4 research outputs found
Trapping a Photoelectron behind a Repulsive Coulomb Barrier in Solution
Multiply
charged anions (MCAs) display unique photophysics and
solvent-stabilizing effects. Well-known aqueous species such as SO42– and PO43– experience spontaneous electron detachment or charge-separation
fragmentation in the gas phase owing to the strong Coulomb repulsion
arising from the excess of negative charge. Thus, anions often present
low photodetachment thresholds and the ability to quickly eject electrons
into the solvent via charge-transfer-to-solvent (CTTS) states. Here,
we report spectroscopic evidence for the existence of a repulsive
Coulomb barrier (RCB) that blocks the ejection of “CTTS-like”
electrons of the aqueous B12F122– dianion. Our spectroscopic experimental and theoretical studies
indicate that despite the exerted Coulomb repulsion by the nascent
radical monoanion B12F12–•aq, the photoexcited electron remains about the B12F12–• core. The RCB is
an established feature of the potential energy landscape of MCAs in
vacuo, which seems to extend to the liquid phase highlighting recent
observations about the dielectric behavior of confined water
High-Performance Mid-IR to Deep-UV van der Waals Photodetectors Capable of Local Spectroscopy at Room Temperature
The ability to perform broadband optical spectroscopy with sub-diffraction-limit resolution is highly sought-after for a wide range of critical applications. However, sophisticated tip-enhanced techniques are currently required to achieve this goal. We bypass this challenge by demonstrating an extremely broadband photodetector based on a two-dimensional (2D) van der Waals heterostructure that is sensitive to light across over a decade in energy from the mid-infrared (MIR) to deep-ultraviolet (DUV) at room temperature. The devices feature high detectivity (> 10^9 cm Hz^1/2 W^-1) together with high bandwidth (2.1 MHz). The active area can be further miniaturized to submicron dimensions, far below the diffraction limit for the longest detectable wavelength of 4.1 um, enabling such devices for facile measurements of local optical properties on atomic-layer-thickness samples placed in close proximity. This work can lead to the development of low-cost and high-throughput photosensors for hyperspectral imaging at the nanoscale
Persistent Photogenerated State Attained by Femtosecond Laser Irradiation of Thin <i>T</i><sub>d</sub>‑MoTe<sub>2</sub>
Laser excitation has emerged as a means to expose hidden
states
of matter and promote phase transitions on demand. Such laser-induced
transformations are often rendered possible owing to the delivery
of spatially and/or temporally manipulated light, carrying energy
quanta well above the thermal background. Here, we report time-resolved
broadband femtosecond (fs) transient absorption measurements on thin
flakes of the Weyl semimetal candidate Td-MoTe2 subjected to various levels and schemes of fs-photoexcitation.
Our results reveal that impulsive fs-laser irradiation alters the
interlayer behavior of the low temperature Td phase as evidenced by the persistent disappearance of its
characteristic coherent 1A1 ≈ 13 cm–1 shear phonon mode. We found that this structural
transformation is likely related to lattice strain formation, withstands
thermal cycling, and can be reverted to the 1T′
phase by fs-laser treatment at room temperature. Since interlayer
shear strain was encountered to lead to a topologically distinct phase
in an analogous compound, our work opens the door to the reversible
optical control of electronic properties in this class of materials
High-Performance Mid-IR to Deep-UV van der Waals Photodetectors Capable of Local Spectroscopy at Room Temperature
The ability to perform broadband
optical spectroscopy with subdiffraction-limit
resolution is highly sought-after for a wide range of critical applications.
However, sophisticated near-field techniques are currently required
to achieve this goal. We bypass this challenge by demonstrating an
extremely broadband photodetector based on a two-dimensional (2D)
van der Waals heterostructure that is sensitive to light across over
a decade in energy from the mid-infrared (MIR) to deep-ultraviolet
(DUV) at room temperature. The devices feature high detectivity (>109 cm Hz1/2 W–1) together with
high bandwidth (2.1 MHz). The active area can be further miniaturized
to submicron dimensions, far below the diffraction limit for the longest
detectable wavelength of 4.1 μm, enabling such devices for facile
measurements of local optical properties on atomic-layer-thickness
samples placed in close proximity. This work can lead to the development
of low-cost and high-throughput photosensors for hyperspectral imaging
at the nanoscale