Thermal Conductivity Measurements of Semitransparent Single-Walled Carbon Nanotube Films by a Bolometric Technique

We introduce a new technique for measurement of the thermal conductivity of ultrathin films of single-walled carbon nanotubes (SWNTs) utilizing IR radiation as heat source and the SWNT film as thermometer. The technique is applied to study the temperature dependence of the thermal conductivity of an as-prepared SWNT film obtained in the electric arc discharge process and a film of purified SWNTs prepared by vacuum filtration. The interplay between thermal and electrical transport in SWNT networks is analyzed in relation to the type of intertube junctions and the possibility of optimizing the thermal and electrical properties of SWNT networks for specific applications is discussed

MoS₂‑Based Optoelectronic Gas Sensor with Sub-parts-per-billion Limit of NO₂ Gas Detection

Red light illumination with photon energy matching the direct band gap of chemical vapor deposition grown single-layer MoS2 with Au metal electrodes was used to induce a photocurrent which was employed instead of dark current for NO2 gas sensing. The resulting Au/MoS2/Au optoelectronic gas sensor showed a significant enhancement of the device sensitivity S toward ppb level of NO2 gas exposure reaching S = 4.9%/ppb (4900%/ppm), where S is a slope of dependence of relative change of the sensor resistance on NO2 concentration. Further optimization of the MoS2-based optoelectronic gas sensor by using graphene (Gr) with a work function lower than that of Au for the electrical contacts to the MoS2 channel allowed an increase of photocurrent. The limit of detection of NO2 gas at the level of 0.1 ppb was obtained for the MoS2 channel with graphene electrodes coated by Au. This value was calculated using experimentally obtained sensitivity and noise values and exceeds the U.S. Environment Protection Agency requirement for NO2 gas detection at ppb level

Light-Mediated C−C σ-Bond Driven Crystallization of a Phenalenyl Radical Dimer

Polymorphismthe phenomenon that a given compound forms more than one crystalline arrangement of the molecules in the solid state plays a crucial role in understanding organic conductors, superconductors, and magnets. We have found that solutions of a new phenalenyl radical can give rise to two (nonpolymorphic) crystalline forms depending on whether the crystallization is allowed to proceed in the presence or absence of light. In both cases the crystals take the form of black shining blades and are indistinguishable by optical microscopy. We have fully characterized these crystalline forms, and we show that they differ by the presence or absence of a C−C σ-bond between the unpaired electrons of the parent radical. These molecular forms crystallize from the same solvent to give rise to a σ-dimerized insulator and a monomeric radical semiconductor as dictated by the presence or absence of light

Networks of Semiconducting SWNTs: Contribution of Midgap Electronic States to the Electrical Transport

ConspectusSingle-walled carbon nanotube (SWNT) thin films provide a unique platform for the development of electronic and photonic devices because they combine the advantages of the outstanding physical properties of individual SWNTs with the capabilities of large area thin film manufacturing and patterning technologies. Flexible SWNT thin film based field-effect transistors, sensors, detectors, photovoltaic cells, and light emitting diodes have been already demonstrated, and SWNT thin film transparent, conductive coatings for large area displays and smart windows are under development. While chirally pure SWNTs are not yet commercially available, the marketing of semiconducting (SC) and metallic (MT) SWNTs has facilitated progress toward applications by making available materials of consistent electronic structure. Nevertheless the electrical transport properties of networks of separated SWNTs are inferior to those of individual SWNTs. In particular, for semiconducting SWNTs, which are the subject of this Account, the electrical transport drastically differs from the behavior of traditional semiconductors: for example, the bandgap of germanium (<i>E</i> = 0.66 eV) roughly matches that of individual SC-SWNTs of diameter 1.5 nm, but in the range 300–100 K, the intrinsic carrier concentration in Ge decreases by more than 10 orders of magnitude while the conductivity of a typical SC-SWNT network decreases by less than a factor of 4. Clearly this weak modulation of the conductivity hinders the application of SC-SWNT films as field effect transistors and photodetectors, and it is the purpose of this Account to analyze the mechanism of the electrical transport leading to the unusually weak temperature dependence of the electrical conductivity of such networks. Extrinsic factors such as the contribution of residual amounts of MT-SWNTs arising from incomplete separation and doping of SWNTs are evaluated. However, the observed temperature dependence of the conductivity indicates the presence of midgap electronic states in the semiconducting SWNTs, which provide a source of low-energy excitations, which can contribute to hopping conductance along the nanotubes following fluctuation induced tunneling across the internanotube junctions, which together dominate the low temperature transport and limit the resistivity of the films. At high temperatures, the intrinsic carriers thermally activated across the bandgap as in a traditional semiconductor became available for band transport. The midgap states pin the Fermi level to the middle of the bandgap, and their origin is ascribed to defects in the SWNT walls. The presence of such midgap states has been reported in connection with scanning tunneling spectroscopy experiments, Coulomb blockade observations in low temperature electrical measurements, selective electrochemical deposition imaging, tip-enhanced Raman spectroscopy, high resolution photocurrent spectroscopy, and the modeling of the electronic density of states associated with various defects.Midgap states are present in conventional semiconductors, but what is unusual in the present context is the extent of their contribution to the electrical transport in networks of semiconducting SWNTs. In this Account, we sharpen the focus on the midgap states in SC-SWNTs, their effect on the electronic properties of SC-SWNT networks, and the importance of these effects on efforts to develop electronic and photonic applications of SC-SWNTs

Light-Mediated C−C σ-Bond Driven Crystallization of a Phenalenyl Radical Dimer

Polymorphismthe phenomenon that a given compound forms more than one crystalline arrangement of the molecules in the solid state plays a crucial role in understanding organic conductors, superconductors, and magnets. We have found that solutions of a new phenalenyl radical can give rise to two (nonpolymorphic) crystalline forms depending on whether the crystallization is allowed to proceed in the presence or absence of light. In both cases the crystals take the form of black shining blades and are indistinguishable by optical microscopy. We have fully characterized these crystalline forms, and we show that they differ by the presence or absence of a C−C σ-bond between the unpaired electrons of the parent radical. These molecular forms crystallize from the same solvent to give rise to a σ-dimerized insulator and a monomeric radical semiconductor as dictated by the presence or absence of light

Light-Mediated C−C σ-Bond Driven Crystallization of a Phenalenyl Radical Dimer

Polymorphismthe phenomenon that a given compound forms more than one crystalline arrangement of the molecules in the solid state plays a crucial role in understanding organic conductors, superconductors, and magnets. We have found that solutions of a new phenalenyl radical can give rise to two (nonpolymorphic) crystalline forms depending on whether the crystallization is allowed to proceed in the presence or absence of light. In both cases the crystals take the form of black shining blades and are indistinguishable by optical microscopy. We have fully characterized these crystalline forms, and we show that they differ by the presence or absence of a C−C σ-bond between the unpaired electrons of the parent radical. These molecular forms crystallize from the same solvent to give rise to a σ-dimerized insulator and a monomeric radical semiconductor as dictated by the presence or absence of light

Light-Mediated C−C σ-Bond Driven Crystallization of a Phenalenyl Radical Dimer

Polymorphismthe phenomenon that a given compound forms more than one crystalline arrangement of the molecules in the solid state plays a crucial role in understanding organic conductors, superconductors, and magnets. We have found that solutions of a new phenalenyl radical can give rise to two (nonpolymorphic) crystalline forms depending on whether the crystallization is allowed to proceed in the presence or absence of light. In both cases the crystals take the form of black shining blades and are indistinguishable by optical microscopy. We have fully characterized these crystalline forms, and we show that they differ by the presence or absence of a C−C σ-bond between the unpaired electrons of the parent radical. These molecular forms crystallize from the same solvent to give rise to a σ-dimerized insulator and a monomeric radical semiconductor as dictated by the presence or absence of light

Continuous Spinning of a Single-Walled Carbon Nanotube−Nylon Composite Fiber

We report a chemical processing technology that allows the continuous spinning of single-walled carbon nanotubes (SWNTs)−nylon 6 (PA6) fibers by the in-situ polymerization of caprolactam in the presence of SWNTs, which simultaneously optimizes the morphology of the composite. We show that caprolactam is an excellent solvent for carboxylic-acid-functionalized SWNTs (SWNT−COOH) and that this allows the efficient dispersal of the SWNTs and subsequent grafting of PA6 chains to the SWNTs through condensation reactions between the carboxylic-acid group on SWNT−COOH and the terminal amine group of PA6. The existence of a graft copolymer between the PA6 chains and the SWNTs is demonstrated by IR, TGA, and AFM studies, and we show that the solubility of the polymerized material in formic acid is controlled by the degree of graft copolymerization. The amount of grafted PA6 chains that are attached to the SWNTs can be adjusted by controlling the concentration of the initiator (6-aminocaproic acid). The process leads to a uniform dispersion of the SWNTs, and the presence of the graft copolymer increases the polymer/SWNT compatibility while strengthening the interfacial interaction between the nanotube and matrix. The Young's modulus, tensile strength, and thermal stability of the SWNT-reinforced composite fibers produced by this process are significantly improved

Mechanism of Ammonia Detection by Chemically Functionalized Single-Walled Carbon Nanotubes: <i>In </i><i>Situ</i> Electrical and Optical Study of Gas Analyte Detection

We provide definitive evidence for the mechanism of electronic detection of ammonia by monitoring in situ changes in the electrical resistance and optical spectra of films of poly(m-aminobenzenesulfonic acid)-functionalized SWNTs (SWNT-PABS). The increase of resistance during exposure to ammonia is associated with deprotonation of the PABS side chain that in turn induces electron transfer between the oligomer and the valence band of the semiconducting SWNTs. Near IR spectroscopy is used to demonstrate that the charge transfer is a weakly driven process, and this accounts for the high reversibility of the sensor. We show that the sensitivity of the chemiresistors increases as the film thickness is reduced to the percolation threshold and that the SWNT-PABS film thickness provides a simple means to enhance the electronic response