
decay curves, and line shape analyses are implemented to resolve the
electron–lattice interactions, and the corresponding mechanisms
are provided to explain the asymmetry between photoluminescence and
photoluminescence excitation spectra. Overall, this study provides
valuable insights into the distribution of low-concentration multivalence
ions in solid-state materials and offers a deeper understanding of
the approaches to precisely resolve the subtle changes in the crystal
structure
Correlated Na<sup>+</sup> Ion Migration Invokes Zero Thermal Quenching in a Sodium Superionic Conductor-type Phosphor
Among
the many potential Eu2+-activated sodium superionic
conductor (NASICON)-based host materials, the Sc3+-based
NASICON phosphor (Na3Sc2(PO4)3:Eu2+) is a promising phosphor material for high-power
lighting applications owing to its unusual thermal stability at elevated
temperatures. It has previously been shown that negative thermal quenching
(TQ) can be tailored to zero TQ depending on the Eu2+ concentration.
However, the obtained zero-TQ composition has low photoluminescent
quantum yields, which hinders its applicability to high-power lighting.
Herein, we report a holistic study of the tuning of thermal stability
from negative TQ to zero TQ while preserving the original emission
efficiency by introducing Lu3+ ions in Na3Sc2(PO4)3:Eu2+. Furthermore,
we fabricated a high-power white light-emitting diode using optimized
Lu3+-doped Na3Sc2(PO4)3:Eu2+ as the blue component, delivering a high
color-rendering index value of 90 with a high luminous efficiency
value of 25 lm/W obtained at a flux current of 1000 mA. Therefore,
the findings of this work provide novel scientific insights into the
importance of structure–property relationships in designing
highly efficient thermally stable phosphors for high-power lighting
applications
Photoluminescent Evolution Induced by Structural Transformation Through Thermal Treating in the Red Narrow-Band Phosphor K<sub>2</sub>GeF<sub>6</sub>:Mn<sup>4+</sup>
This
study explored optimal preparation conditions for K<sub>2</sub>GeF<sub>6</sub>:Mn<sup>4+</sup> red phosphors by using chemical coprecipitation
method. The prepared hexagonal <i>P</i>3̅m1 K<sub>2</sub>GeF<sub>6</sub>:Mn<sup>4+</sup> exhibited efficient red emission,
high color purity, good Mn<sup>4+</sup> concentration stability, and
low thermal quenching. Structural evolution from hexagonal <i>P</i>3̅<i>m</i>1 to <i>P</i>6<sub>3</sub>mc and then <i>P</i>6<sub>3</sub><i>mc</i> to cubic <i>Fm</i>3<i>m</i> occurred after thermal
treatment at approximately 400 and 500 °C, respectively. Hexagonal <i>P</i>6<sub>3</sub>mc phase showed an obvious zero phonon line
peak at 621 nm, whereas cubic <i>Fm</i>3<i>m</i> phase showed no red emission. Yellowish K<sub>2</sub>GeF<sub>6</sub>:Mn<sup>4+</sup> with both hexagonal <i>P</i>3̅<i>m</i>1 and <i>P</i>6<sub>3</sub><i>mc</i> symmetries are promising commercial red phosphors for white light-emitting
diodes
Chemical Control of SrLi(Al<sub>1–<i>x</i></sub>Ga<i><sub>x</sub></i>)<sub>3</sub>N<sub>4</sub>:Eu<sup>2+</sup> Red Phosphors at Extreme Conditions for Application in Light-Emitting Diodes
Phosphor
materials are promising candidates for white-light-emitting
diode applications. High-quality phosphor materials must be synthesized
under extreme conditions. In this study, a series of SrLi(Al1–xGax)3N4:Eu2+ (GSLA) narrow-band emission red phosphors
are successfully synthesized under 1000 atm nitrogen gas atmosphere
through the hot isostatic press, which cannot be achieved under low
pressure. Successful Ga incorporation is confirmed by X-ray diffraction
and Rietveld refinement. Phonon repetition structure and detailed
thermal properties are analyzed by temperature-dependent photoluminescence
intensity and lifetime. The structural ordering and rigidity are comprehensively
evaluated by Raman spectra. The blue shift of the photoluminescence
spectra enhances the luminous efficacy of radiation, making GSLA a
potential candidate for practical application. This study promotes
the research on materials synthesized under extreme conditions and
the development of novel phosphor materials
Probing Local Structural Changes by Sharp Luminescent Infrared Nanophosphor for Application in Light-Emitting Diodes
Cr3+-doped infrared phosphors are promising candidates
for next-generation phosphor-converted infrared light-emitting diodes
(LEDs) because they can, in principle, tune and convert the luminescence
spectra from an LED chip. However, most studies focus on broad-band
Cr3+-doped phosphors, and the control mechanism of Cr3+-doped phosphors with sharp line emissions remains ambiguous.
Here, we report LiGa5(1–x)Al5xO8:Cr3+ phosphors
with sharp line emissions. The luminescence analysis reveals the subtle
change of the local structure around Cr3+, which cannot
be well resolved by X-ray diffraction. The deviation between the temperature-dependent
photoluminescence and decay profile is introduced as well. Furthermore,
the morphologies of LiGa5(1–x)Al5xO8:Cr3+ phosphors
with high aluminum concentration demonstrate their great potential
for mini-LED applications. Finally, an LED package is constructed,
and it reveals the potential for angiographic applications. This study
opens up a new understanding and perspective for Cr3+-doped
sharp emission phosphors and reveals their potential for LED applications
