203,380 research outputs found

    Effect of spin relaxations on the spin mixing conductances for a bilayer structure

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    The spin current can result in a spin-transfer torque in the normal-metal(NM)|ferromagnetic-insulator(FMI) or normal-metal(NM)|ferromagnetic-metal(FMM) bilayer. In the earlier study on this issue, the spin relaxations were ignored or introduced phenomenologically. In this paper, considering the FMM or FMI with spin relaxations described by a non-Hermitian Hamiltonian, we derive an effective spin-transfer torque and an effective spin mixing conductance in the non-Hermitian bilayer. The dependence of the effective spin mixing conductance on the system parameters (such as insulating gap, \textit{s-d} coupling, and layer thickness) as well as the relations between the real part and the imaginary part of the effective spin mixing conductance are given and discussed. We find that the effective spin mixing conductance can be enhanced in the non-Hermitian system. This provides us with the possibility to enhance the spin mixing conductance

    Geometric phases in a scattering process

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    The study of geometric phase in quantum mechanics has so far be confined to discrete (or continuous) spectra and trace preserving evolutions. Consider only the transmission channel, a scattering process with internal degrees of freedom is neither a discrete spectrum problem nor a trace preserving process. We explore the geometric phase in a scattering process taking only the transmission process into account. We find that the geometric phase can be calculated by the some method as in an unitary evolution. The interference visibility depends on the transmission amplitude. The dependence of the geometric phase on the barrier strength and the spin-spin coupling constant is also presented and discussed.Comment: 4 pages, 5 figure

    Photonic band structure of ZnO photonic crystal slab laser

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    We recently reported on the first realization of ultraviolet photonic crystal laser based on zinc oxide [Appl. Phys. Lett. {\bf 85}, 3657 (2004)]. Here we present the details of structural design and its optimization. We develop a computational super-cell technique, that allows a straightforward calculation of the photonic band structure of ZnO photonic crystal slab on sapphire substrate. We find that despite of small index contrast between the substrate and the photonic layer, the low order eigenmodes have predominantly transverse-electric (TE) or transverse-magnetic (TM) polarization. Because emission from ZnO thin film shows strong TE preference, we are able to limit our consideration to TE bands, spectrum of which can possess a complete photonic band gap with an appropriate choice of structure parameters. We demonstrate that the geometry of the system may be optimized so that a sizable band gap is achieved.Comment: 8 pages, 7 figure

    Evolution of magnetic properties in the vicinity of the Verwey transition in Fe3O4 thin films

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    We have systematically studied the evolution of magnetic properties, especially the coercivity and the remanence ratio in the vicinity of the Verwey transition temperature (TV ), of high-quality epitaxial Fe3O4 thin films grown on MgO (001), MgAl2O4 (MAO) (001), and SrTiO3 (STO) (001) substrates. We observed rapid change of magnetization, coercivity, and remanence ratio at TV , which are consistent with the behaviors of resistivity versus temperature [\r{ho}(T )] curves for the different thin films. In particular, we found quite different magnetic behaviors for the thin films onMgOfrom those onMAOand STO, inwhich the domain size and the strain state play very important roles. The coercivity is mainly determined by the domain size but the demagnetization process is mainly dependent on the strain state. Furthermore, we observed a reversal of remanence ratio at TV with thickness for the thin films grown on MgO: from a rapid enhancement for 40-nm- to a sharp drop for 200-nm-thick film, and the critical thickness is about 80 nm. Finally, we found an obvious hysteretic loop of coercivity (or remanence ratio) with temperature around TV , corresponding to the hysteretic loop of the \r{ho}(T ) curve, in Fe3O4 thin film grown on MgO
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