4,654 research outputs found
Diluted manganese on the bond-centered site in germanium
The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. Surprisingly, in addition to the expected substitutional lattice position, a large fraction of the Mn impurities occupies the bond-centered site. Corroborated by ab initio calculations, the bond-centered Mn is related to Mn-vacancy complexes. These unexpected results call for a reassessment of the theoretical studies on the electrical and magnetic behavior of Mn-doped Ge, hereby including the possible role of Mn-vacancy complexes
Phase Separation Driven by External Fluctuations
The influence of external fluctuations in phase separation processes is
analysed. These fluctuations arise from random variations of an external
control parameter. A linear stability analysis of the homogeneous state shows
that phase separation dynamics can be induced by external noise. The spatial
structure of the noise is found to have a relevant role in this phenomenon.
Numerical simulations confirm these results. A comparison with order-disorder
noise induced phase transitions is also made.Comment: 4 pages, 4 Postscript figures included in text. LaTeX (with Revtex
macros
Fast CMOS transimpedance amplifier and comparator circuit for readout of silicon strip detectors at LHC experiments
Lifshitz-Slyozov Scaling For Late-Stage Coarsening With An Order-Parameter-Dependent Mobility
The coarsening dynamics of the Cahn-Hilliard equation with order-parameter
dependent mobility, , is addressed at
zero temperature in the Lifshitz-Slyozov limit where the minority phase
occupies a vanishingly small volume fraction. Despite the absence of bulk
diffusion for , the mean domain size is found to grow as , due to subdiffusive transport of the order parameter
through the majority phase. The domain-size distribution is determined
explicitly for the physically relevant case .Comment: 4 pages, Revtex, no figure
The ATLAS Tracker Upgrade: Short Strips Detectors for the sLHC
It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN around 2018 by about an order of magnitude, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for SLHC operation. In order to cope with the order of magnitude increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. A massive R&D programme is underway to develop silicon sensors with sufficient radiation hardness. New front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown. A key issue for the upgrade is the development of silicon sensors with sufficient radiation hardness for the pixel and strip layers. We have developed planar detectors to be made on p-type wafers in a number of different designs. These prototype detectors were then produced by a leading manufacturer and irradiated to a set of fluences matched to sLHC expections. The irradiated sensors were subsequently tested wit h LHC-readout-electronics in order to study the radiation-induced degradation, and determine their performance after serious hadron irradiation of up to 1015 Neutron-equivalent. The signal suffers degradation as a function of irradiation. It is however evident that sufficient charge can still be recorded even at the highest fluence. We will give an overview of the ATLAS tracker upgrade, in particular focusing on innermost silicon strip layers. Results from a wide range of irradiated silicon detectors will be presented. We will draw conclusions on what type and design of strip detectors to employ for the upgrades of the tracking layers in the sLHC upgrades of LHC experiments
From subdiffusion to superdiffusion of particles on solid surfaces
We present a numerical and partially analytical study of classical particles
obeying a Langevin equation that describes diffusion on a surface modeled by a
two dimensional potential. The potential may be either periodic or random.
Depending on the potential and the damping, we observe superdiffusion,
large-step diffusion, diffusion, and subdiffusion. Superdiffusive behavior is
associated with low damping and is in most cases transient, albeit often long.
Subdiffusive behavior is associated with highly damped particles in random
potentials. In some cases subdiffusive behavior persists over our entire
simulation and may be characterized as metastable. In any case, we stress that
this rich variety of behaviors emerges naturally from an ordinary Langevin
equation for a system described by ordinary canonical Maxwell-Boltzmann
statistics
ATLAS silicon module assembly and qualification tests at IFIC Valencia
ATLAS experiment, designed to probe the interactions of particles emerging
out of proton proton collisions at energies of up to 14 TeV, will assume
operation at the Large Hadron Collider (LHC) at CERN in 2007. This paper
discusses the assembly and the quality control tests of forward detector
modules for the ATLAS silicon microstrip detector assembled at the Instituto de
Fisica Corpuscular (IFIC) in Valencia. The construction and testing procedures
are outlined and the laboratory equipment is briefly described. Emphasis is
given on the module quality achieved in terms of mechanical and electrical
stability.Comment: 23 pages, 38 EPS figures, uses JINST LaTeX clas
Phase-ordering of conserved vectorial systems with field-dependent mobility
The dynamics of phase-separation in conserved systems with an O(N) continuous
symmetry is investigated in the presence of an order parameter dependent
mobility M(\phi)=1-a \phi^2. The model is studied analytically in the framework
of the large-N approximation and by numerical simulations of the N=2, N=3 and
N=4 cases in d=2, for both critical and off-critical quenches. We show the
existence of a new universality class for a=1 characterized by a growth law of
the typical length L(t) ~ t^{1/z} with dynamical exponent z=6 as opposed to the
usual value z=4 which is recovered for a<1.Comment: RevTeX, 8 pages, 13 figures, to be published in Phys. Rev.
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