Local Deformation-Controlled Fast Directional Metal Outflow in Metal/Ceramic Nanolayer Sandwiches upon Low Temperature Annealing

Precise nanoindentation on AlN/Cu/AlN nanolayer sandwiches has been conducted by using an atomic force microscope to promote fast and directional metal (Cu) outflow upon heating at low temperatures. Local plastic deformation during indentation results in the generation of high defect densities and stress gradients, which not only effectively reduce the activation energies for fast in-plane diffusion but also direct the in-plane transport of confined Cu to the indent location. In addition, a steep chemical potential gradient of O will be established across the AlN barrier upon exposure to air, which drives fast outward diffusion of Cu along defective pathways in the top AlN layer at the indent location. Selective and fast Cu metal outflow can thus be achieved at the indent locations upon annealing at a relatively low temperature of 350 °C for 5 min in air. The microstructures and phase boundaries of the AlN barrier and confined Cu nanolayers are unperturbed outside the plastically deformed region and remain metastable after annealing at 350 °C. By changing the surface processing modes, patterned nanoparticles and isolated nanowire structures can be fabricated straightforwardly. Such local deformation-controlled directional mass transport phenomena can be utilized to manipulate materials down to the atomic scale for designing functional nanoarchitectures for nanophotonic and nanoelectronic applications

Plasmon-Induced Heterointerface Thinning for Schottky Barrier Modification of Core/Shell SiC/SiO₂ Nanowires

In this work, plasmon-induced heterointerface thinning for Schottky barrier modification of core/shell SiC/SiO2 nanowires is conducted by femtosecond (fs) laser irradiation. The incident energy of polarized fs laser (50 fs, 800 nm) is confined in the SiO2 shell of the nanowire due to strong plasmonic localization in the region of the electrode–nanowire junction. With intense nonlinear absorption in SiO2, the thickness of the SiO2 layer can be thinned in a controllable way. The tuning of the SiO2 barrier layer allows the promotion of electron transportation at the electrode–nanowire interface. The switching voltage of the rectifying junction made by the SiC/SiO2 nanowire can be significantly tuned from 15.7 to 1 V. When selectively thinning at source and drain electrodes and leaving the SiO2 barrier layer at the gate electrode intact, a metal/oxide/semiconductor (MOS) device is fabricated with low leakage current. This optically controlled interfacial engineering technology should be applicable for MOS components and other heterogeneous integration structures

Ultralong, High Aspect Ratio Graphene Nanoribbon Arrays Fabricated by Laser Interference Lithography: Implications for Integrated Nanocircuits

Ultralong graphene nanoribbons (GNRs) have drawn much attention in the field of high performance nanoelectronics. In this work, a mask-free ultrafast laser lithography method is demonstrated for the mass production of ultralong GNR arrays with an intact carbon network. The longest GNR reaches ∼42 μm with a width of ∼400 nm. The orientation of the as-received GNR arrays is always parallel to the incident laser polarization direction. Original carbon network structures of remaining GNRs are preserved, which are ascribed to the precise energy injection and selective nanoablation in graphene flakes. The formation of large-scale GNR arrays is mainly determined by the interference between the incident laser and the stimulated transverse electric mode surface plasmon (TE-SPs) wave. The excitation of the TE-SPs wave prefers to be triggered at the geometrical fluctuations on ablated graphene surfaces as well as the interface with a large discrepancy of dielectric permittivity (e.g., graphene and SiO2). With the initial generation of the nanoablated groove on the surface, the interference between TE-SPs waves and incident laser beams further extends to the far end with periodic intervals, which results in the continuous formation of GNRs. This ultrafast laser-induced periodic lithography may provide an alternative for ultralong and high aspect ratio GNR array fabrication, which is promising in high performance nanodevice development

Femtosecond Laser Irradiation-Mediated MoS₂–Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors

2D materials exhibit intriguing electrical and optical properties, making them promising candidates for next-generation nanoelectronic devices. However, the high contact resistance of 2D materials to electrode material often limits the ultimate performance and potential of 2D materials and devices. In this work, we demonstrate a localized femtosecond (fs) laser irradiation process to substantially minimize the resistance of MoS2–metal contacts. A reduction of the contact resistance exceeding three orders of magnitude is achieved for mechanically exfoliated MoS2, which remarkably improves the overall FET performance. The underlying mechanisms of resistance reduction are the removal of organic contamination induced by the transfer process, as well as the lowering of Schottky barrier resistance (RSB) attributed to interface Fermi level pinning (FLP) by Au diffusion, and the lowering of interlayer resistance (Rint) due to interlayer coupling enhancement by Au intercalation under fs laser irradiation. By taking advantage of the improved MoS2–metal contact behavior, a high-performance MoS2 photodetector was developed with a photoresponsivity of 68.8 A W–1 at quite a low Vds of 0.5 V, which is ∼80 times higher than the pristine multilayer photodetector. This contamination-free, site-specific, and universal photonic fabrication technique provides an effective tool for the integration of complex 2D devices, and the mechanism of MoS2–metal interface modification reveals a new pathway to engineer the 2D material–metal interface

Cooperative Bilayer of Lattice-Disordered Nanoparticles as Room-Temperature Sinterable Nanoarchitecture for Device Integrations

Decreasing the interconnecting temperature is essential for 3D and heterogeneous device integrations, which play indispensable roles in the coming era of “more than Moore”. Although nanomaterials exhibit a decreased onset temperature for interconnecting, such an effect is always deeply impaired because of organic additives in practical integrations. Meanwhile, current organic-free integration strategies suffer from roughness and contaminants at the bonding interface. Herein, a novel bilayer nanoarchitecture simultaneously overcomes the drawbacks of organics and is highly tolerant to interfacial morphology, which exhibits universal applicability for device-level integrations at even room temperature, with the overall performance outperforming most counterparts reported. This nanoarchitecture features a loose nanoparticle layer with unprecedented deformability for interfacial gap-filling, and a compact one providing firm bonding with the component surface. The two distinct nanoparticle layers cooperatively enhance the interconnecting performance by 73–357%. Apart from the absence of organics, the internal abundant lattice disorders profoundly accelerate the interconnecting process, which is supported by experiments and molecular dynamics simulation. This nanoarchitecture is successfully demonstrated in diversified applications including paper-based light-emitting diodes, Cu–Cu micro-bonding, and SiC power modules. The strategy proposed here can open a new paradigm for device integrations and provide a fresh understanding on interconnecting mechanisms

DataSheet1_Aerosol-Assisted Deposition for TiO2 Immobilization on Photocatalytic Fibrous Filters for VOC Degradation.PDF

Atomization and spraying are well-established methods for the production of submicrometer- and micrometer- sized powders. In addition, they could be of interest to the immobilization of photocatalytic nanoparticles onto supports because they enable the formation of microporous films with photocatalytic activity. Here, we provide a comparison of aerosol-assisted immobilization methods, such as spray-drying (SD), spray atomization (SA), and spray gun (SG), which were used for the deposition of TiO2 dispersions onto fibrous filter media. The morphology, microstructure, and electronic properties of the structures with deposited TiO2 were characterized by SEM and TEM, BET and USAXS, and UV-Vis spectrometry, respectively. The photocatalytic performances of the functionalized filters were evaluated and compared to the benchmark dip-coating method. Our results showed that the SG and SA immobilization methods led to the best photocatalytic and operational performance for the degradation of toluene, whereas the SD method showed the lowest degradation efficiency and poor stability of coating. We demonstrated that TiO2 sprays using the SG and SA methods with direct deposition onto filter media involving dispersed colloidal droplets revealed to be promising alternatives to the dip-coating method owing to the ability to uniformly cover the filter fibers. In addition, the SA method allowed for fast and simple control of the coating thickness as the dispersed particles were continuously directed onto the filter media without the need for repetitive coatings, which is common for the SG and dip-coating methods. Our study highlighted the importance of the proper immobilization method for the efficient photocatalytic degradation of VOCs.</p