14,780 research outputs found

    Understanding Caregiver Factors Influencing Childhood Influenza Vaccination

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    Influenza is a contagious disease that affects approximately 30% to 40% of American children yearly, and all children 18 and under are recommended to be vaccinated. Through the use of a survey tool, 119 responses were collected about the factors that influence the decisions of caregivers whether or not to vaccinate their children against influenza. The knowledge generated from the survey may be used to formulate education programs to increase vaccination rates

    Anisotropic Stark Effect and Electric-Field Noise Suppression for Phosphorus Donor Qubits in Silicon

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    We report the use of novel, capacitively terminated coplanar waveguide (CPW) resonators to measure the quadratic Stark shift of phosphorus donor qubits in Si. We confirm that valley repopulation leads to an anisotropic spin-orbit Stark shift depending on electric and magnetic field orientations relative to the Si crystal. By measuring the linear Stark effect, we estimate the effective electric field due to strain in our samples. We show that in the presence of this strain, electric-field sources of decoherence can be non-negligible. Using our measured values for the Stark shift, we predict magnetic fields for which the spin-orbit Stark effect cancels the hyperfine Stark effect, suppressing decoherence from electric-field noise. We discuss the limitations of these noise-suppression points due to random distributions of strain and propose a method for overcoming them

    ESR measurements of phosphorus dimers in isotopically enriched 28Si silicon

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    Dopants in silicon have been studied for many decades using optical and electron spin resonance (ESR) spectroscopy. Recently, new features have been observed in the spectra of dopants in isotopically enriched 28Si since the reduced inhomogeneous linewidth in this material improves spectral resolution. With this in mind, we measured ESR on exchange coupled phosphorus dimers in 28Si and report two results. First, a new fine structure is observed in the ESR spectrum arising from state mixing by the hyperfine coupling to the 31P nuclei, which is enhanced when the exchange energy is comparable to the Zeeman energy. This fine structure enables us to spectroscopically address two separate dimer sub-ensembles, the first with exchange (J) coupling ranging from 2 to 7 GHz and the second with J ranging from 6 to 60 GHz. Next, the average spin relaxation times, T1 and T2 of both dimer sub-ensembles were measured using pulsed ESR at 0.35 T. Both T1 and T2 for transitions between triplet states of the dimers were found to be identical to the relaxation times of isolated phosphorus donors in 28Si, with T2 = 4 ms at 1.7 K limited by spectral diffusion due to dipolar interactions with neighboring donor electron spins. This result, consistent with theoretical predictions, implies that an exchange coupling of 2 - 60 GHz does not limit the dimer T1 and T2 in bulk Si at the 10 ms timescale.Comment: 24 pages, 9 figure

    A low-disorder Metal-Oxide-Silicon double quantum dot

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    One of the biggest challenges impeding the progress of Metal-Oxide-Silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO2_2 interface which interferes with controllably confining single and few electrons. In this work we have engineered a low-disorder MOS quantum double-dot device with critical electron densities, i.e. the lowest electron density required to support a conducting pathway, approaching critical electron densities reported in high quality Si/SiGe devices and commensurate with the lowest critical densities reported in any MOS device. Utilizing a nearby charge sensor, we show that the device can be tuned to the single-electron regime where charging energies of ≈\approx8 meV are measured in both dots, consistent with the lithographic size of the dot. Probing a wide voltage range with our quantum dots and charge sensor, we detect three distinct electron traps, corresponding to a defect density consistent with the ensemble measured critical density. Low frequency charge noise measurements at 300 mK indicate a 1/ff noise spectrum of 3.4 μ\mueV/Hz1/2^{1/2} at 1 Hz and magnetospectroscopy measurements yield a valley splitting of 110±\pm26 μ\mueV. This work demonstrates that reproducible MOS spin qubits are feasible and represents a platform for scaling to larger qubit systems in MOS.Comment: 16 pages, 5 figure

    Impact of single-particle compressibility on the fluid-solid phase transition for ionic microgel suspensions

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    We study ionic microgel suspensions composed of swollen particles for various single-particle stiffnesses. We measure the osmotic pressure π\pi of these suspensions and show that it is dominated by the contribution of free ions in solution. As this ionic osmotic pressure depends on the volume fraction of the suspension ϕ\phi, we can determine ϕ\phi from π\pi, even at volume fractions so high that the microgel particles are compressed. We find that the width of the fluid-solid phase coexistence, measured using ϕ\phi, is larger than its hard-sphere value for the stiffer microgels that we study and progressively decreases for softer microgels. For sufficiently soft microgels, the suspensions are fluid-like, irrespective of volume fraction. By calculating the dependence on ϕ\phi of the mean volume of a microgel particle, we show that the behavior of the phase-coexistence width correlates with whether or not the microgel particles are compressed at the volume fractions corresponding to fluid-solid coexistence.Comment: 5 pages, 3 figure

    Addressing spin transitions on 209Bi donors in silicon using circularly-polarized microwaves

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    Over the past decade donor spin qubits in isotopically enriched 28^{28}Si have been intensely studied due to their exceptionally long coherence times. More recently bismuth donor electron spins have become popular because Bi has a large nuclear spin which gives rise to clock transitions (first-order insensitive to magnetic field noise). At every clock transition there are two nearly degenerate transitions between four distinct states which can be used as a pair of qubits. Here it is experimentally demonstrated that these transitions are excited by microwaves of opposite helicity such that they can be selectively driven by varying microwave polarization. This work uses a combination of a superconducting coplanar waveguide (CPW) microresonator and a dielectric resonator to flexibly generate arbitrary elliptical polarizations while retaining the high sensitivity of the CPW

    Spin relaxation and coherence times for electrons at the Si/SiO2 interface

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    While electron spins in silicon heterostructures make attractive qubits, little is known about the coherence of electrons at the Si/SiO2 interface. We report spin relaxation (T1) and coherence (T2) times for mobile electrons and natural quantum dots at a 28Si/SiO2 interface. Mobile electrons have short T1 and T2 of 0.3 us at 5 K. In line with predictions, confining electrons and cooling increases T1 to 0.8 ms at 350 mK. In contrast, T2 for quantum dots is around 10 us at 350 mK, increasing to 30 us when the dot density is reduced by a factor of two. The quantum dot T2 is shorter than T1, indicating that T2 is not controlled by T1 at 350 mK but is instead limited by an extrinsic mechanism. The evidence suggests that this extrinsic mechanism is an exchange interaction between electrons in neighboring dots.Comment: Extended with more experiments and rewritten. 6 pages, 5 figures, to be submitted to Phys. Rev.

    Developments in electromagnetic tomography instrumentation.

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    A new EMT sensor and instrumentation is described which combines the best features of previous systems and has a modular structure to allow for future system expansion and development

    Spin Coherence and 14^{14}N ESEEM Effects of Nitrogen-Vacancy Centers in Diamond with X-band Pulsed ESR

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    Pulsed ESR experiments are reported for ensembles of negatively-charged nitrogen-vacancy centers (NV−^-) in diamonds at X-band magnetic fields (280-400 mT) and low temperatures (2-70 K). The NV−^- centers in synthetic type IIb diamonds (nitrogen impurity concentration <1<1~ppm) are prepared with bulk concentrations of 2⋅10132\cdot 10^{13} cm−3^{-3} to 4⋅10144\cdot 10^{14} cm−3^{-3} by high-energy electron irradiation and subsequent annealing. We find that a proper post-radiation anneal (1000∘^\circC for 60 mins) is critically important to repair the radiation damage and to recover long electron spin coherence times for NV−^-s. After the annealing, spin coherence times of T2=0.74_2 = 0.74~ms at 5~K are achieved, being only limited by 13^{13}C nuclear spectral diffusion in natural abundance diamonds. At X-band magnetic fields, strong electron spin echo envelope modulation (ESEEM) is observed originating from the central 14^{14}N nucleus. The ESEEM spectral analysis allows for accurate determination of the 14^{14}N nuclear hypefine and quadrupole tensors. In addition, the ESEEM effects from two proximal 13^{13}C sites (second-nearest neighbor and fourth-nearest neighbor) are resolved and the respective 13^{13}C hyperfine coupling constants are extracted.Comment: 10 pages, 5 figure
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