Adatoms in graphene as a source of current polarization: Role of the local magnetic moment

We theoretically investigate spin-resolved currents flowing in large-area graphene, with and without defects, doped with single atoms of noble metals (Cu, Ag and Au) and 3d-transition metals (Mn,Fe,Co and Ni). We show that the presence of a local magnetic moment is a necessary but not sufficient condition to have a non zero current polarization. An essential requirement is the presence of spin-split localized levels near the Fermi energy that strongly hybridize with the graphene pi-bands. We also show that a gate potential can be used to tune the energy of these localized levels, leading to an external way to control the degree of spin-polarized current without the application of a magnetic field.Comment: 7 pages, 6 figure

Spin Caloritronics in graphene with Mn

We show that graphene with Mn adatoms trapped at single vacancies feature spin-dependent Seebeck effect, thus enabling the use of this material for spin caloritronics. A gate potential can be used to tune its thermoelectric properties in a way it presents either a total spin polarized current, flowing in one given direction, or currents for both spins flowing in opposite directions without net charge transport. Moreover, we show that the thermal magnetoresistance can be tuned between $-100\%$ and $+100\%$ by varying agate potential.Comment: The following article has been submitted to Applied Physics Letters. After it is published, it will be found at (http://apl.aip.org/

Topological Phases in Triangular Lattices of Ru Adsorbed on Graphene: ab-initio calculations

We have performed an ab initio investigation of the electronic properties of the graphene sheet adsorbed by Ru adatoms (Ru/graphene). For a particular set of triangular arrays of Ru adatoms, we find the formation of four (spin-polarized) Dirac cones attributed to a suitable overlap between two hexagonal lattices: one composed by the C sites of the graphene sheet, and the other formed by the surface potential induced by the Ru adatoms. Upon the presence of spin-orbit coupling (SOC) nontrivial band gaps take place at the Dirac cones promoting several topological phases. Depending on the Ru concentration, the system can be topologically characterized among the phases i) Quantum Spin Hall (QSH), ii) Quantum Anomalous Hall (QAH), iii) metal iv) or trivial insulator. For each concentration, the topological phase is characterized by the ab-initio calculation of the Chern number.Comment: 8 pages, 6 figure

Mimicking Nanoribbon Behavior Using a Graphene Layer on SiC

We propose a natural way to create quantum-confined regions in graphene in a system that allows large-scale device integration. We show, using first-principles calculations, that a single graphene layer on a trenched region of $[000\bar{1}]$ $SiC$ mimics i)the energy bands around the Fermi level and ii) the magnetic properties of free-standing graphene nanoribbons. Depending on the trench direction, either zigzag or armchair nanoribbons are mimicked. This behavior occurs because a single graphene layer over a $SiC$ surface loses the graphene-like properties, which are restored solely over the trenches, providing in this way a confined strip region.Comment: 4 pages, 4 figure

Simple implementation of complex functionals: scaled selfconsistency

We explore and compare three approximate schemes allowing simple implementation of complex density functionals by making use of selfconsistent implementation of simpler functionals: (i) post-LDA evaluation of complex functionals at the LDA densities (or those of other simple functionals); (ii) application of a global scaling factor to the potential of the simple functional; and (iii) application of a local scaling factor to that potential. Option (i) is a common choice in density-functional calculations. Option (ii) was recently proposed by Cafiero and Gonzalez. We here put their proposal on a more rigorous basis, by deriving it, and explaining why it works, directly from the theorems of density-functional theory. Option (iii) is proposed here for the first time. We provide detailed comparisons of the three approaches among each other and with fully selfconsistent implementations for Hartree, local-density, generalized-gradient, self-interaction corrected, and meta-generalized-gradient approximations, for atoms, ions, quantum wells and model Hamiltonians. Scaled approaches turn out to be, on average, better than post-approaches, and unlike these also provide corrections to eigenvalues and orbitals. Scaled selfconsistency thus opens the possibility of efficient and reliable implementation of density functionals of hitherto unprecedented complexity.Comment: 12 pages, 1 figur

Electronic transport properties of MoS2_2 nanoribbons embedded on butadiene solvent

Transition metal dichalcogenides (TMDCs) are promising materials for applications in nanoelectronics and correlated fields, where their metallic edge states play a fundamental role in the electronic transport. In this work, we investigate the transport properties of MoS$_2$ zigzag nanoribbons under a butadiene (C$_4$H$_6$) atmosphere, as this compound has been used to obtain MoS$_2$ flakes by exfoliation. We use density functional theory combined with non-equilibrium Green's function techniques, in a methodology contemplating disorder and different coverages. Our results indicate a strong modulation of the TMDC electronic transport properties driven by butadiene molecules anchored at their edges, producing the suppression of currents due to a backscattering process. Our results indicate a high sensitivity of the TMDC edge states. Thus, the mechanisms used to reduce the dimensionality of MoS$_2$ considerably modify its transport properties

Bilayer graphene dual-gate nanodevice: An ab initio simulation

We study the electronic transport properties of a dual-gated bilayer graphene nanodevice via first principles calculations. We investigate the electric current as a function of gate length and temperature. Under the action of an external electrical field we show that even for gate lengths up 100 Ang., a non zero current is exhibited. The results can be explained by the presence of a tunneling regime due the remanescent states in the gap. We also discuss the conditions to reach the charge neutrality point in a system free of defects and extrinsic carrier doping