Superconductivity and Dirac Fermions in 112-phase Pnictides

This article reviews the status of current research on the 112-phase of pnictides. The 112-phase has gained augmented attention due to the recent discovery of high-temperature superconductivity in \cl with a maximum critical temperature \tc\sim 47\,K upon Sb substitution. The structural, magnetic, and electronic properties of \cl bear some similarities with other superconducting pnictide phases, however, the different valence states of the pnictogen and the presence of a metallic spacer layer are unique features of the 112-system. Low-temperature superconductivity which coexists with antiferromagnetic order was observed in transition metal (Ni, Pd) deficient 112-compounds like \cn, \lpb, \lps, \lns. Besides superconductivity, the presence of naturally occurring anisotropic Dirac Fermionic states were observed in the layered 112-compounds \smb, \cmb, \lab which are of significant interest for future nanoelectronics as an alternative to graphene. In these compounds, the linear energy dispersion resulted in a high magnetoresistance that stayed unsaturated even at the highest applied magnetic fields. Here, we describe various 112-type materials systems combining experimental results and theoretical predictions to stimulate further research on this less well-known member of the pnictide family.Comment: 18 pages, 20 figure

Large Deployable Reflector (LDR) feasibility study update

In 1982 a workshop was held to refine the science rationale for large deployable reflectors (LDR) and develop technology requirements that support the science rationale. At the end of the workshop, a set of LDR consensus systems requirements was established. The subject study was undertaken to update the initial LDR study using the new systems requirements. The study included mirror materials selection and configuration, thermal analysis, structural concept definition and analysis, dynamic control analysis and recommendations for further study. The primary emphasis was on the dynamic controls requirements and the sophistication of the controls system needed to meet LDR performance goals

Large two-level magnetoresistance effect in doped manganite grain boundary junctions

We performed a systematic analysis of the tunneling magnetoresistance (TMR) effect in single grain boundary junctions formed in epitaxial La(2/3)Ca(1/3)MnO(3) films deposited on SrTiO(3) bicrystals. For magnetic fields H applied parallel to the grain boundary barrier, an ideal two-level resistance switching behavior with sharp transitions is observed with a TMR effect of up to 300% at 4.2 K and still above 100% at 77 K. Varying the angle between H and the grain boundary results in differently shaped resistance vs H curves. The observed behavior is explained within a model of magnetic domain pinning at the grain boundary interface.Comment: 4 pages, 3 figures, to appear in Phys. Rev. B (Rapid Comm.

Transport anisotropy in biaxially strained La(2/3)Ca(1/3)MnO(3) thin films

Due to the complex interplay of magnetic, structural, electronic, and orbital degrees of freedom, biaxial strain is known to play an essential role in the doped manganites. For coherently strained La(2/3)Ca(1/3)MnO(3) thin films grown on SrTiO(3) substrates, we measured the magnetotransport properties both parallel and perpendicular to the substrate and found an anomaly of the electrical transport properties. Whereas metallic behavior is found within the plane of biaxial strain, for transport perpendicular to this plane an insulating behavior and non-linear current-voltage characteristics (IVCs) are observed. The most natural explanation of this anisotropy is a strain induced transition from an orbitally disordered ferromagnetic state to an orbitally ordered state associated with antiferromagnetic stacking of ferromagnetic manganese oxide planes.Comment: 5 pages, 4 figure

Transport and Noise Characteristics of Submicron High-Temperature Superconductor Grain-Boundary Junctions

We have investigated the transport and noise properties of submicron YBCO bicrystal grain-boundary junctions prepared using electron beam lithography. The junctions show an increased conductance for low voltages reminiscent of Josephson junctions having a barrier with high transmissivity. The voltage noise spectra are dominated by a few Lorentzian components. At low temperatures clear two-level random telegraph switching (RTS) signals are observable in the voltage vs time traces. We have investigated the temperature and voltage dependence of individual fluctuators both from statistical analysis of voltage vs time traces and from fits to noise spectra. A transition from tunneling to thermally activated behavior of individual fluctuators was clearly observed. The experimental results support the model of charge carrier traps in the barrier region.Comment: 4 pages, 4 figures, to be published in Appl. Phys. Let

Superconducting NdCeCuO Bicrystal Grain Boundary Josephson Junctions

We have studied the electric transport properties of symmetrical [001] tilt NdCeCuO bicrystal grain boundary Josephson junctions (GBJs) fabricated on SrTiO bicrystal substrates with misorientation angles of 24 and 36.8 degree. The superconducting properties of the NdCeCuO-GBJs are similar to those of GBJs fabricated from the hole doped high temperature superconductors (HTS). The critical current density Jc decreases strongly with increasing misorientation angle. The products of the critical current Ic and the normal resistance Rn (about 0.1 mV at 4.2 K) are small compared to the gap voltage and fit well to the universal scaling law (IcRn is proportional to the square root of Jc) found for GBJs fabricated from the hole doped HTS. This suggests that the symmetry of the order parameter, which most likely is different for the electron and the hole doped HTS has little influence on the characteristic properties of symmetrical [001] tilt GBJs.Comment: 3 pages, 4 figures, to be published in Applied Physics Letter

Andreev Bound States in High Temperature Superconductors

Andreev bound states (ABS) at the surface of superconductors are expected for any pair potential showing a sign change in different k-directions with their spectral weight depending on the relative orientation of the surface and the pair potential. We report on the observation of ABS in HTS employing tunneling spectroscopy on bicrystal grain boundary Josephson junctions (GBJs). The tunneling spectra were studied as a function of temperature and applied magnetic field. The tunneling spectra of GBJ formed by YBCO, BSCCO, and LSCO show a pronounced zero bias conductance peak that can be interpreted in terms of Andreev bound states at zero energy that are expected at the surface of HTS having a d-wave symmetry of the order parameter. In contrast, for the most likely s-wave HTS NCCO no zero bias conductance peak was observed. Applying a magnetic field results in a shift of spectral weight from zero to finite energy. This shift is found to depend nonlinearly on the applied magnetic field. Further consequences of the Andreev bound states are discussed and experimental evidence for anomalous Meissner currents is presented.Comment: 17 pages, 10 figures, to appear in Eur. Phys. J.

Sub-unit cell layer-by-layer growth of Fe3O4, MgO, and Sr2RuO4 thin films

The use of oxide materials in oxide electronics requires their controlled epitaxial growth. Recently, it was shown that Reflection High Energy Electron Diffraction (RHEED) allows to monitor the growth of oxide thin films even at high oxygen pressure. Here, we report the sub-unit cell molecular or block layer growth of the oxide materials Sr2RuO4, MgO, and magnetite using Pulsed Laser Deposition (PLD) from stoichiometric targets. Whereas for perovskites such as SrTiO3 or doped LaMnO3 a single RHEED intensity oscillation is found to correspond to the growth of a single unit cell, in materials where the unit cell is composed of several molecular layers or blocks with identical stoichiometry, a sub-unit cell molecular or block layer growth is established resulting in several RHEED intensity oscillations during the growth of a single unit-cell