10 research outputs found
Evaluation of Back Contact in Spray Deposited SnS Thin Film Solar Cells by Impedance Analysis
The
role of back metal (M) contact in sprayed SnS thin film solar
cells with a configuration Glass/F:SnO<sub>2</sub>/In<sub>2</sub>S<sub>3</sub>/SnS/M (M = Graphite, Cu, Mo, and Ni) was analyzed and discussed
in the present study. Impedance spectroscopy was employed by incorporating
constant phase elements (CPE) in the equivalent circuit to investigate
the degree of inhomogeneity associated with the heterojunction and
M/SnS interfaces. A best fit to Nyquist plot revealed a CPE exponent
close to unity for thermally evaporated Cu, making it an ideal back
contact. The Bode phase plot also exhibited a higher degree of disorders
associated with other M/SnS interfaces. The evaluation scheme is useful
for other emerging solar cells developed from low cost processing
schemes like spray deposition, spin coating, slurry casting, electrodeposition,
etc
Facile, Noncyanide Based Etching of Spray Deposited Cu<sub>2</sub>ZnSnS<sub>4</sub> Thin Films for Secondary Phase Removal
The
coexistence of secondary phases in the quaternary compound
kesterite Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS), a promising photovoltaic
absorber, is a major problem while synthesizing under Zn or Cu rich
conditions. A large variety of secondary phases, such as CuS, Cu<sub>1.8</sub>S, Cu<sub>2</sub>S, Cu<sub>2</sub>SnS<sub>3</sub>, and ZnS
exist on the surface unless they are not removed by dedicated surface
treatment before the annealing step. Under a carefully chosen concentrations
of the starting precursors (usually, Zn-poor and Sn-rich) for spray
pyrolyzed CZTS, the fraction of ZnS is minimized. However, under such
growth conditions, binary Cu-sulfides become dominant. In this work,
a selective noncyanide based chemical etching procedure is demonstrated
prior to the deposition of the buffer layer. The absorber surface
was treated with hydrogen peroxide that is known to remove Cu<sub>1.8</sub>S, Cu<sub>2</sub>S, and allied secondary phases to a large
extent as compared to conventional KCN based techniques. By this treatment,
the optical band gap is changed from 1.8 eV to most suitable 1.5 eV,
which ensures improved photon absorption
Self-Powered Ultraviolet–Visible Transparent Photodetector Based on Mo-Doped BiVO<sub>4</sub> Thin Films
Till now, BiVO4 has been extensively investigated
for
photoelectrochemical cell applications; however, the efficacy of BiVO4 in the photodetector (PD) and photovoltaic field is still
challenging due to its poor absorption ability, conductivity, and
high recombination rate. Keeping these issues in mind, herein, we
report a co-sputtered Mo-doped (Mo:BiVO4) thin films-based
self-powered ultraviolet (UV)–visible transparent PD (TPD)
with a high photo-to-dark current ratio value of 1.2 × 103 and a detectivity value of 4.1 × 1010 Jones.
Mo:BiVO4-based self-powered TPD devices show a fast response
speed with a value of 3.5 ms. Moreover, the fabricated TPD devices
show a clear photovoltaic photoresponse with an average visible transparency
value of 65%. The highest obtained open-circuit voltage value is about
300 mV with a short-circuit current density value of 2.53 mA/cm2 under visible illumination along with an onsite power production
value of 44 μW. Developed Mo:BiVO4-based TPD devices
explore the suitability of BiVO4 in the transparent optoelectronics
and onsite power generation field for the future
Transparent Photovoltaics for Self-Powered Bioelectronics and Neuromorphic Applications
Inspired by the brain, future computation
depends on creating a
neuromorphic device that is energy-efficient for information processing
and capable of sensing and learning. The current computation-chip
platform is not capable of self-power and neuromorphic functionality;
therefore, a need exists for a new platform that provides both. This
Perspective illustrates potential transparent photovoltaics as a platform
to achieve scalable, multimodal sensory, self-sustainable neural systems
(e.g., visual cortex, nociception, and electronic
skin). We present herein a strategy to harvest solar power using a
transparent photovoltaic device that provides neuromorphic functionality
to implement versatile, sustainable, integrative, and practical applications.
The proposed solid-inorganic heterostructure platform is indispensable
for achieving a variety of biosensors, sensory systems, neuromorphic
computing, and machine learning
Field-Effect Passivation of the Cu<sub>2</sub>O/ZnO Transparent Heterojunction Photovoltaic Device Using Ga<sub>2</sub>O<sub>3</sub> Thin Film
Photovoltaics (PV) would be more promising if light could
generate
electric power invisibly. This will endow more degrees of freedom
to PV cells for wide-range deployment. Transparent photovoltaic (TPV)
devices are the groundwork of the building-integrated photovoltaic
(BIPV) systems that provide aesthetics to the buildings and solar
energy convertor modules. TPV is adequate for the BIPV system of windows.
Heterojunctions between p-type Cu2O and n-type ZnO have
emerged as one of the most promising TPV devices. However, their inadequate
transparency and a deficit of open-circuit voltage (VOC) and short-circuit current density (JSC) remained an open challenge. In this work, we have
fabricated a thin Ga2O3 buffer layer embedded
transparent ZnO/Cu2O heterojunction photovoltaic device,
showing an average visible transmittance of more than 50%. The insertion
of the Ga2O3 buffer layer remarkably increases
the JSC and VOC to ∼860% and ∼41%, respectively. The TPV device also
demonstrated a high JSC of 3.41 mA/cm2 under UV light. The Ga2O3 layer provides
a graded conduction band alignment and passivates the interface by
the field-effect passivation mechanism. The Ga2O3 buffer layer embedded device also demonstrated a broadband photodetection
with remarkably high responsivity and detectivity of 250 mA/W and
5 × 1011 Jones at self-biased conditions
MXene-Integrated Metal Oxide Transparent Photovoltaics and Self-Powered Photodetectors
MXene-integrated
photovoltaic devices can be used to create optically
transparent systems to produce electrical energy. MXenes, an emerging
family of two-dimensional materials, have attracted a tremendous amount
of interest for their use in various applications. In particular,
their optical transparency, metallic conductivity, and large-scale
processing make MXenes highly applicable in transparent photovoltaic
devices (TPVDs). Here we propose a Ti3C2Tx MXene-based inorganic TPVD. Reducing the
sheet resistance of MXene and improving its contact with the metal
oxide (NiO/TiO2) heterojunction enables the generation
of electric power (30 μW cm–2) from ultraviolet
light while selectively passing visible light for high-transparency
(39.73%). Moreover, the photovoltaic effect induces a high photovoltage
of 0.45 V to enable the TPVD to work in self-powered mode. The MXene-embedded
transparent photodetector works in photovoltaic mode and has a fast
response speed of 80 μs and high detectivity of 1.6 × 1010 Jones. The spacing of the MXene-transparent devices at color-neutral
coordinates in color maps indicates the invisibility of the device.
This work demonstrates the large-scale application of MXene as a seamless
platform for transparent electronics of photovoltaics and photodetectors.
Transparent photoelectric interfaces can be used for energy generation;
in bioelectronics; and in windows of building, vehicles, and displays
Highly Transparent Bidirectional Transparent Photovoltaics for On-Site Power Generators
If we can transparently produce energy,
we may apply invisible
power generators to residential architectures to supply energy without
losing visibility. Transparent photovoltaic cells (TPVs) are a transparent
solar technology that transmits visible light while absorbing the
invisible short wavelengths, such as ultraviolet. Installing TPVs
in buildings provides an on-site energy supply platform as a window-embedded
power generator or color-matched solar cell installation on a building
surface. The record-high power generation (10.82 mW) and photocurrent
value (68.25 mA) were achieved from large-scale TPVs (25 cm2). The metal oxide heterojunction is the fundamental TPV structure.
The high-performance TPVs were achieved by adopting a thin Si film
between ZnO and NiO as a functional light-absorbing layer. Based on
the large energy band gap of metal oxides, TPVs have a clear transmittance
(43%) and good color coordinates, which ensure degrees of freedom
to adopt TPV power generators in various colored structures or transparent
power windows. The bidirectional feature of TPVs is ultimately desirable
to maximize light utilization. TPVs can generate electric power from
sunlight during the day and can also work from artificial light sources
at night. In the near future, humans will acquire electric power without
losing visibility with on-site energy supply platforms
Highly Transparent Bidirectional Transparent Photovoltaics for On-Site Power Generators
If we can transparently produce energy,
we may apply invisible
power generators to residential architectures to supply energy without
losing visibility. Transparent photovoltaic cells (TPVs) are a transparent
solar technology that transmits visible light while absorbing the
invisible short wavelengths, such as ultraviolet. Installing TPVs
in buildings provides an on-site energy supply platform as a window-embedded
power generator or color-matched solar cell installation on a building
surface. The record-high power generation (10.82 mW) and photocurrent
value (68.25 mA) were achieved from large-scale TPVs (25 cm2). The metal oxide heterojunction is the fundamental TPV structure.
The high-performance TPVs were achieved by adopting a thin Si film
between ZnO and NiO as a functional light-absorbing layer. Based on
the large energy band gap of metal oxides, TPVs have a clear transmittance
(43%) and good color coordinates, which ensure degrees of freedom
to adopt TPV power generators in various colored structures or transparent
power windows. The bidirectional feature of TPVs is ultimately desirable
to maximize light utilization. TPVs can generate electric power from
sunlight during the day and can also work from artificial light sources
at night. In the near future, humans will acquire electric power without
losing visibility with on-site energy supply platforms
Highly Transparent Bidirectional Transparent Photovoltaics for On-Site Power Generators
If we can transparently produce energy,
we may apply invisible
power generators to residential architectures to supply energy without
losing visibility. Transparent photovoltaic cells (TPVs) are a transparent
solar technology that transmits visible light while absorbing the
invisible short wavelengths, such as ultraviolet. Installing TPVs
in buildings provides an on-site energy supply platform as a window-embedded
power generator or color-matched solar cell installation on a building
surface. The record-high power generation (10.82 mW) and photocurrent
value (68.25 mA) were achieved from large-scale TPVs (25 cm2). The metal oxide heterojunction is the fundamental TPV structure.
The high-performance TPVs were achieved by adopting a thin Si film
between ZnO and NiO as a functional light-absorbing layer. Based on
the large energy band gap of metal oxides, TPVs have a clear transmittance
(43%) and good color coordinates, which ensure degrees of freedom
to adopt TPV power generators in various colored structures or transparent
power windows. The bidirectional feature of TPVs is ultimately desirable
to maximize light utilization. TPVs can generate electric power from
sunlight during the day and can also work from artificial light sources
at night. In the near future, humans will acquire electric power without
losing visibility with on-site energy supply platforms
Thermally Stable Silver Nanowires-Embedding Metal Oxide for Schottky Junction Solar Cells
Thermally
stable silver nanowires (AgNWs)-embedding metal oxide
was applied for Schottky junction solar cells without an intentional
doping process in Si. A large scale (100 mm<sup>2</sup>) Schottky
solar cell showed a power conversion efficiency of 6.1% under standard
illumination, and 8.3% under diffused illumination conditions which
is the highest efficiency for AgNWs-involved Schottky junction Si
solar cells. Indium–tin–oxide (ITO)-capped AgNWs showed
excellent thermal stability with no deformation at 500 °C. The
top ITO layer grew in a cylindrical shape along the AgNWs, forming
a teardrop shape. The design of ITO/AgNWs/ITO layers is optically
beneficial because the AgNWs generate plasmonic photons, due to the
AgNWs. Electrical investigations were performed by Mott–Schottky
and impedance spectroscopy to reveal the formation of a single space
charge region at the interface between Si and AgNWs-embedding ITO
layer. We propose a route to design the thermally stable AgNWs for
photoelectric device applications with investigation of the optical
and electrical aspects
