Charge Carrier Transport in Metal Phthalocyanine Based Disordered Thin Films

The charge carrier transport in metal phthallocyanine based disordered thin films has been investigated. Charge carrier mobility in these disordered thin films strongly depends on the electric field and temperature due to hopping conduction. The applicability of two different Gaussian disorder models has been compared and evaluated for charge carrier transport using simple experimental results and based on our extensive analysis, it has been found that spatial and energetic correlation is important in explaining the electrical transport in these organic semiconductors

Interfaces of correlated electron systems: Proposed mechanism for colossal electroresistance

Mott's metal-insulator transition at an interface due to band bending is studied by the density matrix renormalization group (DMRG). We show that the result can be recovered by a simple modification of the conventional Poisson's equation approach used in semi-conductor heterojunctions. A novel mechanism of colossal electroresistance is proposed, which incorporates the hysteretic behavior of the transition in higher dimensions.Comment: 5 pages, 3 figures, title change

Periodicity-dependence of the ferroelectric properties in BiFeO3/SrTiO3 multiferroic superlattices

Artificial superlattices of (BiFeO3)m(SrTiO3)m (m= 1 to 10 unit cells) consisting of multiferroic BiFeO3 and insulating SrTiO3 layers were fabricated on (100)-oriented SrTiO3 substrates by pulsed laser ablation. The remnant polarization and leakage current behavior were studied varying the periodicity (8-80A) of the superlattice. The leakage current was reduced by few orders of magnitude on increase of periodicity compared to single layer BiFeO3 thin films. Reduced leakage and intrinsic polarization hysteresis was observed and was confirmed by PUND analysis for periodicities in the range 20-60A. The leakage current was observed to be dominated by space charge limited conductionComment: Submitted to Applied Physics Letter

Effect of excited states and applied magnetic fields on the measured hole mobility in an organic semiconductor

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An Analytic Solution of Hydrodynamic Equations with Source Terms in Heavy Ion Collisions

The energy and baryon densities in heavy ion collisions are estimated by analytically solving a 1+1 dimensional hydrodynamical model with source terms. Particularly, a competition between the energy and baryon sources and the expansion of the system is discussed in detail.Comment: LaTeX2e, 7 pages, 4 postscript figures, submitted to Int. J. Mod. Phys.

Self-consistent model of unipolar transport in organic semiconductor diodes: accounting for a realistic density-of-states distribution

A self-consistent, mean-field model of charge-carrier injection and unipolar transport in an organic semiconductor diode is developed utilizing the effective transport energy concept and taking into account a realistic density-of-states distribution as well as the presence of trap states in an organic material. The consequences resulting from the model are discussed exemplarily on the basis of an indium tin oxide/organic semiconductor/metallic conductor structure. A comparison of the theory to experimental data of a unipolar indium tin oxide/poly-3-hexyl-thiophene/Al device is presented.Comment: 6 pages, 2 figures; to be published in Journal of Applied Physic

Anomalous change in leakage and displacement currents after electrical poling on lead-free ferroelectric ceramics

We report the polarization, displacement current and leakage current behavior of a trivalent nonpolar cation Al cation substituted lead free ferroelectric NBT-BT electroceramics with tetragonal phase and P4mm space group symmetry. Nearly three orders of magnitude decrease in leakage current were observed under electrical poling, which significantly improves microstructure, polarization, and displacement current. Effective poling neutralizes the domain pinning, traps charges at grain boundaries and fills oxygen vacancies with free charge carriers in matrix, thus saturated macroscopic polarization in contrast to that in upoled samples. E-poling changes bananas type polarization loops to real ferroelectric loops.Comment: 18 pages, 5 figure

Bias-Dependent Generation and Quenching of Defects in Pentacene

We describe a defect in pentacene single crystals that is created by bias stress and persists at room temperature for an hour in the dark but only seconds with 420nm illumination. The defect gives rise to a hole trap at Ev + 0.38eV and causes metastable transport effects at room temperature. Creation and decay rates of the hole trap have a 0.67eV activation energy with a small (108 s-1) prefactor, suggesting that atomic motion plays a key role in the generation and quenching process.Comment: 10 pages, 3 figure

Polyfluorene as a model system for space-charge-limited conduction

Ethyl-hexyl substituted polyfluorene (PF) with its high level of molecular disorder can be described very well by one-carrier space-charge-limited conduction for a discrete set of trap levels with energy $\sim$ 0.5 eV above the valence band edge. Sweeping the bias above the trap-filling limit in the as-is polymer generates a new set of exponential traps, which is clearly seen in the density of states calculations. The trapped charges in the new set of traps have very long lifetimes and can be detrapped by photoexcitation. Thermal cycling the PF film to a crystalline phase prevents creation of additional traps at higher voltages.Comment: 13 pages, 4 figures. Physical Review B (accepted, 2007