477 research outputs found

    Evolution of two-gap behavior of the superconductor FeSe_1-x

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    The superfluid density, \rho_s, of the iron chalcogenide superconductor, FeSe_1-x, was studied as a function of pressure by means of muon-spin rotation. The zero-temperature value of \rho_s increases with increasing transition temperature T_c (increasing pressure) following the tendency observed for various Fe-based and cuprate superconductors. The analysis of \rho_s(T) within the two-gap scheme reveals that the effect on both, T_c and \rho_s(0), is entirely determined by the band(s) where the large superconducting gap develops, while the band(s) with the small gap become practically unaffected.Comment: 5 pages, 3 figure

    Magnetic order and spin dynamics across a ferromagnetic quantum critical point: μ\muSR investigations of YbNi4_4(P1x_{1-x}Asx_x)2_2

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    In the quasi-1D heavy-fermion system YbNi4_4(P1x_{1-x}Asx_x)2_2 the presence of a ferromagnetic (FM) quantum critical point (QCP) at xcx_c 0.1\approx 0.1 with unconventional quantum critical exponents in the thermodynamic properties has been recently reported. Here, we present muon-spin relaxation (μ\muSR) experiments on polycrystals of this series to study the magnetic order and the low energy 4ff-electronic spin dynamics across the FM QCP. The zero field μ\muSR measurements on pure YbNi4_4(P2_{2} proved static long range magnetic order and suggested a strongly reduced ordered Yb moment of about 0.04μB\mu_B. With increasing As substitution the ordered moment is reduced by half at x=0.04x = 0.04 and to less than 0.005 μB\mu_B at x=0.08x=0.08. The dynamic behavior in the μ\muSR response show that magnetism remains homogeneous upon As substitution, without evidence for disorder effect. In the paramagnetic state across the FM QCP the dynamic muon-spin relaxation rate follows 1/T1TTnT_{1}T\propto T^{-n} with 1.01±0.04n1.13±0.061.01 \pm 0.04 \leq n \leq 1.13 \pm 0.06. The critical fluctuations are very slow and are even becoming slower when approaching the QCP.Comment: 6 pages, 4 figure

    Formation of hydrogen impurity states in silicon and insulators at low implantation energies

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    The formation of hydrogen-like muonium (Mu) has been studied as a function of implantation energy in intrinsic Si, thin films of condensed van der Waals gases (N2, Ne, Ar, Xe), fused and crystalline quartz and sapphire. By varying the initial energy of positive muons (mu+) between 1 and 30 keV the number of electron-hole pairs generated in the ionization track of the mu+ can be tuned between a few and several thousand. The results show the strong suppression of the formation of those Mu states that depend on the availability of excess electrons. This indicates, that the role of H-impurity states in determining electric properties of semiconductors and insulators depends on the way how atomic H is introduced into the material.Comment: 4 pages, 4 enscapulated postscript figures, uses revtex4 twocolumn style to be published in Physical Review Letter

    The new versatile general purpose surface-muon instrument (GPS) based on silicon photomultipliers for μ{\mu}SR measurements on a continuous-wave beam

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    We report on the design and commissioning of a new spectrometer for muon-spin relaxation/rotation studies installed at the Swiss Muon Source (Sμ\muS) of the Paul Scherrer Institute (PSI, Switzerland). This new instrument is essentially a new design and replaces the old general-purpose surface-muon instrument (GPS) which has been for long the workhorse of the μ\muSR user facility at PSI. By making use of muon and positron detectors made of plastic scintillators read out by silicon photomultipliers (SiPMs), a time resolution of the complete instrument of about 160 ps (standard deviation) could be achieved. In addition, the absence of light guides, which are needed in traditionally built μ\muSR instrument to deliver the scintillation light to photomultiplier tubes located outside magnetic fields applied, allowed us to design a compact instrument with a detector set covering an increased solid angle compared to the old GPS.Comment: 11 pages, 11 figure

    High temperature ferromagnetism of Li-doped vanadium oxide nanotubes

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    The nature of a puzzling high temperature ferromagnetism of doped mixed-valent vanadium oxide nanotubes reported earlier by Krusin-Elbaum et al., Nature 431 (2004) 672, has been addressed by static magnetization, muon spin relaxation, nuclear magnetic and electron spin resonance spectroscopy techniques. A precise control of the charge doping was achieved by electrochemical Li intercalation. We find that it provides excess electrons, thereby increasing the number of interacting magnetic vanadium sites, and, at a certain doping level, yields a ferromagnetic-like response persisting up to room temperature. Thus we confirm the surprising previous results on the samples prepared by a completely different intercalation method. Moreover our spectroscopic data provide first ample evidence for the bulk nature of the effect. In particular, they enable a conclusion that the Li nucleates superparamagnetic nanosize spin clusters around the intercalation site which are responsible for the unusual high temperature ferromagnetism of vanadium oxide nanotubes.Comment: with some amendments published in Europhysics Letters (EPL) 88 (2009) 57002; http://epljournal.edpsciences.or

    Microscopic Evidence of Spin State Order and Spin State Phase Separation in Layered Cobaltites RBaCo2O5.5 with R=Y, Tb, Dy, and Ho

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    We report muon spin relaxation measurements on the magnetic structures of RBaCo_2O_5.5 with R=Y, Tb, Dy, and Ho. Three different phases, one ferrimagnetic and two antiferromagnetic, are identified below 300 K. They consist of different ordered spin state arrangements of high-, intermediate-, and low-spin Co^3+ of CoO_6 octahedra. Phase separation into well separated regions with different spin state order is observed in the antiferromagnetic phases. The unusual strongly anisotropic magnetoresistance and its onset at the FM-AFM phase boundary is explained.Comment: 4 pages, accepted for publication in Phys. Rev. Let
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