39 research outputs found
A new high speed charge and high efficiency Li-Ion battery charger interface using pulse control technique
A new Li-Ion battery charger interface (BCI) using pulse control (PC) technique is designed and analyzed in this paper. Thanks to the use of PC technique, the main standards of the Li-Ion battery charger, i.e. fast charge, small surface area and high efficiency, are achieved. The proposed charger achieves full charge in forty-one minutes passing by the constant current (CC) charging mode which also included the start-up and the constant voltage mode (CV) charging mode. It designed, simulated and layouted which occupies a small size area 0.1 mm2 by using Taiwan Semiconductor Manufacturing Company 180 nm complementary metal oxide semi-conductor technology (TSMC 180 nm CMOS) technology in Cadence Virtuoso software. The battery voltage VBAT varies between 2.9 V to 4.35 V and the maximum battery current IBAT is 2.1 A in CC charging mode, according to a maximum input voltage VIN equal 5 V. The maximum charging efficiency reaches 98%
A trade-off design of microstrip broadband power amplifier for UHF applications
In this paper, the design of a Broadband Power Amplifier for UHF applications is presented. The proposed BPA is based on ATF13876 Agilent active device. The biasing and matching networks both are implemented by using microstrip transmission lines. The input and output matching circuits are designed by combining two broadband matching techniques: a binomial multi-section quarter wave impedance transformer and an approximate transformation of previously designed lumped elements. The proposed BPA shows excellent performances in terms of impedance matching, power gain and unconditionally stability over the operating bandwidth ranging from 1.2 GHz to 3.3 GHz. At 2.2 GHz, the large signal simulation shows a saturated output power of 18.875 dBm with an output 1-dB compression point of 6.5 dBm of input level and a maximum PAE of 36.26%
Design of L-S band broadband power amplifier using microstip lines
This contribution introduces a novel broadband power amplifier design, operating in the frequency band ranging from 1.5 GHz to 3 GHz which cover the mainstream applications running in L and S bands. Both matching and biasing networks are synthesized by using microstrip transmission lines. In order to provide a wide bandwidth, two broadband matching techniques are deployed for this purpose, the first technique is an approximate transformation of a previously designed lumped elements matching networks into microstrip matching circuits, and the second technique is a binomial multi-sections quarter wave impedance transformer. The proposed work is based on ATF-13786 active device. The simulation results depict a maximum power gain of 16.40 dB with an excellent input and output matching across 1.5 GHz ~ 3 GHz. At 2.2 GHz, the introduced BPA achieves a saturated output power of 16.26 dBm with a PAE of 21.74%, and a 1-dB compression point of 4.5 dBm input power level. The whole circuitry is unconditionally stable over the overall bandwidth. By considering the broadband matching, the proposed design compares positively with the most recently published BPA
Coplanar waveguide low pass filter based on square complementary split ring resonator with wide rejection
In this paper, we present a novel coplanar waveguide low pass filter (LPF)structure based on the use of square complementary split ring resonators (CSRRs) in order to enhance the performances of a low pass filter. Especially, to enlarge the bandwidth of the LPF, the insertion losses and to increase the rejection of the LPF. The CSRRs are optimised and inserted periodically along the center conductor of the CPW line with a CPW ground integrating stubs permitting to enlarge the bandwidth. The simulation results of this filter show a -3 dB cut-off frequency equal to fc = 5.28 GHz. The designed filter has a good rejection in the stop band which below -20 dB and presents a good insertion loss in the bandwidth. The proposed filter has been fabricated and tested which give a good agreement between simulation and measurement results, the whole dimensions of the validated filter are 35.48x21.16 mm2. The originality of this work is the wide rejection band and the miniature dimensions
A Real-Time Thermal Monitoring System Intended for Embedded Sensors Interfaces
RÉSUMÉ: This paper proposes a real-time thermal monitoring method using embedded integrated sensor interfaces dedicated to industrial integrated system applications. Industrial sensor interfaces are complex systems that involve analog and mixed signals, where several parameters can influence their performance. These include the presence of heat sources near sensitive integrated circuits, and various heat transfer phenomena need to be considered. This creates a need for real-time thermal monitoring and management. Indeed, the control of transient temperature gradients or temperature differential variations as well as the prediction of possible induced thermal shocks and stress at early design phases of advanced integrated circuits and systems are essential. This paper addresses the growing requirements of microelectronics applications in several areas that experience fast variations in high-power density and thermal gradient differences caused by the implementation of different systems on the same chip, such as the new-generation 5G circuits. To mitigate adverse thermal effects, a real-time prediction algorithm is proposed and validated using the MCUXpresso tool applied to a Freescale embedded sensor board to monitor and predict its temperature profile in real time by programming the embedded sensor into the FRDM-KL26Z board. Based on discrete temperature measurements, the embedded system is used to predict, in advance, overheating situations in the embedded integrated circuit (IC). These results confirm the peak detection capability of the proposed algorithm that satisfactorily predicts thermal peaks in the FRDM-KL26Z board as modeled with a finite element thermal analysis tool (the Numerical Integrated elements for System Analysis (NISA) tool), to gauge the level of local thermomechanical stresses that may be induced. In this paper, the FPGA implementation and comparison measurements are also presented. This work provides a solution to the thermal stresses and local system overheating that have been a major concern for integrated sensor interface designers when designing integrated circuits in various high-performance technologies or harsh environment
Propagation of nonlinear waves in bi-inductance nonlinear transmission lines
We consider a one-dimensional modified complex Ginzburg-Landau equation, which governs
the dynamics of matter waves propagating in a discrete bi-inductance nonlinear
transmission line containing a finite number of cells. Employing an extended Jacobi
elliptic functions expansion method, we present new exact analytical solutions which
describe the propagation of periodic and solitary waves in the considered network
Dynamics of matter-wave solitons in Bose-Einstein condensates with time-dependent scattering length and complex potentials
We investigate the dynamics of matter-wave solitons in the one-dimensional (1-D)
Gross-Pitaevskii (GP) equation describing Bose-Einstein condensates (BECs) with
time-dependent scattering length in varying trapping potentials with feeding/loss term. By
performing a modified lens-type transformation, we reduce the GP equation into a classical
nonlinear Schrödinger (NLS) equation with distributed coefficients and find its integrable
condition. Under the integrable condition, we apply the generalized Jacobian elliptic
function method (GJEFM) and present exact analytical solutions which describe the
propagation of a bright and dark solitons in BECs. Their stability is examined using
analytic method. The obtained exact solutions show that the amplitude of bright and dark
solitons depends on the scattering length, while their motion and the total number of BEC
atoms depend on the external trapping potential. Our results also shown that the loss of
atoms can dominate the aggregation of atoms by the attractive interaction, and thus the
peak density can decrease in time despite that the strength of the attractive interaction
is increased