CuInSe₂ (CIS) Thin Film Solar Cells by Direct Coating and Selenization of Solution Precursors

CuInSe2 (CIS) absorber layer was formed by a direct nonvacuum coating and a subsequent selenization of precursor solutions of Cu(NO3)2 and InCl3 dissolved in methanol. The viscosity of precursor solutions was adjusted by adding ethyl-cellulose (EC) to be suitable for the doctor-blade coating. During the coating and drying process Cu2+ ions in the starting solution were reduced to Cu+, resulting in precursor films consisting of CuCl crystals and amorphous In compound embedded in EC matrix. Selenization of the precursor films with Se vapor at elevated temperature generated double-layered films with an upper layer of chalcopyrite CIS and a carbon residue bottom layer. Significant In loss was observed during the selenization, which was attributed to the evaporation of the In2Se binary phase, confirmed by investigating the change in the Cu/In ratio of the selenized film as a function of Se flux and substrate temperature. As a proof-of-concept, thin film solar cells were fabricated with the double-layered absorber film and the devices exhibited reproducible conversion efficiency as high as about 2%

Carbon-Impurity Affected Depth Elemental Distribution in Solution-Processed Inorganic Thin Films for Solar Cell Application

A common feature of the inorganic thin films including Cu­(In,Ga)­(S,Se)₂ fabricated by nonvacuum solution-based approaches is the doubled-layered structure, with a top dense inorganic film and a bottom carbon-containing residual layer. Although the latter has been considered to be the main efficiency limiting factor, (as a source of high series resistance), the exact influence of this layer is still not clear, and contradictory views are present. In this study, using a CISe as a model system, we report experimental evidence indicating that the carbon residual layer itself is electrically benign to the device performance. Conversely, carbon was found to play a significant role in determining the depth elemental distribution of final film, in which carbon selectively hinders the diffusion of Cu during selenization, resulting in significantly Cu-deficient top CISe layer while improving the film morphology. This carbon-affected compositional and morphological impact on the top CISe films is a determining factor for the device efficiency, which was supported by the finding that CISe solar cells processed from the precursor film containing intermediate amount of carbon demonstrated high efficiencies of up to 9.15% whereas the performances of the devices prepared from the precursor films with very high and very low carbon were notably poor

Facile Microwave-Assisted Synthesis of Multiphase CuInSe₂ Nanoparticles and Role of Secondary CuSe Phase on Photovoltaic Device Performance

Multiphase CuInSe₂ (CISe) nanoparticles including the secondary CuSe phase are synthesized by a polyol-based, microwave-assisted solvothermal method. It is demonstrated that the reaction chemistry involving formation of the CISe phase is adjusted depending on the heretofore unrecognized chemical nature of polyol solvent, allowing for formation of secondary CuSe phase-incorporated multiphase CISe nanoparticles. The critical role of CuSe phase in generating the pore-free, dense CISe absorber layer for a high-performance thin-film photovoltaic device is investigated through the comparative study on CISe absorber layers derived from both multiphase and single-phase CISe nanoparticles