430 research outputs found

    Phase stability of chromium based compensated ferrimagnets with inverse Heusler structure

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    Chromium based inverse Heusler compounds of the type Cr2YZ (Y=Co, Fe; Z=Al, Ga, In, Si, Ge, Sn) have been proposed as fully compensated half-metallic ferrimagnets. Such materials are of large interest for spintronics because they combine small magnetic moment with high spin polarization over a wide temperature range. We assess their thermodynamic stability by their formation enthalpies obtained from density functional theory calculations. All compounds under investigation are unstable. Cr2FeSi and Cr2CoAl are stable with respect to the elemental constituents, but decompose into binary phases. Cr2FeGe, Cr2CoGa, Cr2FeSn and Cr2CoIn are found to be unstable with respect to their elemental constituents. We identify possible binary decompositions.Comment: 3 pages, 1 figure, 2 table

    Enhanced exchange bias in MnN/CoFe bilayers after high-temperature annealing

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    We report an exchange bias of more than 2700‚ÄČ2700\,Oe at room temperature in MnN/CoFe bilayers after high-temperature annealing. We studied the dependence of exchange bias on the annealing temperature for different MnN thicknesses in detail and found that samples with tMnN>32‚ÄČt_{\text{MnN}}>32\,nm show an increase of exchange bias for annealing temperatures higher than T_{\text{A}}=400\,^{\circ}C. Maximum exchange bias values exceeding 2000‚ÄČ2000\,Oe with reasonably small coercive fields around 600‚ÄČ600\,Oe are achieved for tMnN=42,48‚ÄČt_{\text{MnN}}= 42, 48\,nm. The median blocking temperature of those systems is determined to be 180\,^{\circ}C after initial annealing at T_{\text{A}}=525\,^{\circ}C. X-ray diffraction measurements and Auger depth profiling show that the large increase of exchange bias after high-temperature annealing is accompanied by strong nitrogen diffusion into the Ta buffer layer of the stacks

    Electrical switching of antiferromagnetic Mn2_2Au and the role of thermal activation

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    Electrical manipulation of antiferromagnets with specific symmetries offers the prospect of creating novel, antiferromagnetic spintronic devices. Such devices aim to make use of the insensitivity to external magnetic fields and the ultrafast dynamics at the picosecond timescale intrinsic to antiferromagnets. The possibility to electrically switch antiferromagnets was first predicted for Mn2Au and then experimentally observed in tetragonal CuMnAs. Here, we report on the electrical switching and detection of the Neel order in epitaxial films of Mn2Au. The exponential dependences of the switching amplitude on the current density and the temperature are explained by a macroscopic thermal activation model taking into account the effect of the Joule heating in Hall cross devices and we observe that the thermal activation plays a key role in the reorientation process of the Neel order. Our model analysis shows that the electrically set Neel-state is long-term stable at room temperature, paving the way for practical applications in memory devices.Comment: 8 pages, 6 figure

    Influence of tetragonal distortion on the magnetic and electronic properties of the Heusler compound Co2TiSn from first principles

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    Using the full potential linearized augmented plane wave plus local orbitals method we determine ab-initio the lattice parameters of tetragonally distorted Co2TiSn in the L21 structure. The tetragonal lattice parameter c is determined as a function of the lattice parameter a by energy minimization. The change in total energy is found to be only a few kBTk_B T with respect to room temperature. The spin polarizations as well as the magnetizations are stable against small lattice distortions. It is shown, that the volume is not constant upon distortion and that the volume change is related with significant changes in the magnetization and the gap energy.Comment: 3 pages, 4 figure

    Ab initio prediction of ferrimagnetism, exchange interactions and Curie temperatures in Mn2TiZ Heusler compounds

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    The Heusler compounds Mn2_2TiZ (Z = Al, Ga, In, Si, Ge, Sn, P, As, Sb) are of large interest due to their potential ferrimagnetic properties and high spin polarization. Here, we present calculations of the structural and magnetic properties of these materials. Their magnetic moment follows the Slater-Pauling rule m=NV‚ąí24m = N_V - 24. None of them is actually a perfect half-metallic ferrimagnet, but some exhibit more than 90% spin polarization and Curie temperatures well above room temperature. The exchange interactions are complex, direct and indirect exchange contributions are identified. The Curie temperature scales with the total magnetic moment, and it has a positive pressure dependence. The role of the Z element is investigated: it influences the properties of the compounds mainly via its valence electron number and its atomic radius, which determines the lattice parameter. Based on these results, Mn2_2TiSi, Mn2_2TiGe, and Mn2_2TiSn are proposed as candidates for spintronic applications.Comment: 13 pages, 6 figure
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